• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.85-92
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• 1996

The external electricla characteristics of helicon wave plasmas were measured over a wide range of RF power and magnetic filed. External parameters. such as antenna voltage , current, phase shift, and interanl parameter, electron density were measured at 7MHz, 1mTorr Ar discharge . The equivalent discharge resistance and reactance, and the power transfer efficiency were calculated through these measurements. There are a helicon mode which produces high density plasma by helicon wave and a lowmode which produces low density plasma by capaictive electric field. In case of the helicon mode, the anternna voltage and current were lower than those of the low-mode. The phase difference between voltage and current decreased suddenly at the transition point from the low-mode to the helicon mode. Equivalent resistance and power efficiency increased and reactance decreased suddenly at the transition point. These results mean that the power transperred to plasma and the nutual coupling between the antenna and plasma increase as the mode changes from the low-mode to the helicon mode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.149-149
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• 2012

We introduce Helicon discharge plasma source and Laser Thomson scattering system recently finished an installation in KRISS. Laser Thomson scattering method is promising for diagnostics in Helicon plasma because a measurement by electrical probe typically used has significant errors due to the gyromotion of electrons induced by high magnetic field. However, we found that LTS is affected by magnetic field so that we applied the normalization method for processing data and the results show a clear Maxwellian distribution at various conditions of magnetic field and RF power at low energy part without distortion.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.12-17
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• 2000

Helicon waves were excited by a Nagoya type III antenna in magnetized plasma, and hydrogen and methane are fed through a Mass Flow Controller(MFC). We made a diagnosis of properties of helicon plasma by H$_2$gaseous discharge, and fabricated the diamond thin film. The maximum measured electron density was 1${\times}$10$\^$10/ cm$\^$-3/. Diamond films have been growo on (100) silicon substrate using the helicon plasma chemical vapor deposition. Diamond films were deposited at a pressure of 0.1 Torr, deposition time of 40~80 h, a substrate temperature of 700$^{\circ}C$ and methane concentrations of 0.5~2.5%. The growth characteristics were investigated by means of X-ray Photoelectron (XPS) and X-ray Diffraction(XRD), XRD and XPS analysis revealed that SiC was formed, and finally diamond particles were definitely deposited on it. With increasing deposition time, the thickness and crystallization of the daimond thin film increased, For this system the optimum condition of methane concentration was estimated to near to 1.5%.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.579-579
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• 2013

We study on Argon metastable and 4p state neutral atom density in magnetized ICP Helicon plasmas by Laser Induced Fluorescence and plasma emission. The results show that metastable density is too low at the center of chamber due to significant neutral depletion. Otherwise, 4p state is high at the center of chamber because electron density is very high. Power and pressure dependence of metastable and 4p state neutral atom have been spatially measured in the radial direction of cylindrical chamber.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.