• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.765-767
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• 1991

• Journal of the Korean Chemical Society
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• v.30 no.6
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• pp.556-558
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• 1986

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3838-3840
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• 2012

• Bulletin of the Korean Chemical Society
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• v.28 no.1
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• pp.115-117
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• 2007

• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1784-1786
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• 2008

• Journal of the Korean Chemical Society
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• v.41 no.10
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• pp.552-556
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• 1997

• Journal of the Korean Chemical Society
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• v.13 no.2
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• pp.109-114
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• 1969

Halogen exchange reactions of benzyl halides have been studied in absolute acetone. Rate constants were calculated using an integrated rate expression derived for the reaction involving ion-pair association. The order of nucleophilicity of halide ions in acetone was found to be a reverse of the order in 90% aqueous enthanol solvent. This was interpreted by means of HSAB principle and solvation of halide ions. Net increase in rate of reaction in acetone compared with the rate in protic solvent resulted from large increase in ${\Delta}S^\neq$ rather than decrease in ${\Delta}H^\neq$. The solvation of the transition state also contribute to the net increase in rate.

• Journal of the Korean Chemical Society
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• v.41 no.9
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• pp.449-459
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• 1997

The bonded state polarizabilities of ions in the alkali halides are estimated by using the Seitz and Ruffa (SR) energy level analysis relation. The effective number of electrons $(N_{eff})$ in the Slater-Kirkwood formula are used for all members of an isoelectronic sequence. The effective dispersion coefficients $(C_6^{eff})$ are calculated by the use of the empirical formula (J. Chem. Phys. 1991, 95, 1852) estimating $(N_{eff})$ values to reproduce the experimental $(C_6^{eff})$ for atom-atom (or molecule) interactions. In the framework of the T-Rittner model the model potential is constructed and used to calculate the values of dissociation energy and dipole moment. The results obtained in the present study are in good agreement with the experiment one.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.325-325
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• 2006

Cationic polymerization of isobutyl vinyl ether using various metal halides was examined in toluene in the presence of an added base at $0^{\circ}C$. In conjunction with an appropriate weak base such as ethyl acetate or 1,4-dioxane, all metal halides but $FeBr_{3}\;and\;GaCl_{3}$ led to living cationic polymerization. The polymerization rates varied as follows: $FeBr_{3},\;GaCl_{3}\;>\;FeCl_{3}\;>\;SnCl_{4}\;>\;InCl_{3}\;>\;ZnCl_{2}\;>>\;AlCl_{3},\;HfCl_{4},\;ZrCl_{4}\;>\;EtAlCl_{2},\;BiCl_{3},\;TiCl4\;>>\;SiCl_{4}\;>\;GeCl_{4}$. This order partially corresponds to that of the equilibrium constant in the formation of a carbocation from a chloroalkane in the presence of a carbonyl compound. With extremely active Lewis acids, such as $FeBr_{3}\;and\;GaCl_{3}$, the use of a stronger base, THF, was required to achieve living polymerization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.846-851
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• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.