• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.5
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• pp.2443-2448
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• 2013

In this paper, a design of size-reduced microwave oscillator using common defected ground structure (common DGS) is described. At first, an oscillator is designed using the normal stub resonator, and the conventional DGS patterns are inserted for the first trial of size-reduction. Finally, the DGS resonator section is folded by half size in order to adopt the common DGS, and this produces the proposed size-reduced oscillator. Common DGS pattern is inserted for a better size-reduction than when conventional DGSs are used. The folded transmission line is connected using the 3-dimensional signal via-holes. For an example of design, a 2.1GHz oscillator is designed and fabricated using a small signal transistor and common DGS, which shows the size-reduction of 11 mm. The measurement shows 6.7dBm of output power and -133dBc/Hz@1MHz of phase noise. The measured performances are so similar to those of the oscillators before size-reduction and prove the proposed size-reduction method of oscillators using common DGS.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.

• Development and Reproduction
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• v.3 no.1
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• pp.75-85
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• 1999

To investigate the origin and action mechanism of cytoplasmic factors as regulators of morphogenesis, the embryonic development, RNA synthesis and protein phosphorylation were examined in reconstituted embryos. A half of 1-cell mouse embryo with both pronuclei was electrofused with the enucleated cytoplasm of 1- or 2-cell embryos which were cultured for 24 hrs from post 20 hrs hCG in CZB with or without cycloheximide (CHX, an inhibitor of protein synthesis; P+P-CHX group), genistein (Gen, an inhibitor of tyrosine protein kinase; P+2-Gen group) and 6-dimethylaminopurine (6-DMAP, an inhibitor of serine-threonine protein kinase; P＋2-DMAP group), and co-cultured with Vero cells for 5 days. And their development, cell numbers at compaction, [5, 6-$^3$H]-uridine incorporation into RNA and the pattern of protein phosphorylation after labeling of [$^{32}$ P] orthophosphate were compared with that of the reconstituted embryos such as P+2 or P+P (control group). Embryonic development and the time of RNA synthesis in P+P-CHX were similar to those in P+P. But the time and the cell stages of embryonic compaction in P+P-CHX were similar to those in P+2. The compaction was initiated at 4-cell in P+2 and P+2-Gen, but at 8-cell in P+P and P+2-DMAP. On a two-dimensional gel electrophoresis, phosphorylation of 80KD and 110KD proteins were inhibited after 3 hrs of reconstruction in the embryo of P+2-DMAP when compared with that of P+2 and P+2-Gen. These results suggest that protein synthesis between 1- and 2-cell stage affects the timing of embryonic genome activation, and that cytoplasmic factors derived from oocyte or their modification regulates the time schedule of embryonic compaction in mouse. Also, serine-threonine protein kinase has an important role on the regulation of compaction.