• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.51-67
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• 1999

The growth of crystals with high melting points tfus$\geq$1$600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with tfus》1$600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, any oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure pO2. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and ways to forecast their behavior under growth conditions.r growth conditions.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.8 no.2
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• pp.27-34
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• 1999

The growth-strain method was used for shape optimization, which carries out the optimization by distributing uniformly the distributed parameter such as von Mises stress and shear strain energy density. Shape optimization is carried out by iteration of stress analysis and growth strain analysis. In this study, the effect of growth ratio in the method was investigated and then the range of the adequate value of the growth ratio was determined. Also the growth-strain method was improved by applying the linear PID control theory in order to control volume required by a designer. Finally, an automatic shape optimization system was built up by the improved growth-strain method with a commercial software using finite element method. The effectiveness and practicability of the developed shape optimization system was verified by some examples.

• Journal of Mechanical Science and Technology
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• v.16 no.10
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• pp.1246-1252
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• 2002

Ultrafine grained (UFG) low carbon (0.15 wt.% C) steel produced by equal channel angula. pressing (ECAP) was tested for investigating the effect of load ratio on the fatigue crack growth rate. Fatigue crack growth resistance and threshold of UFG steel were lower than that of asreceived coarse grained steel. It was attributed to the less tortuous crack path. The UFG steel exhibited slightly higher crack growth rates and a lower △Kth with an increase of R ratio. The R ratio effect on crack growth rates and △Kth was basically indistinguishable at lower load ratio (R >0.3), compared to other alloys, which indicates that contribution of the crack closure vanishes. The crack growth rate curve for UFG steel exhibited a longer linear extension to the lower growth rate regime than that for the coarse grained as-received steel.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.360-364
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• 1999

The growth of crystals with high melting point$t_{fus}$$\geq$$1600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with$t_{fus}$$1600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, many oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure${po}_{2}$. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and wasy to forecast theri behavior under growth conditions.

• Journal of Korean Society of Steel Construction
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• v.14 no.6
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• pp.773-782
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• 2002

In this study, a series of fatigue tests are performed in order to estimate quantitatively the characteristics of fatigue crack growth rate according to the base metal, heat affected zone(HAZ) and weld metal, and the welding method and grade of strength of object steels, and the influence on fatigue crack growth rate according to the direction of welded line for high strength steels of SM570, POSTEN60, and POSTEN80 steels. From the fatigue test results, the retardations of fatigue crack growth rate are remarkable in case that the direction of notch is parallel to welded line than in case that the direction of notch is perpendicular to welded line because of compresive residual stress in weld metal & HAZ. And the characteristics of fatigue crack growth rate according to welding method are that the dispersion of fatigue crack growth rate in case of FCAW method is smaller than that of SAW method. Also, it knows that the fatigue crack growth rate converges in high stress intensity factor range. Meanwhile, fatigue safety is guaranteed sufficiently in the object steels because the fatigue crack growth rate in the range of fatigue crack propagation has a similar tendency to the test results & existing results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.333-339
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• 1983

Semiconducting glaxe of iron system for the recent use as high Voltage porcelain insulators often showed the tendancy of unstable thermal properties. Thus the development of frit including magnetite was studied to cover the defect. In the experimental process melted and quenched frits were ground pelletized and heat-treated at various temperatures in the range of 800-1 $300^{\circ}C$ for various soaking time within 4 hours and then crystallized specimens were obtained. The speciment were studied with optical and electron microscope DTA x-ray diffractometer and electrometer The results obtained were as follows : 1) The optimum condition for the crystal growth of magnetite in the frite was the heat-treatment of $1300^{\circ}C$ for 3hrs and in this case the range of crystal size was $10-11\mu\textrm{m}$ 2) The activation energy for the crystal growth of magnetite was 21.1 kcal/mole. 3) The heat-treament at $1, 250^{\circ}C$ and $1, 300^{\circ}C$ resulted in the good thermal stability and the range of surface resistivity was $3.5{\times}10^4-4.0{\times}10^7$, /TEX> $\Omega$/$cm^2$ which was adguate to semiconducting frit. 4) The conduction mechanism seems to be due to the electron mobility rather than ion mobility and the activa-tion energy for the conduction was 0.07-0.15eV/mole for the heat-treated specimes in the range of 1, 250-1, 300C

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.2
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• pp.475-485
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• 1995

In this study, statistical analysis of fatigue data which had obtained from respective 24 fatigue crack, was examined for SiC whisker reinforced aluminium 6061 composite alloy (SiC$_{w}$/A16061) and aluminium 6061 alloy. SiC volume fraction in composite alloy is 25%. The analysis results stress intensity factor range and 0.1 mm fatigue crack initiation life for SiC$_{w}$/A16061 composite & A16061 matrix are the log-normal distribution. And regression analysis by linear model, exponential model and multiplicative model were performed to find out the relationship between fatigue crack growth rate(da/dN) and stress intensity for find out the relationship between fatigue crack growth rate(da/dN) and stress intensity factor range(.DELTA.K) in the SiC$_{w}$/A16061 composite and examine the applicability of Paris' equation to SiC$_{w}$A16061 composite. Also computer simulation was performed for fatigue life prediction of SiC$_{w}$/A16061 composite using the statistical results of this study.udy.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.6
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• pp.1552-1560
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• 1990

A general form of the mathematical function in the fatigue crack growth rate law for CT specimens was determined by means of the dimensional analysis at elevated temperatures. The experimental results can be rigorously described by the combination of rate theory and fracture mechanics. The rate theory approach extends the scope of fracture mechanics through the consideration of the temperature. The fatigue crack growth rates are represented by the Arrhenius type equation. This equation explains fairly well the experimental data for Cr-Mo-V rotor steel and A517-F steel in the comparatively wide temperature regions as affected with the temperature and the stress intensity factor range interaction.