• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.51-67
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• 1999

The growth of crystals with high melting points tfus$\geq$1$600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with tfus》1$600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, any oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure pO2. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and ways to forecast their behavior under growth conditions.r growth conditions.

• 한국생산제조학회지
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• 제8권2호
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• pp.27-34
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• 1999

The growth-strain method was used for shape optimization, which carries out the optimization by distributing uniformly the distributed parameter such as von Mises stress and shear strain energy density. Shape optimization is carried out by iteration of stress analysis and growth strain analysis. In this study, the effect of growth ratio in the method was investigated and then the range of the adequate value of the growth ratio was determined. Also the growth-strain method was improved by applying the linear PID control theory in order to control volume required by a designer. Finally, an automatic shape optimization system was built up by the improved growth-strain method with a commercial software using finite element method. The effectiveness and practicability of the developed shape optimization system was verified by some examples.

• Journal of Mechanical Science and Technology
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• 제16권10호
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• pp.1246-1252
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• 2002

Ultrafine grained (UFG) low carbon (0.15 wt.% C) steel produced by equal channel angula. pressing (ECAP) was tested for investigating the effect of load ratio on the fatigue crack growth rate. Fatigue crack growth resistance and threshold of UFG steel were lower than that of asreceived coarse grained steel. It was attributed to the less tortuous crack path. The UFG steel exhibited slightly higher crack growth rates and a lower △Kth with an increase of R ratio. The R ratio effect on crack growth rates and △Kth was basically indistinguishable at lower load ratio (R >0.3), compared to other alloys, which indicates that contribution of the crack closure vanishes. The crack growth rate curve for UFG steel exhibited a longer linear extension to the lower growth rate regime than that for the coarse grained as-received steel.

• 한국결정성장학회지
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• 제9권4호
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• pp.360-364
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• 1999

The growth of crystals with high melting point$t_{fus}$$\geq$$1600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with$t_{fus}$$1600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, many oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure${po}_{2}$. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and wasy to forecast theri behavior under growth conditions.

• 한국강구조학회 논문집
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• 제14권6호
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• pp.773-782
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• 2002

본 연구에서는 향후 사용빈도가 증가할 것으로 예상되는 SM570, POSTEN60 및 POSTEN80 강재를 대상으로 용접선 방향이 피로균열성장속도에 미치는 영향, 용접방법 및 강도등급에 따른 피로균열성장특성, 그리고 각 재질별(모재부, 열영향부, 용접금속부) 피로균열 성장특성을 정량적으로 평가하기 위해서 CT시험편을 제작해서 일련의 피로시험을 실시하였다. 피로시험결과 노치가 용접선과 평행한 시험체의 경우 노치선단에 존재하는 압축잔류응력의 영향으로 노치가 용접선과 직각인 시험체의 경우보다 피로균열성장속도의 지연현상이 현저해지는 것을 알 수 있었다. 그리고 용접 방법에 따른 피로균열성장특성은 강재의 강도등급에 관계없이 FCAW가 SAW에 비해서 피로균열성장속도의 분산이 적게 나타나고 있으며, 또한 높은 응력확대계수범위 영역에서 피로균열성장속도의 수렴현상이 나타나는 것을 알 수 있었다. 한편 본 피로시험결과와 기존의 연구결과를 비교하면 피로균열성장영역에서의 피로균열성장속도는 유사한 경향을 나타내고 있으므로 본 연구에서 대상으로 한 강재는 피로안전성을 충분히 확보하고 있음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• 한국세라믹학회지
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• 제20권4호
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• pp.333-339
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• 1983

Semiconducting glaxe of iron system for the recent use as high Voltage porcelain insulators often showed the tendancy of unstable thermal properties. Thus the development of frit including magnetite was studied to cover the defect. In the experimental process melted and quenched frits were ground pelletized and heat-treated at various temperatures in the range of 800-1 $300^{\circ}C$ for various soaking time within 4 hours and then crystallized specimens were obtained. The speciment were studied with optical and electron microscope DTA x-ray diffractometer and electrometer The results obtained were as follows : 1) The optimum condition for the crystal growth of magnetite in the frite was the heat-treatment of $1300^{\circ}C$ for 3hrs and in this case the range of crystal size was $10-11\mu\textrm{m}$ 2) The activation energy for the crystal growth of magnetite was 21.1 kcal/mole. 3) The heat-treament at $1, 250^{\circ}C$ and $1, 300^{\circ}C$ resulted in the good thermal stability and the range of surface resistivity was $3.5{\times}10^4-4.0{\times}10^7$, /TEX> $\Omega$/$cm^2$ which was adguate to semiconducting frit. 4) The conduction mechanism seems to be due to the electron mobility rather than ion mobility and the activa-tion energy for the conduction was 0.07-0.15eV/mole for the heat-treated specimes in the range of 1, 250-1, 300C

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• 대한기계학회논문집
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• 제19권2호
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• pp.475-485
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• 1995

In this study, statistical analysis of fatigue data which had obtained from respective 24 fatigue crack, was examined for SiC whisker reinforced aluminium 6061 composite alloy (SiC$_{w}$/A16061) and aluminium 6061 alloy. SiC volume fraction in composite alloy is 25%. The analysis results stress intensity factor range and 0.1 mm fatigue crack initiation life for SiC$_{w}$/A16061 composite & A16061 matrix are the log-normal distribution. And regression analysis by linear model, exponential model and multiplicative model were performed to find out the relationship between fatigue crack growth rate(da/dN) and stress intensity for find out the relationship between fatigue crack growth rate(da/dN) and stress intensity factor range(.DELTA.K) in the SiC$_{w}$/A16061 composite and examine the applicability of Paris' equation to SiC$_{w}$A16061 composite. Also computer simulation was performed for fatigue life prediction of SiC$_{w}$/A16061 composite using the statistical results of this study.udy.

• 대한기계학회논문집
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• 제14권6호
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• pp.1552-1560
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• 1990

본 연구에서는 로터강(Cr-Mo-V 강)과 저탄소합금강(A517-F강)의 CT시험편을 대상으로 한 고온피로 시험결과를 토대로 차원해석법을 도입시켜 고온하의 균열성장률 을 유도한 다음 온도(T)와 응력확대계수범위(.DELTA.K,T)인 아레니우스 형태의 식을 유도하 였다.그리고 유도된 균열 성장 법칙을 파리스식과 비교 검토하여 본 연구에서 유도 된 이 균열성장법칙의 타당성을 검토하고자 한다.