• 제목/요약/키워드: graphene nanoribbons

검색결과 25건 처리시간 0.033초

그래핀 나노리본 보강 시멘트 복합체의 기계적 전기적 특성 분석 (Investigation of the mechanical and electrical properties of graphene nanoribbons-reinforced cementitious composites)

  • 리패기;유준성;배성철
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2022년도 봄 학술논문 발표대회
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    • pp.184-185
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    • 2022
  • This study researched the effect of graphene nanoribbons (0.05 wt%) on cement-based materials' mechanical and electrical properties. The results were compared with the ordinary Portland cement (OPC) paste and OPC paste with the same content of carbon nanotubes. The experiment results showed that after curing for 28 days, the compressive and splitting tensile strength of the sample with graphene nanoribbons were increased by 17.8% and 6.6% compared to OPC paste, and its reinforced effect for cement-based materials was superior to carbon nanotubes. Besides, due to the excellent electrical properties of graphene nanoribbons, the sample reinforced by graphene nanoribbons had a lower electrical resistivity (135.5 Ω·m) than OPC paste (418.5 Ω·m) and paste with carbon nanotubes (175.5 Ω·m). This proved the promising application of graphene nanoribbons on cement-based materials.

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Raman Spectroscopy Studies of Graphene Nanoribbons and Chemical Doping in Graphene

  • Ryu, Sun-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.15-15
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    • 2011
  • Atom-thick graphene membrane and nano-sized graphene objects (NGOs) hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. To realize this potential, chemical properties of graphene need to be understood and diagnostic methods for various NGOs are also required. To meet these needs, chemical properties of graphene and optical diagnostics of graphene nanoribbons (GNRs) have been explored by Raman spectroscopy, AFM and STM scanning probes. The first part of the talk will illustrate the role of underlying silicon dioxide substrates and ambient gases in the ubiquitous hole doping of graphene. An STM study reveals that thermal annealing generates out-of-plane deformation of nanometer-scale wavelength and distortion in $sp^2$ bonding on an atomic scale. Graphene deformed by annealing is found to be chemically active enough to bind molecular oxygen, which leads to a strong hole-doping. The talk will also introduce Raman spectroscopy studies of GNRs which are known to have nonzero electronic bandgap due to confinement effect. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and strong disorder-related D band originating from scattering at ribbon edges. Detailed analysis of the G, D, and 2D bands of GNRs proves that Raman spectroscopy is still a reliable tool in characterizing GNRs despite their nanometer width.

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Development of magnetism in armchair graphene nanoribbons with edge functionalizations: A first-principles study

  • Shin, Dongjae;Kim, Yong-Hoon
    • EDISON SW 활용 경진대회 논문집
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    • 제6회(2017년)
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    • pp.376-382
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    • 2017
  • Graphene nanoribbons with zigzag-shaped edge (zGNRs) are predicted to be magnetic insulator at the ground state, attracting significant interest in view of spintronic applications [1]. On the other hand, although they are energetically and thermodynamically more favored than zGNRs [2], graphene nanoribbons with armchair-shaped edge (aGNRs) have been less spotlighted than zGNRs due to the absence of magnetism. Herein, based on the combined density functional theory (DFT) and matrix Green's function (MGF) approach, we consider aGNRs functionalized with various molecular groups, and show that the spin polarizations develop for some of the considered aGNR edge functionalization cases. The origin of the induced magnetism will be discussed within the Lieb's theorem [3]. This work will provide a novel guidance for the development of graphene-based spintronic devices.

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Charge Transport Properties of Boron/Nitrogen Binary Doped Graphene Nanoribbons: An ab Initio Study

  • Kim, Seong Sik;Kim, Han Seul;Kim, Hyo Seok;Kim, Yong Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.180.2-180.2
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    • 2014
  • Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

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그래핀 나노리본 혼입 시멘트 경화체의 고온 노출에 의한 기계강도 변화에 관한 연구 (A study on the mechanical strength change of graphene nanoribbons enhanced cement paste at a high-temperature)

  • 리패기;유준성;배성철
    • 한국건축시공학회:학술대회논문집
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    • 한국건축시공학회 2023년도 가을학술발표대회논문집
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    • pp.125-126
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    • 2023
  • This work explores the effectiveness of graphene nanoribbons (GNRs) in modifying the fire resistance of cement paste. The GNRs are added to the ordinary Portland cement at 0.10 wt% of the cement, and the sample is heated to target temperatures after curing for 28 days. Subsequently, the variations of compressive strength and pore structure are inquired by compared to the control sample without nano reinforcing and the sample with the same amount of carbon nanotubes (CNTs).

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Binary Doping of N-B and N-P into Graphene and Graphene Nanoribbons: Structural, Electronic, and Transport properties

  • Kim, Hyo Seok;Kim, Han Seul;Kim, Seong Sik;Kim, Yong Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.647-647
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    • 2013
  • We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the structures, energetics and charge transport characteristics of nitrogen-doped graphene and graphene nanoribbons (GNRs) with additional doping of phosphorus or boron atoms. Considering graphitic, pyridinic, and porphrin-like N doping sites and increasing N-doping concentration, we analyze the structures of N-P and N-B doped graphene and particularly focus on how they affect the charge transport along the lateral direction. For the GNRs, we also consider the differences between defects formed at the edge and bulk regions. Implications of our findings in the context of electronic and energy device applications will be also discussed.

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Large-Scale Assembly of Aligned Graphene Nanoribbons with Sub 30-nm Width

  • Kim, Taekyeong
    • 대한화학회지
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    • 제58권6호
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    • pp.524-527
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    • 2014
  • We report a simple yet efficient method to assemble large-scale aligned graphene nanoribbons (GNRs) with a width as small as 30 nm. The $V_2O_5$ nanowires (NWs) were aligned on a graphene surface via spraying a solution of the $V_2O_5$ NWs, and the graphene was selectively etched by the reactive ion etching method using the $V_2O_5$ NWs as a shadow mask. This process allowed us to prepare large scale patterns of the aligned GNRs on a $SiO_2$ substrate. The orientation of the aligned and randomly oriented GNRs was compared by the atomic force microscope (AFM) images. We achieved the highly aligned GNRs along the flow direction of the $V_2O_5$ NWs solution. Furthermore, we successfully fabricated a field effect-transistor with the aligned GNRs and measured its electrical properties. Since our method enable to prepare the aligned GNRs over a large area, it should open up new way for the various applications.

Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures

  • Wong, K.L.;Chuan, M.W.;Chong, W.K.;Alias, N.E.;Hamzah, A.;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • 제7권3호
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    • pp.209-221
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    • 2019
  • Graphene, with impressive electronic properties, have high potential in the microelectronic field. However, graphene itself is a zero bandgap material which is not suitable for digital logic gates and its application. Thus, much focus is on graphene nanoribbons (GNRs) that are narrow strips of graphene. During GNRs fabrication process, the occurrence of defects that ultimately change electronic properties of graphene is difficult to avoid. The modelling of GNRs with defects is crucial to study the non-idealities effects. In this work, nearest-neighbor tight-binding (TB) model for GNRs is presented with three main simplifying assumptions. They are utilization of basis function, Hamiltonian operator discretization and plane wave approximation. Two major edges of GNRs, armchair-edged GNRs (AGNRs) and zigzag-edged GNRs (ZGNRs) are explored. With single vacancy (SV) defects, the components within the Hamiltonian operator are transformed due to the disappearance of tight-binding energies around the missing carbon atoms in GNRs. The size of the lattices namely width and length are varied and studied. Non-equilibrium Green's function (NEGF) formalism is employed to obtain the electronics structure namely band structure and density of states (DOS) and all simulation is implemented in MATLAB. The band structure and DOS plot are then compared between pristine and defected GNRs under varying length and width of GNRs. It is revealed that there are clear distinctions between band structure, numerical DOS and Green's function DOS of pristine and defective GNRs.

Transport properties of boron/nitrogen/phosphorus binary doped graphene nanoribbons: An ab initio study

  • Kim, Seong Sik;Kim, Han Seul
    • EDISON SW 활용 경진대회 논문집
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    • 제2회(2013년)
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    • pp.273-277
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    • 2013
  • We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

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