• Korean Journal of Weed Science
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• v.7 no.1
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• pp.90-97
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• 1987

An attempt was done at the Yeongnam Crop Experiment Station in 1986-'87 to obtain herbicide tolerant variant through cell culture. Immatured rice grain was more rapidly and efficiently formed callus in dehulled rice culture method for both rice cultivar types, Tongil type (Indica/Japonica) and Japonica-type. However, Japonica-type cultivar was generally superior than Tongil-type Cultivar in callus formation. Expression rate of herbicide tolerant variant varied depending upon rice cultivar, plant species and herbicide properties. In case of Nagdongbyeo (Japonica) at the first subculture, 46.3% of total callus pieces appeared as herbicide tolerant variant in herbicide media of CGA142464 and followed by NC-311 (11.6%), Butachlor (7.5%), 2.4-D (2.1%), Quinclorac (0.89%), and Propanil (0.25%), in order. This degree of appearance of herbicide tolerant variants rapidly increased as passage of subculture was advanced. Herbicide tolerant callus hardly regenerated as normal plant even though large variations exhibited among culture media.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.5C
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• pp.664-672
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• 2004

Widespread popularity of wireless data communication devices, coupled with the availability of higher bandwidths, has led to an increased user demand for content-rich media such as images and videos. Since such content often tends to be private, sensitive, or paid for, there exists a requirement for securing such communication. However, solutions that rely only on traditional compute-intensive security mechanisms are unsuitable for resource-constrained wireless and embedded devices. In this paper, we propose a selective partial image encryption scheme for image data hiding , which enables highly efficient secure communication of image data to and from resource constrained wireless devices. The encryption scheme is invoked during the image compression process, with the encryption being performed between the quantizer and the entropy coder stages. Three data selection schemes are proposed： subband selection, data bit selection and random selection. We show that these schemes make secure communication of images feasible for constrained embed-ded devices. In addition we demonstrate how these schemes can be dynamically configured to trade-off the amount of ded devices. In addition we demonstrate how these schemes can be dynamically configured to trade-off the amount of data hiding achieved with the computation requirements imposed on the wireless devices. Experiments conducted on over 500 test images reveal that, by using our techniques, the fraction of data to be encrypted with our scheme varies between 0.0244％ and 0.39％ of the original image size. The peak signal to noise ratios (PSNR) of the encrypted image were observed to vary between about 9.5㏈ to 7.5㏈. In addition, visual test indicate that our schemes are capable of providing a high degree of data hiding with much lower computational costs.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.