• Korean Journal of Materials Research
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• v.11 no.6
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• pp.502-507
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• 2001

The effect of solidification rate on the microstructure of directionally solidified IN792+ Hf superalloy has been studied. Solidification sequence and precipitation behavior of the alloy have been analysed by microstructural observation. The script carbide transformed to faceted carbide with decreasing solidification rates. The incorporation of ${\gamma}$ phase into the faceted carbide was due to dendritic growth of carbides. Some elongated carbide bars formed along the grain boundaries at a solidification rate of 0.5$\mu\textrm{m}$/s. Two zones, ${\gamma}$' forming elements enriched zone and depleted zone, were found in the residual liquid area. Eutectic ${\gamma}$/${\gamma}$' nucleated in the f forming elements enriched zone. Formation of eutectic ${\gamma}$/${\gamma}$' increased the ratio of (Ti+Hf+Ta+W)/Al and induced η phase precipitation. The ratio of (Ti+Hf+Ta+W)/Al decreased at lower solidification rates due to sufficient back diffusion in the residual liquid area. Hence, the Precipitation of the η Phase efficiently suppressed at the lower solidification rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.37-43
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• 2013

Conductivity of LSGMC materials were affected by secondary phase segregation, composition and synthetic route. $La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.1}Co_{0.1}O_{3-{\delta}}$ (LSGMC) powders were prepared using the glycine nitrate process to produce high surface area and compositionally homogeneous powders. The powders were synthesized with different 0.5, 1, 1.5, 2, 2.5 of glycine/cation molar ratios. A single perovskite phase from the synthesized powders was characterized with X-ray diffraction patterns. The obtained sintered pellets showed the dense grain microstructure. In case of 1.5 molar ratio, its density was higher than the others. The electrical conductivity measured at $800^{\circ}C$ was observed to be 0.131 $Scm^{-1}$. In addition, the linear thermal expansion behavior was indicated between $25^{\circ}C$ and $800^{\circ}C$.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.166-176
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• 1994

Ni base superalloys are composed of solid sohltion hardening elements(Co, Cr. Mo. W and so on) and $\gamma '$ precipitation hardening elements(A1, Ti, Nb, Ta and so on). To Improve the mechanical properties and oxidation resistanre of superalloys, rare earth elements(%r, Hf, Y and so on) are added to the inner substrate, or are used as coating materials. Their pffects on the growth rate and adhes~on of oxide are changed according to the kinds of oxides such as $AI_2O_3$ and $Cr_2O_3$. The effect of yttrium on the oxidation rate, grain size of oxide, internal structure, and crack resistance was investigated for two kinds of Ni-base superalloys. One in AF'115 superalloy containing Hf and the other is MA6000 superalloy containing $Y_2O_3$. They werr owid~zed at high temperature after yttrium surface modification using ion coater. Yttrium coating on the AF115 and MA6000 superalloys results in a marked change in the growth of the inner oxide. For AF115 superalloy, the degree of gram boundary segregation of $Cr_2O_3$, and prefer en^ tial oxidation of Hf are decreased, and the shape of inner oxidation layer was changed from triangle to plate type. For MA6000 superalloy, $Cr_2O_3$ oxide scale was transformed as outer oxidation layer of CrZOI and inner oxidation layer of $Cr_2O_3$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.11
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Bulletin of the Korean Chemical Society
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• v.30 no.12
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• pp.3011-3015
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• 2009

Structural and thermo-analytical studies were carried out to understand the phase formation kinetics of the single phase $Bi_5Ti_3FeO_{15}$ (BTFO) nanocrystals in $Bi_2O_3-Fe_2O_3-TiO_2$, during the polymerized complex (PC) synthesis method. The crystallization of Aurivillius phase $Bi_5Ti_3FeO_{15}$ layered perovskite was found to be initiated and achieved under the temperature conditions in the range of ${\sim}$800 to 1050$^{\circ}C$. The activation energy for grain growth of $Bi_5Ti_3FeO_{15}$ nanocrystals (NCs) was very low in case of NCs formed by PC (2.61 kJ/mol) than that formed by the solid state reaction (SSR) method (10.9 kJ/mol). The energy involved in the phase transformation of Aurivillius phase $Bi_5Ti_3FeO_{15}$ from $Bi_2O_3-Fe_2O_3-TiO_2$ system was ${\sim}$ 69.8 kJ/mol. The formation kinetics study of $Bi_5Ti_3FeO_{15}$ synthesized by SSR and PC methods would not only render a large impact in the nanocrystalline material development but also in achieving highly efficient visible photocatalysts.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.104-114
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• 2001

To investigate the effects of the addition of Nb and Sn on the recrystallization of Zr- Sn-Nb alloys, both Vickers micro-hardness test and TEP measurement were carried out on cold-worked specimens annealed at various temperatures from $300^{\circ}C$ to 75$0^{\circ}C$. The microstructures of heat treated specimens were analyzed by optical microscope, SEM, and TEM. The study of microhardness and microstructures showed that both recrystallization process and grain growth were retarded as the activation energy was increased by the addition of Nb and Sn. Especially, the addition of Sn was more effective on retarding recrystallization. Precipitates were formed more easily when Nb was added because the solubility of Nb into Zr is lower than that of Sn. However, the recrystallization process was affected more by Sn than Nb because the strain field formed by substitutional Sn repressed the dislocation movement. TEP was increased due to the decrease of electron scattering as recovery and recrystallization were proceeded and saturated when the recrystallization completed. However, when precipitates formed, TEP was increased because the decrease of solute concentration near the precipitates caused the decrease of electron scattering.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.346-351
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• 2012

$Li_{1+x}Al_xTi_{2-x}(PO_4)_3$(LATP) is a promising solid electrolyte for all-solid-state Li ion batteries. In this study, LATP is prepared through a sol-gel method using relatively the inexpensive reagents $TiCl_4$. The thermal behavior, structural characteristics, fractured surface morphology, ion conductivity, and activation energy of the LATP sintered bodies are investigated by TG-DTA, X-ray diffraction, FE-SEM, and by an impedance method. A gelation powder was calcined at $500^{\circ}C$. A single crystalline phase of the $LiTi_2(PO_4)_3$(LTP) system was obtained at a calcination temperature above $650^{\circ}C$. The obtained powder was pelletized and sintered at $900^{\circ}C$ and $1000^{\circ}C$. The LTP sintered at $900{\sim}1000^{\circ}C$ for 6 h had a relatively low apparent density of 75~80%. The LATP(x = 0.3) pellet sintered at $900^{\circ}C$ for 6 h was denser than those sintered under other conditions and showed the highest ion conductivity of $4.50{\times}10^{-5}$ S/cm at room temperature. However, the ion conductivity of LATP (x = 0.3) sintered at $1000^{\circ}C$ decreased to $1.81{\times}10^{-5}$ S/cm, leading to Li volatilization and abnormal grain growth. For LATP sintered at $900^{\circ}C$ for 6 h, x = 0.3 shows the lowest activation energy of 0.42 eV in the temperature range of room temperature to $300^{\circ}C$.

• Korean Journal of Plant Tissue Culture
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• v.21 no.5
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• pp.253-275
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• 1994

Many flowering plants possess genetically controlled self -incompatibility (SI) system that prevents inbreeding and promotes outcrosses. SI is usually controlled by a single, multiallelic S-locus. In gametophytically controlled system, SI results when the S-allele of the pollen is matched by one of the two S-alleles in the style, while in the sporophytic system self-incompatible reaction occurs by the interaction between the pistil genotype and genotype of, not the pollen, but the pollen parent In the former system the self-incompatible phenotype of pollen is determined by the haploid genome of the pollen itself but in the latter the pollen phenotype is governed by the genotype of the pollen parent along with the occurrence of either to-dominant or dominant/recessive allelic interactions. In the sporophytic type the inhibition reaction occurs within minutes following pollen-stigma contact, the incompatible pollen grains usually failing to germinate, whereas in gametophytic system pollen tube inhibition takes place during growth in the transmitting tissue of the style. Recognition and rejection of self pollen are the result of interaction between the S-locus protein in the pistil and the pollen protein. In the gametophytic SI the S-associated glycoprotein which is similar to the fungal ribonuclease in structure and function are localized at the intercellular matrix in the transmitting tissue of the style, with the highest concentration in the collar of the stigma, while in the sporophytic SI deposit of abundant S-locus specific glycoprotein (SLSG).is detected in the cell wall of stigmatic papillae of the open flowers. In the gametophytic system S-gene is expressed mostly at the stigmatic collar the upper third of the style length and in the pollen after meiosis. On the other hand, in the sporophytic SI S-glycoprotein gene is expressed in the papillar cells of the stigma as well as in e sporophytic tape is cells of anther wall. Recognition and rejection of self pollen in the gametophytic type is the reaction between the ribonuclease in the transmitting tissue of the style and the protein in the cytoplasm of pollen tube, whereas in the sporophytic system the inhibition of selfed pollen is caused by the interaction between the Sycoprotein in the wall of stigmatic papillar cell and the tapetum-origin protein deposited on the outer wall of the pollen grain. The claim that the S-allele-associated proteins are involved in recognition and rejection of self pollen has been made merely based on indirect evidence. Recently it has been verified that inhibition of synthesis of S$_3$ protein in Petunia inflata plants of S$_2$S$_3$ genotype by the antisense S$_3$ gene resulted in failure of the transgenic plant to reject S$_3$ pollen and that expression of the transgenic encoding S$_3$ protein in the S$_1$S$_2$ genotype confers on the transgenic plant the ability to reject S$_3$ pollen. These finding Provide direct evidence that S-proteins control the s elf-incompatibility behavior of the pistil.

• Journal of Korean Classical Literature and Education
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• no.35
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• pp.221-251
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• 2017

This study attempts to examine the problem of properties mentioned in Shin Jae hyo's adapted version of Baktaryeong through the property related behavior of the characters, and discuss Shin Jae hyo's view of properties and his contemporary perception problems. As a result, in Baktaryeong, Nolbu takes the shape of a rich farmer in the existing text with grain centered accumulated properties, and of a wealthy man who is skilled in money management and growth as an economically well-informed person. In contrast, Heungbu is a poor peasant isolated from his own farm without enough property to minimally survive, representing the alienated poor who can not adapt to the currency economy led by the Nolbu people. This adaptation could have been a product of Shin Jae hyo's own view of property. Through the detailed description of Baktaryeong, it can be seen that he found it difficult to observe too much, but he thought that interest in property and money seemed basically to be affirmed in human life. In addition, in terms of issues of the poor, he found that the economic efforts of the lower classes and the care of the rich should be needed for the poor. However, he was forced to put the sense of crisis and the self defense consciousness as a wealthy family of middle class in the local society under the rapidly changing circumstances of the time into the text. That is, Baktaryeong included his own diagnosis of the present reality by drawing the issue of wealth and poverty in existing Heungboga(jeon), which is perhaps more appropriate for reality based on Shin Jae hyo's own view of properties.