• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.83-91
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• 1996

Monolithic AlN and AlN-W composites were fabricated by pressure-less sintering at 190$0^{\circ}C$ under nitrogen atmosphere and the influences of tungsten phase on the microstructure and mechanical properties were investi-gated. In the fabrication of sintered specimen no additive was used. And monolithic AlN showed substantial grain growth and low relative density. AlN-W composites were fully densified and grain growths of matrix were inhibited. The densification behavior of composites were inferred to be achieved through the liquid phase sintering process such as particle-rearrangement and solutino-reprecipitation. Also the oxid phases which is expected to form liquid phases duringsintering process were detected by XRD analysis. As the tungsten volume content increases fracture strength was decreased and fracture toughness was increased. It was suppo-sed that the strength decrease of composites with tungsten content was due to existence of interface phases. The subcritical crack growth behavior was observed from the stress-strain curve of composites. The effect of the secondary phase and interface phases on toughness in crease were studied through observation of crack propagation path and the influence of residual stress on crack propagation was investigated by X-ray residual stress measurement. In the result of residual stress measurement the compressive stress of matrix in composi-test was increased with tungsten volume content and the compressive stress distribution of matrix must have contributed to the inhibition of crack propagation.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.955-961
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• 1993

Sintering behavior and microstructure development in the system ZnO-Bi2O3-CoO-Zn7Sb2O12 with Zn7Sb2O12 content(0.1mol%~2mol%) were studied. The pyrochlore phase was formed by the reaction of the Zn7Sb2O12 with Bi2O3 phase during heating (below 90$0^{\circ}C$). The formation temperature of the liquid phase (Bi2O3) was dependent on the Zn7Sb2O12 contents (about 74$0^{\circ}C$ for Bi2O3/Zn7Sb2O12>1 by the eutectic melting in the ZnOBi2O3 system, and about 110$0^{\circ}C$ for Bi2O3/Zn7Sb2O12 1 by the decomposition of pyrochlore phase). Hence, sintering behavior and microstructure development were determined virtually by the Bi2O3/Zn7Sb2O12 ratio, which were promoted by liquid (Bi2O3) phase and retarded by the pyrochlore (or spinel) phase. The grain growth of ZnO during sintering was sluggish with increasing Zn7Sb2O12 contents.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.433-438
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• 1987

The current-voltage characteristics of the ZnO varisor with and without Sb2O3 which were fabricated with the various calcination and sintering temperature were discussed by comparing the results of SEM-microstructures and X-ray diffraction analysis. The samples were calcined at the temperature up to 800\ulcorner for 2 hours and they were sintered at 1200-1300\ulcorner for 1 hour. Then, we applied the power up to dc 200 volt to the samples and measured the output current up to 100mA. The samples without Sb2O3 had lower nonlinear resistances at the all calcination and sintering temperatures due to the large grains because of not forming Spinel phase. The other samples contained Sb2O3 could form Pyrochlore and Spinel phases at the all calcination temperatures by X-ray diffraction phase analysis. We found that the Spinel phases which were formed at the calcination process inhibit growth of ZnO grain and give rise to the change of nonlinear resistances by SEM-microstructures. And we found that the base of ZnO grain growth control is strongly dependent on the behavior of Sb2O3 in calcination process.

• Transactions of Materials Processing
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• v.7 no.3
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• pp.197-206
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• 1998

This paper presents the prediction of dynamic recrystallization behavior during hot forging of Inconel 718. Another experiment of pancake forging was also carried out to examine the recrystallization ration dynamically recrystallizaed grain size, and grain growth in the forging. In experiments cylindrical billets were forged by two operations with variations of forging temperature, reduction ration of deformation. and preheating process at each forging step. Also the finite element program, developed here for the prediction using the metallurgical models was used for the analysis of to Inconel 718 upsetting and the results were compared with experimental ones.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.193-200
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• 2000

Si$_3$N$_4$powder with 2 wt% $Al_2$O$_3$and 6 wt% $Y_2$O$_3$additives was sintered by the gas pressure sintering (GPS) technique. The unlubricated wear behavior depending on sintering conditions such as sintering temperature, pressure, and sintering time was investigated. When the sintering temperature and time increased, the larger elongated grains were formed and the microstructural heterogeneity increased. When sintering pressure increased, grain growth, however, was impeded. Also, the wear properties depended on microstructure and friction coefficient were related to grain size. Based on the experimental results, the wear properties were associated with initial friction coefficients as well as mechanical properties including fracture toughness and flexural strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.03a
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• pp.175-178
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• 1997

A modified Mukerjee's model considering the microstructural evolution was developed to study the superplastic bulge forming process of Ti-6Al-4V alloy. Through the microstructual observation after deformation, it was found that the grain growth rate of uniaxially tested specimens was different from that of biaxially deformed specimens. From this result, bulge forming experiments with and without back pressure were performed to examine the grain growth behavior and to compare the results of biaxial test with those of triaxial test. Good agreement between the prediction by a modified Mukerjee's model and the experimental measurements was obtained for bulge profile and thickness distribution.

• Transactions of Materials Processing
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• v.22 no.8
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• pp.450-455
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• 2013

In the current study, a new dynamic recrystallization model for predicting high temperature flow stress is developed based on a physical model and the mean field theory. In the model, the grain aggregate is assumed as a representative volume element to describe dynamic recrystallization. The flow stress and microstructure during dynamic recrystallization were calculated using three sub-models for work hardening, for nucleation and for growth. In the case of work hardening, a single parameter dislocation density model was used to calculate change of dislocation density and stress in the grains. For modeling nucleation, the nucleation criterion developed was based on the grain boundary bulge mechanism and a constant nucleation rate was assumed. Conventional rate theory was used for describing growth. The flow stress behavior of pure copper was investigated using the model and compared with experimental findings. Simulated results by cellular automata were used for validating the model.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.98-101
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• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.