• Progress in Superconductivity
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• v.5 no.1
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• pp.45-49
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• 2003

We have designed and fabricated the single-layer high $T_{c}$ SQUID magnetometer consisting of a directly coupled grain boundary junction SQUID with an inductance of 100 pH and 16 nested parallel pickup coils with the outermost dimension of 8.8 mm ${\times}$ 8.8 mm. The magnetometer was formed from a YBCO thin film deposited on an STO(100) bicrystal substrate with a misorientation angle of $30^{\circ}$. The SQUID magnetometer was further improved by optimizing the multi-loop pickup coil design for use in unshielded environments. Typical characteristics of the dc SQUID magnetometer had a modulation voltage of 40 $\mu\textrm{V}$ and a white noise of $30fT/Hz^{1}$2/. The SQUID magnetometer exhibited a 1/f noise level at 10 Hz reduced by a factor of about 3 compared with that of the conventional solid type pickup coil magnetometers and a very stable flux locked loop operation in magnetically disturbed environments.s.

• Progress in Superconductivity
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• v.1 no.1
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• pp.20-25
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• 1999

We constructed a high-$T_c$ scanning SQUID microscope (SSM) operating in the liquid nitrogen. We used a washer-type YBCO SQUID with inner and outer dimensions of $12{\mu}m$ and $36{\mu}m$, respectively, which was grown on the $SrTiO^3$ bicrystal substrate. The sample, rather than SQUID, was scanned using two stepping motors. We also developed readout electronics, stepping motor controller, and the software for system control and data display. We took images of various samples using our SSM and found that the spatial resolution is about $40{\mu}m$ and noise level is lower than $10^{-7}T/{\surd}Hz$ at 100 Hz and higher at lower frequencies. The noise level was much higher than that of a typical SQUID due to the other coupling from the electric parts. We present a simple argument on the inductive coupling between the sample and the SQUID which should be under-stood for the proper interpretation of the obtained images. By comparing the measured data with the simulation results the gap between the SQUID and the sample is estimated to be $40{\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.60-60
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• 2011

Giant magnetoresistance (GMR), tunneling magnetoresistance (TMR), and magnetic random-access memory (MRAM) are currently active research areas in spintronics. The high magnetoresistance and the high spin polarization (P) of electrons in the ferromagnetic electrodes of tunnel junction or intermediate layers are required. Magnetite, Fe3O4, is predicted to possess as half-metallic nature, P ~ 100% spin polarization, and has a high Curie temperature (TC~850 K). Experiments demonstrated that the P~($80{\pm}5$)%, ~($60{\pm}5$)%, and ~40-55% for epitaxial (111), (110) and (001)-oriented Fe3O4 thin films, respectively. Epitaxial Fe3O4 films may enable us to investigate the effects of half metals on the spin transport without grain-boundary scattering.In addition, it has been reported that the Verwey transition (TV, a first order metal-insulator transition) of 120 K in bulk Fe3O4 is strongly affected by many parameters such as stoichiometry and stress, etc. Here we report that the growth modes, magnetism and transport properties of Fe3O4 thin films were strongly dependent on the oxygen pressure during film growth. The average roughness decreases from 1.021 to 0.263 nm for the oxygen pressure increase from $2.3{\times}10-7$ to $8.2{\times}10^{-6}$ Torr, respectively. The 120 K Verwey transition in Fe3O4 was disappeared for the sample grown under high oxygen pressure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).