• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.8
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• pp.1464-1469
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• 2008

A CMOS Gm-C filter with variable cutoff frequency applicable for using in the direct conversion receiver is designed. The designed filter comprises the CMOS differential transconductors, and the gm of the transconductor is controlled by the bias voltage. This configuration can compensate variant of the cutoff frequency which could be generated by external noises, and also be used in multiband receiver. As a results of HSPICE simulation, the control range of the cutoff frequency is $1.5MHz{\sim}3.5MHz$ and the gain control range is $-2.8dB{\sim}2.6dB$. The layout of the designed 5th-order Elliptic low-pass filter is performed to fabricate a chip using $2.5V-0.25{\mu}m$ CMOS processing parameter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.7
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• pp.1303-1310
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• 2016

In this paper, electrocardiogram (ECG) analog front end with supply voltage of 0.5V has been designed and verified by measurements of fabricated chip. ECG is composed of instrument amplifier, 6th order gm-C low pass filter and variable gain amplifier. The instrument amplifier is designed to have gain of 34.8dB and the 6th order gm-C low pass filter is designed to obtain the cutoff frequency of 400Hz. The operational transconductance amplifier of the low pass filter utilizes body-driven differential input stage for low voltage operation. The variable gain amplifier is designed to have gain of 6.1~26.4dB. The electrocardiogram analog front end are fabricated in TSMC $0.18{\mu}m$ CMOS process with chip size of $858{\mu}m{\times}580{\mu}m$. Measurements of the fabricated chip is done not to saturate the gain of ECG by changing the external resistor and measured gain of 28.7dB and cutoff frequency of 0.5 - 630Hz are obtained using the supply voltage of 0.5V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.424-427
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• 2007

A fully differential transconductor using the series composite transistor is proposed. Simulation results show that THD is less than 1.2% for the differential input signal of up to $1.5V_{p-p}$ when the input signal frequency is 10MHz. i he proposed transconductor is used to design a third-order elliptic Gm-C lowpass filter with 138kHz cutoff frequency for ADSL Tx filter. The design procedure is based on signal flow graph(SFG) of a doubly-terminated LC ladder filter by means of fully differential transconductors and capacitors. The filter is fabricated and measured with a $0.35{\mu}m$ CMOS process.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.30-38
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• 1998

In this paper, a new CMOS current-mode integrator is proposed that can apply the basic building block of the low-voltage high frequency current-mode active filter. And tuning circuits that control the gain and unity gain frequency of them is designed. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined transconductance and MOSFET gate capacitance can be expanded by the proposed integrator. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time integrator with NMOS-gm. And also, cut-off frequency and gain of the active filter can be controlled with the designed tuning circuit. From the result, we can reduce errors on fabrication. And then, 3rd-order low-pass active filter is designed as an application circuits. These results are verified by the small signal analysis and the 0.8$\mu\textrm{m}$ parameter HSPICE simulation.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1996.10a
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• pp.1071-1074
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• 1996

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.714-717
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• 2011

무선 송수신의 보급이 급속도로 확대됨에 따라 모바일 사용자는 새로운 기기를 구입해야 하는 불편을 따른다. 이에 대안으로 같은 기기로 다양한 기준주파수 보다, 낮은 주파수를 수용할 수 있는 주파수대역의 튜닝이 가능한 DCR(Direct conversion receiver) 의 필요성이 대두 되고 있다. 이에 DCR에 들어가는 저역통과필터는 다양한 기준주파수를 만족하기 위한 대역폭, 이득을 튜닝 하는데 중요한 부분을 차지하게 된다. 본 논문에서는 3차 Elliptic Gm-C Low Pass filter를 자이레이터 방식을 통해 DCR내의 Low Pass filter를 구현 하였다. 공급전압은 3.3V이고 외부에서 인가되는 튜닝전압에 의해 차단 주파수가 변화됨을 알 수 있었다. 그 결과를 통해서 레이아웃 하였으며, 설계된 회로는 COMS $0.18{\mu}m$ 설계 파라미터를 활용하여 Cadence 사의 Specter로 시뮬레이션 하였으며, Virtuso2로 레이아웃 하였다.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.6
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• pp.51-57
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• 1997

Low-voltage, low-power gm-C filter utilizing newly dveloped operational transconductance amplifier (OTA) is described in this paper. The OTA has only two MOS transistors in saturation region between $V_{DD}$ and GND, and thus low voltage operation is possible. To improve the linearity, the OTA is made differential. Common mode feedback, essential in differential circuit, requires no additional implemented in $0.8\mu\textrm{m}$ CMOS process, and the center frequency can be controlled from 15MHz with 3.0V single power supply.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.348-351
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• 2001

In this paper, the Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback(CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using TSMC $0.35{\mu}m$ CMOS n-well parameters. The simulation results show 138kHz cutoff frequency and 11.05mW power dissipation with a 3.3V supply voltage.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.257-260
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• 2000

In this paper, a Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback (CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using 0.25${\mu}{\textrm}{m}$ CMOS n-well parameters. The simulation results show 105MHz cutoff frequency and 2.4㎽ power dissipation with a 2.5V supply voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.515-516
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• 2007

A novel design of contious-time filter for direct conversion receiver applications is proposed. The filter supports different modes including GSM, WCDMA. A 5th chebyshev filter is realized in a gm-C filter topology. The filter circuit is implemented in a standard CMOS $0.35{\mu}m$ processing parameter with a supply voltage of 2.5V. The HSPICE results show that the filter has 200KHz and 5MHz cutoff frequency, and each 3.4us and 85.44us gm value.