• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.338-341
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• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• 한국분말재료학회지
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• 제15권4호
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• pp.297-301
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• 2008

The Ni-based bulk metallic glass matrix composites were fabricated by spark plasma sintering of mixture of gas-atomized metallic glass powders and ductile brass powders. The successful consolidation of metallic glass matrix composite was achieved by strong bonding between metallic glass powders due to viscous flow deformation and lower stress of ductile brass powders in the supercooled liquid state during spark plasma sintering. The composite shows some macroscopic plasticity after yielding, which was obtained by introducing a ductile second brass phase in the Ni-based metallic glass matrix.

• International Journal of Precision Engineering and Manufacturing
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• 제1권2호
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• pp.61-66
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• 2000

In this paper, we discuss the machining characteristics of HDD glass. Glass is now being used globally as a data storage device, Such glasses are usually machined by lapping by this technique requires a long machining time, resulting in low productivity, For this reason, we examine the possibility of EILD grinding in HDD glass workpieces, A move to ELID grinding may result in substantial cost reduction. Our purpose is to investigate the grinding characteristics of HDD glass in ELID grinding. The bonding materials for fixing the abrasives of cast iron, cobalt and bronze are applied, and grinding conditions such as rotation speed and feeding are varied. Results show that with the use of ELID, mirror surfaces can be achieved with high efficiency.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권9호
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• pp.488-493
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• 2004

In this paper, we present the fabrication of copper electrode array and test of electrochemical discharge machining(ECDM) for glass machining. An array of 72 Cu electrodes is used to machine Borofloat33 glass. The height and diameter of a Cu electrode are 400 $\mu\textrm{m}$ and 100 $\mu\textrm{m}$ respectively. It is fabricated by ICP-RIE, Au-Au thermo-compression bonding, and copper electroplating. Borofloat33 glass is machined by the fabricated copper electrode array in 60 seconds at 55 V. The surface roughness of the machined glass is measured and the machined glass is anodically bonded with silicon.

• 대한소아치과학회지
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• 제28권2호
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• pp.228-237
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• 2001

본 연구의 목적은 와동 충전시 충전재와 치질 사이에 개재되는 상아질 결합제가, 수복물에서 유리되는 불소가 와동 벽으로 침투하는 과정에 어떠한 영향을 주는지를 조사함이었고, 부가적으로 레진 강화형-글라스 아이오노머 시멘트의 접착에도 상아질 결합제를 도포 하는것이 치질과의 결합력을 강화시킬 수 있는지에 대해 평가하고자 하였다. Fuji II $LC^{(R)}$와 Dyract $AP^{(R)}$를 선정하여 상아질 결합제의 도포 여부에 따른 불소 유리량 측정과 전단 결합 강도를 비교분석하였으며, 치질 내로의 불소 침투 양상은 교환 시기에 있는 제2유구치에 Fuji II $LC^{(R)}$와 Dyract $AP^{(R)}$를 충전하고 3주내에 발거하여 EPMA로 분석하였다. 상아질 결합제는 불소 유리량을 현저하게 감소시키는 것으로 나타났으며(p<0.05) Fuji II $LC^{(R)}$의 경우 상아질 결합제의 도포가 결합강도를 증가시키지 못하였다. EPMA 분석결과 상아질 결합제는 충전재로부터 유리되어 나오는 불소가 치질 내로 확산되는 것을 방해하는 것으로 확인되었다.

• 한국재료학회지
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• 제28권5호
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• pp.308-314
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• 2018

Among the fuel cell electrolyte candidates in the intermediate temperature range, glass materials show stable physical properties and are also expected to have higher ion conductivity than crystalline materials. In particular, phosphate glass has a high mobility of protons since such a structure maintains a hydrogen bond network that leads to high proton conductivity. Recently, defects like volatilization of phosphorus and destruction of the bonding structure have remarkably improved with introduction of cations, such as Zr4+ and Nb5+, into phosphate. In particular, niobium has proton conductivity on the surface because of higher surface acidity. It can also retain phosphorus content during heat treatment and improve chemical stability by bonding with phosphorus. In this study, we fabricate niobium phosphate glass thin films through sol-gel processing, and we report the chemical stability and electrical properties. The existence of the hydroxyl group in the phosphate is confirmed and found to be preserved at the intermediate temperature region of $150-450^{\circ}C$.

• 센서학회지
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• 제12권6호
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• pp.265-272
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• 2003

본 논문은 파이렉스 #7740 유리 박막을 이용한 MEMS용 MLCA (Multi Layer Ceramic Actuator)와 Si기판의 양극접합 특성에 관한 것이다. 최적의 RF 마그네트론 스피터링 조건 (Ar 100%, input power $1\;W/cm^2$)하에서 MLCA기판위에 파이렉스 #7740 유리의 특성을 갖는 박막을 증착하였다. $450^{\circ}C$에서 1시간 열처리한 다음, -760 mmHg, 600V 그리고 $400^{\circ}C$에서 1시간동안 양극접합했다. 그 다음에 Si 다이어프램을 제조한 후, MLCA/Si 접합계면과 MLCA 구동을 통한 Si 다이어프램 변위특성을 분석 및 평가하였다. 다이어프램 형상에 따라 정밀한 변위 세어가 가능했으며 0.05-0.08 %FS의 우수한 선형성을 나타내었다. 또한, 측정동안 접합계면 균열이나 계면분리가 일어나지 않았다. 따라서, MLCA/Si기판 양각접합기술은 고성능 압전 MEMS 소자 제작공정에 유용하게 사용가능할 것이다.

• 센서학회지
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• 제16권5호
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• pp.325-330
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• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• 대한기계학회논문집A
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• 제26권6호
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• pp.1187-1193
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• 2002

Anodic bonding process has been quantitatively evaluated based on the Taguchi analysis of the interfacial fracture toughness, measured at the interface of anodically bonded silicon-glass bimorphs. A new test specimen with a pre-inserted blade has been devised for interfacial fracture toughness measurement. A set of 81 different anodic bonding conditions has been generated based on the three different conditions for four different process parameters of bonding load, bonding temperature, anodic voltage and voltage supply time. Taguchi method has been used to reduce the number of experiments required for the bonding strength evaluation, thus obtaining nine independent cases out of the 81 possible combinations. The interfacial fracture toughness has been measured for the nine cases in the range of 0.03∼6.12 J/㎡. Among the four process parameters, the bonding temperature causes the most dominant influence to the bonding strength with the influence factor of 67.7%. The influence factors of other process parameters, such as anodic voltage and voltage supply time, bonding load, are evaluated as 18%, 12% and 2.3%, respectively. The maximum bonding strength of 7.23 J/㎡ has been achieved at the bonding temperature of 460$\^{C}$ with the bonding load of 45gf/㎠, the applied voltage of 600v and the voltage supply time of 25minites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.160-163
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• 2003

This paper describes on anodic bonding characteristics of MLCA(Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100 %, input power $1\;/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA to Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-008 %FS. Moreover, any damages or separation of MICA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MICA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.