• Journal of the Korean Chemical Society
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• v.17 no.3
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• pp.198-206
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• 1973

We produced the glass beads using a spherical vessel which is rotable with the mix ture of releasing agent and glass powder in a electric furnace (apparatus 1), a tubing apparatus of electric furnace which can be gravitated a cullet (apparatus 2) and a tubing apparatus which is dispersible glass powders with the flame of propane gas (apparatus 3). The substrates which are Korean sodium silicates glass 1, 2, boro silicates glass and lead silicates glass are used and the size of cullets is 60-300 mesh. In the results of experimental apparatus, the preferable temperature of apparatus 1 is 880$^{\circ}C$, apparatus 2 is 980$^{\circ}C$ and apparatus 3 is 1100$^{\circ}C$. However, the method of apparatus 3 is more effective than the methods of apparatus 1 and 2 in view of treating time and rate of adhesion.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1218-1219
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• 2006

The shrinkage variation of Low Temperature Cofired Ceramics(LTCC) limits the size of the substrates that impose limitations on embedded passive components. This paper focuses on the method of minimizing or controlling planar shrinkage and reducing distortion during firing. The laminated sheets of alumina and glass were sintered at varying temperature, and depending on the amount of the glass ceramics. When the sintered of multi-layer structure with $Al_2O_3/Glass/Al_2O_3$, the glass infiltrated entirely into $Al_2O_3$ layer at the temperature of about $950^{\circ}C$ or higher.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.56-61
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• 2018

In this study, CIGS absorber layers were deposited on low-alkali glass and sodalime glass substrates and potasium floride (KF) of various thicknesses was supplied at an elevated temperature after the CIGS growth. The effect of KF post-deposition treatment on the two types of substrates was extremely different. On the low-alkali substrate, the open-circuit voltage (Voc) was improved but the fill-factor (FF) degradation was severe, whereas the sodalime substrate showed Voc deterioration and FF improvement. In the case of supplying 20 nm of KF on both substrates, the efficiency gain of 0.3~1.1%p was obtained. With increasing the KF thickness, a small protrusion-like microstructure developed on the surface of the absorber layer, and the microstructures that were not removed in the subsequent process were found to be the main cause of the FF loss.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1044-1048
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• 2007

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.137-141
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• 2009

AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.63-66
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• 2004

Transparent MgO thin films were deposited on glass substrates by electron beam evaporation of MgO (99.99%) under $O_2$ atmosphere at 150-250 $^{\circ}C$. These films were characterized for their useful properties such as thickness, transmission, and refractive index using ultraviolet / visible (UV/VIS) spectrophotometer, scanning electron microscopy (SEM), and Spectroscopic Ellipsometry. The thickness of MgO films were measured by alpha step instrument and found to be 600 nm to 1000 nm and are meeting the stoichiometry. The transmission spectrum of these films shows transmittance values ${\sim}$92%..

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1125-1131
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• 2004

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with rubbing alignment method on the two kinds of polyimide (PI) surfaces using thin plastic substrates. The NLC pretilt angles generated on thin plastic substrates are higher than that on the glass substrate. We study that AFM (atomic force microscope) image of rubbed PI surface with polymer film has formed the micro-groove. Also, EO characteristics of the TN-LCD with a rubbed PI surface based on polymer are almost the same as that of the TN-LCD with a rubbed PI surface based on glass.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.1
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• pp.123-126
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• 2010

$Cu_2O$ nanoparticles-based films are fabricated by spin-coating on glass substrates and their optoelectronic characteristics are investigated in this study. The $Cu_2O$ films are nearly all-transparent as high as 98% in a wavelength range from 400 nm to 900 nm and three exciton peaks associated with the sublevels in the conduction band are observed at the wavelengths shorter than 400 nm in the absorption spectrum. Under the illumination of the 325 nm wavelength light, the photocurrent efficiency of the $Cu_2O$ film is $1.8\times10^5 {\mu}A/W$ at a voltage of 2.5 V in air.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.9-13
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• 1995

In this paper, Zinc Oxide films, with a high degree of c-axis orientation, have been grown on glass substrates by a rf magnetron sputtering. The maximum crystal orientation was found to occur with substrate temperature 150$^{\circ}C$, input power 190W, oxygen rate 50%, target-substrate distance 55mm. It is proposed to achieve high-resistivity ZnO films by increasing the annealing temperature. The piezoelectric layers, preferred oriented with (002) perpendicular to the layer with 4.9$^{\circ}$, could be obtained by the annealing temperature 300$^{\circ}C$ in oxygen atmosphere. It is indicated that the relative permittivity is range from 8.9 to 9.8 in the frequency ranging from 10KHz to 5MHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.665-667
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• 2005

VIATRON TECHNOLOGIES has developed FE-RTP system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The system employs sequential heat treatment methods using temperature control and rapid thermal processor modules. The temperature control modules provide exceptionally uniform heating and cooling of the glass substrates to within ${\pm}2^a\;C$. The rapid thermal process that combines heating with field induction accelerates the treatment rates. The new FE-RTP system can process $730{\times}920mm$ glass substrates as thin as 0.4 mm. The uniform nature of poly-Si films produced by FE-RTP resulted in AMOLED panels with no laser-Muras. Furthermore, FE-RTP system also showed superior performances in other heat treatment processes involved in poly-Si TFT fabrications, such as dopant activation, gate oxide densification, hydrogenation, and pre-compaction.