• Title/Summary/Keyword: gate driver

Search Result 215, Processing Time 0.026 seconds

A New Design of Memory-in-Pixel with Modified S-R Flip-Flop for Low Power LCD Panel (저전력 LCD 패널을 위한 수정된 S-R 플립플롭을 가진 새로운 메모리-인-픽셀 설계)

  • Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2008.10a
    • /
    • pp.600-603
    • /
    • 2008
  • In this paper, a new circuit design named memory-in-pixel for low power consumption of the liquid crystal display (LCD) is presented. Since each pixel has a memory, it is able to express 8 color grades using the data saved in the memory without the operation of the gate and source driver ICs so that it can reduce the power consumption of the LCD panel. A memory circuit consists of modified S-R flip-flop (NAND-type) implemented in the pixel, which can supply AC bias for operating the liquid crystal (LC) with the interlocking clocks (CLK_A and CLK_B). This circuit is more complex than the inverter-type memory circuit, but it has lower power consumption of approximately 50% than the circuit. We have investigated the power consumption both NAND and inverter-type memory circuit using a Smart SPICE for the resolution of $96{\times}128$. The estimated power consumption of the inverter-type memory was about 0.037mW. On the other hand, the NAND-type memory showed power consumption of about 0.007mW.

  • PDF

A 77GHz MMIC Transceiver Module for Automotive Forward-Looking Radar Sensor

  • Kang, Dong-Min;Hong, Ju-Yeon;Shim, Jae-Yeob;Yoon, Hyung-Sup;Lee, Kyung-Ho
    • Proceedings of the IEEK Conference
    • /
    • 2006.06a
    • /
    • pp.609-610
    • /
    • 2006
  • A 77GHz MMIC transceiver module consisting of a power amplifier, a low noise amplifier, a drive amplifier, a frequency doubler and a down-mixer has been developed for automotive forward-looking radar sensor. The MMIC chip set was fabricated using $0.15{\mu}m$ gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from $76{\sim}77GHz$ with 15.5dBm output power. The chip size is $2mm{\times}2mm$. The low noise amplifier achieved a gain of 20dB in a band between $76{\sim}77\;GHz$ with an output power of 10dBm. The chip size is $2.2mm{\times}2mm$. The driver amplifier exhibited a gain of 23dB over a $76{\sim}77\;GHz$ band with an output power of 13dBm. The chip size is $2.1mm{\times}2mm$. The frequency doubler achieved an output power of -16dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is $1.2mm{\times}1.2mm$. The down-mixer demonstrated a measured conversion gain of over -9dB. The chip size is $1.3mm{\times}1.9mm$. The transceiver module achieved an output power of 10dBm in a band between $76{\sim}77GHz$ with a receiver P1dB of -28dBm. The module size is $8{\times}9.5{\times}2.4mm^3$. This MMIC transceiver module is suitable for the 77GHz automotive radar systems and related applications in W-band.

  • PDF

Development of a 3 kW Grid-tied PV Inverter With GaN HEMT Considering Thermal Considerations (GaN HEMT를 적용한 3kW급 계통연계 태양광 인버터의 방열 설계 및 개발)

  • Han, Seok-Gyu;Noh, Yong-Su;Hyon, Byong-Jo;Park, Joon-Sung;Joo, Dongmyoung
    • The Transactions of the Korean Institute of Power Electronics
    • /
    • v.26 no.5
    • /
    • pp.325-333
    • /
    • 2021
  • A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

Detour Behavior on the Expressway using Route Travel Data (경로형 통행데이터 기반 고속도로 우회행태 분석)

  • Lee, Sujin;Son, Sanghoon;Kim, Hyungjoo
    • The Journal of The Korea Institute of Intelligent Transport Systems
    • /
    • v.19 no.1
    • /
    • pp.58-70
    • /
    • 2020
  • Detour behavior on the expressway means that the driver uses the local road by passing the part of the expressway which is stagnant at the time of the traffic demand such as holidays. Since the detour rate was estimated through the survey at toll gate in the past, there was a difficulty in estimating the actual detour rate due to the small sample of the survey. In this study, we use DSRC-based route travel data to conduct empirical studies on detour patterns such as the estimation of actual detour rate, the improvement of travel time using detour road, and the correlation between traffic conditions on the expressway and detour rate. On the day of Chuseok and the day before Chuseok, the analysis of Giheung-DongtanIC→OsanIC and Seopyeongtaek IC→Walgott JC showed that the use of detour roads increased gradually during the congestion of the main line and travel time reduced when using detour roads, However, when the traffic congestion of the main line is not severe, the travel time increases when using the detour roads. The correlation between the traffic condition of the expressway and the actual detour rate has a negative correlation, which is consistent with the congestion pattern of the main line. The results of this study can be used to overcome limitations of detour pattern research based on surveys in the past and to establish a detour strategy for expressway sections where traffic demand is concentrated.

The Design of an Auto Tuning PI Controller using a Parameter Estimation Method for the Linear BLDC Motor (선형 추진 BLDC 모터에 대한 파라미터 추정 기법을 이용하는 오토 튜닝(Auto Tuning) PI 제어기 설계)

  • Cha Young-Bum;Song Do-Ho;Koo Bon-Min;Park Moo-Yurl;Kim Jin-Ae;Choi Jung-Keyng
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.10 no.4
    • /
    • pp.659-666
    • /
    • 2006
  • Servo-motors are used as key components of automated system by performing precise motion control as accurate positioning and accurate speed regulation in response to the commands from computers and sensors. Especially, the linear brushless servo-motors have numerous advantages over the rotary servo motors which have connection with the friction induced transfer mechanism such as ball screws, timing belts, rack/pinion. This paper proposes an estimation method of unknown motor system parameters using the informations from the sinusoidal driving type linear brushless DC motor dynamics and outputs. The estimated parameters can be used to tune the controller gain and a disturbance observer. In order to meet this purpose high performance Digital Signal Processor, TMS320F240, designed originally for implementation of a Field Oriented Control(FOC) technology is adopted as a controller of the liner BLDC servo motor. Having A/D converters, PWM generators, rich I/O port internally, this servo motor application specific DSP play an important role in servo motor controller. This linear BLDC servo motor system also contains IPM(Intelligent Power Module) driver and hail sensor type current sensor module, photocoupler module for isolation of gate signals and fault signals.