• Title/Summary/Keyword: gap between the layers

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Estimation of Heat Insulation and Light Transmission Performance According to Covering Methods of Plastic Greenhouses (플라스틱온실의 피복방식에 따른 보온 및 광투과 성능 평가)

  • Lee, Hyun-Woo;Kim, Young-Shik;Sim, Sang-Youn;Lee, Jong-Won;Diop, Souleymane
    • Journal of Bio-Environment Control
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    • v.22 no.3
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    • pp.270-278
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    • 2013
  • The objective of the present study is to provide data needed to decide covering method to be able to increase the thermal insulation and light transmittance efficiency of commercial greenhouse. The thermal insulation effect, PPF transmittance and quantity of condensation water were estimated in experimental tomato greenhouses covered with three types of coverings of single layer, air inflated and conventional double layers covering. The overall heat flow of air inflated double layers greenhouse was similar to that of conventional double layers greenhouse, but the temperature between covering material and thermal screen in air inflated double layers greenhouse was lower than that in conventional double layers greenhouse at the same outside temperature condition due to air leakage through the gap of roof vent. The overall heat transfer coefficients acquired by experiment that was performed in single layer and conventional double layers greenhouses were close to those obtained from model experiment. Even though the PPF transmittance of air inflated double layers greenhouse was lower than that of single layer greenhouse, which was greater than that of conventional double layers greenhouse. The quantity of condensation water on covering surface of single layer greenhouse was greater than that of air inflated double layers greenhouse due to lower covering surface temperature.

Zone-Melting Recrystallization of Si Films on $SiO_2$ with a Graphite-Strip-Heater (흑연 막대 발열체를 이용한 SOI구조의 Zone-melting 재결정화 연구)

  • 김현수;김춘근;민석기
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.4
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    • pp.527-533
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    • 1990
  • Zone-melting recrystallization (ZMR) system using two graphite heaters(a stationary sheet and a narrow movable bar) was constructed and implemented in recrystallization op Si films on insulating layers. The recystallized Si films were examined by Nomarski contrast optical microscopy after Dash etching, transmission electron diffraction pattern, and x-ray diffraction. With optimum conditions of process parameters(input powers of the bottom and upper heater, scanning speed of the upper heater, and the gap between sample and upper heater), the recrystallized Si layer has a (100) texture, but contains many subboundaries. The subgrains are misoriented by < 0.5\ulcorner and the average spacing between subboundaries is about 25\ulcorner.

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Analysis of the Effects by Multi-Stacking of Superstrates on Circular-Polarized Patch Antenna (원형편파 패치안테나에서 상부덮개의 다중 적층에 의한 효과 분석)

  • Lee, Sangrok
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.3
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    • pp.202-209
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    • 2014
  • In this paper, we analyzed the effects by multi-stacking superstrates over the circular-polarized patch antenna. The previous works considered a single-layered superstrate or a superstrate with multiple layers, and did not almost consider the axial ratio at the performance analysis. First, the effect of center frequency shift is analyzed by the variation of air-gap height between patch antenna and superstrate. The center frequency is down-shifted at the smaller air-gap height and has almost the same frequency as patch antenna at the air-gap height of $005{\lambda}_0$. Second, the antenna performance is analyzed by multi-stacking superstrates with the air-gap height of $005{\lambda}_0$. As the number of multi-stacked superstrates increase, antenna gain has a linear increase and axial ratio is exponentially deteriorated. In addition, it has also been observed that the antenna performance has the same trend with the number of multi-stacked superstrates as the thickness of superstrate increases. Finally, we confirmed that it is possible to design the CP patch antenna with the scalable gain and less than 3dB axial ratio by stacking the superstrate.

Improvement of shear deformation by controlling reduction per a rolling pass during asymmetrical cold rolling in AA 5052 (AA5052 판재의 비대칭 냉간압연 시 압연 패스당 압하율 제어에 의한 전단 변형 향상)

  • Kang, H.G.;Han, Y.H.;Huh, M.Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2007.05a
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    • pp.226-228
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    • 2007
  • During asymmetrical cold rolling in AA 5052 sheet a reduction per a rolling pass was varied to investigate the effect of the ratio of the contact length between the roll and sample ($l_c$) to the sheet thickness (d) on the formation of shear textures. In order to intensify the shear deformation during asymmetrical rolling, AA 5052 sheet was asymmetrically cold rolled without lubrication by using different roll velocities of upper and lower rolls. Asymmetrical rolling with $l_c$/d=1.8 led to the formation of texture gradients throughout the sheet thickness in which the outer thickness layers depicted shear textures and the center thickness layers displayed a rolling texture. Asymmetrical rolling with $l_c$/d=3.1 gave rise to the formation of shear textures in the whole through-thickness layer. The strain states associated with asymmetrical rolling were investigated by the finite element method (FEM) simulation. FEM results indicated that the evolution of deformation texture in a thickness layer is strongly governed by integrated values of strain rates and along the streamline in the roll gap.

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The Simulation of Electric Field Distribution of Dielectric Tube with Two Layers and Gloular Dielectric in Water (수중에서의 이중 절연 방전관과 구형 유전체의 전계 분포 시뮬레이션)

  • Lee, Dong-Hoon;Park, Jae-Youn;Park, Hong-Jae;Koh, Hee-Seog
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1143-1146
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    • 2003
  • This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

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Photoelectron Spectroscopy Studies of the Electronic Structures of Al/RbF and $Al/CaF_2$ Cathodes for $Alq_3$-based Organic Light-emitting Devices

  • Park, Yong-Sup;Lee, Jou-Hahn
    • Journal of Information Display
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    • v.6 no.1
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    • pp.28-32
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    • 2005
  • The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

Influence of Metal-Coating Layer on an Electrical Resistivity of Thick-Film-Type Thermoelectric Modules Fabricated by a Screen Printing Process (스크린 프린팅 공정에 의해 제조된 열전후막모듈의 전기저항에 미치는 금속코팅층의 영향)

  • Kim, Kyung-Tae;Koo, Hye-Young;Ha, Gook-Hyun
    • Journal of Powder Materials
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    • v.18 no.5
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    • pp.423-429
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    • 2011
  • Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 ${\mu}m$ in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

A study on numerical analysis of heat affected zone in detailed shape processing using Non-contact hot tool (비접촉식 열 공구를 이용한 미세 형상 가공에서의 열 영향부에 대한 수치적 모사에 관한 연구)

  • 김효찬;안동규;이상호;양동열
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.569-572
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    • 2003
  • In VLM-ST process, the fine detailed shape processing process is needed due to the use of thick sheets for layers. The developed process perform the fine detailed shape processing in VLM-ST parts using non-contact hot tool. To predict the heat-affected zone and temperature distribution of VLM-ST parts in detailed shaping, the heat flux from the tool to the surface was calculated for the finite element analysis by modeling the tool as a heat source of radiation. The dominant process parameters such as the radiated heat input, the tool speed, and the gap between the tool tip and the foam sheet (tool height) were considered in the analysis. The results showed a good agreement with the experiments.

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Effect of Simulated Acid Rain on Water Status of Pinus densiflora and P. koraiensis (인공 산성비가 소나무와 잣나무 잎의 수분상태에 미치는 영향)

    • Korean Journal of Plant Resources
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    • v.12 no.1
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    • pp.10-19
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    • 1999
  • The water status of Pinus densiflora and P. koraiensis was observed after the treatment of simulated acid rain for every month August 1997 to March 1998. Both of the species showed increase of dry weight, water saturation deficit and epidermis transpiration after treatment of simulated acid rain (pH 3.5) for first three months. On the contrary, water content was decreased in both the species after three month of simulated acid rain treatment. The effect of simulated acid rain, however, became weaker after that and no big difference was observed after seven month of treatment. Water potential of the leaf of both species became lower than that of the control(pH 5.6) after seven month treatment of simulated acid rain. The cuticle layers of the epidermis and florins ring were damaged seriously and the size of the gap between stomata became bigger after the treatment of simulated acid rain.

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Optical Properties of Column -II Nitride Semiconductors (III족 질화물반도체의 분광학적 성질)

  • 김선태;문동찬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.47-49
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    • 1995
  • We report the spectroscopic properties of column-III nitrifies of GaN, GaInN, and AlGaN. The column-III nitride semiconductors are promising materials to realize the current-injection-type blue-and ultraviolet (UV)-light-emitting devices with high performance. To acheive the lasing with low threshold, the devices are must constructed to double heterostructure by succesive epitaxial growth technique, and we must confine the carriers in the potential barrier and optical confinement in wave guide between barrier and active layers has different refractive index. The refractive index of column-III nitride semiconductors, however, are rarely reported. The measured refractive index was 2.9, and the observed characteristic peak near the enrgy gap was analysed using a dielectric function and may due to excitonic contribution.

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