• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.90-90
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• 2012

The electron/hole injections in organic electronic devices have long been an issue due to the large energy level mismatches between electrode and organic layer. To utilize the organic materials in electronic devices, functional thin layers have been used, which reduce the electron/hole injection barrier from electrode to organic material. Typically, inorganic compounds and organic molecules are used as an electron and hole injection layer, respectively. Recently, CsN3 and 1,4,5,8,- naphthalene-tetracarboxylic-dianhydride (NTCDA) are reported as a potential electron and hole injection layers. CsN3 shows unique properties that it breaks into Cs and N and thus Cs can dope organic layer into n-type. On the other side, hole injection anode, NTCDA forms gap states with anode material. In this presentation, we show the electronic structure changes upon the insertion of CsN3 and NTCDA at proper interfaces to reduce the charge injection barriers. These barrier reductions are correlated with device characteristics.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.73-79
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• 2008

We propose a novel metal-waveguide structure for sustaining long-range surface-plasmon-polaritons (LRSPP). The LRSPP waveguides are composed basically of two asymmetric metal layers: a very thin, finite-width metal strip on top of a metal slab with a dielectric gap in between them. Mode cut-off of LRSPPs excited on the double-metal waveguides is characterized by consistently investigating their dispersion relations and mode profiles. We also confirm experimentally the existence of low-loss, well-confined LRSPP modes by measuring far-field outputs emerging from an edge of the asymmetric double-metal waveguides. In the experiment, we have fabricated several types of SPP waveguide devices including straight lines, S-bend, and Y-branch consisting of gold strips (20 nm-thick, $5{\mu}m$-wide). Overall propagation loss of the proposed double-metal waveguides is quite comparable to that of single metal-strip waveguides, in addition the mode sizes can be tuned by increasing the core-insulator gap between the metal layers to get a higher coupling efficiency with a single-mode fiber in telecom wavelength. The proposed LRSPP waveguides may open up realization of SPP-waveguide sensors or nonlinear SPP-devices by replacing the core-insulator with a bio-fluid or a nonlinear medium.

• Korean Journal of Soil Science and Fertilizer
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• v.50 no.5
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• pp.336-344
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• 2017

The soil water characteristics curve (SWCC) represents the relation between soil water potential and soil water content. The shape and range of SWCC according to the relation could vary depending on soil characteristics. The objective of the study was to estimate SWCC depending on soil types and layers and to analyze the trend among them. To accomplish this goal, the unsaturated three soils were considered: silty clay loam, loam, and sandy loam soils. Weighable lysimeters were used for exactly measuring soil water content and soil water potential. Two fitting models, van Genuchten and Campbell, were applied. Two models entirely fitted well the measured SWCC, indicating low RMSE and high $R^2$ values. However, the large difference between the measured and the estimated was found at the 30 cm layer of the silty clay loam soil, and the gap was wider as soil water potential increased. In addition, the non-linear decrease of soil water content according to the increase of soil water potential tended to be more distinct in the sandy loam soil and at the 10 cm layer than in the silty clay loam soil and at the lower layers. These might be seen due to the various factors such as not only pore size distribution, but also cracks by high clay content and plow pan layers by compaction. This study clearly showed difficulty in the estimation of SWCC by such kind of factors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.102-110
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• 2002

In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS(microelectro-mechanical systems) application with high performance and various function. In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro-device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS application with high performance and various functions.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.363-368
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• 2010

N,N'-diphenyl-N,N'-bis(3-methylphenyl)1-1' biphenyl-4,4'-diamine (TPD) hole-transporting layers were deposited using a continuous slot-die coating method on ITO/PET flexible substrates. It is crucial that the substrates have a very smooth surface with a RMS roughness of less than 2 nm for the deposition of semiconductor nanocrystals or Quantum Dots. The parameters of the slot-die coating, including the solution concentration of the TPD, the gap between the slot-die and the substrates, and the coating speed were controlled in these experiments. To obtain full coverage of the TPD films on the ITO/PET substrates (40 mm wide and several meters long), the injection rates of the TPD solution were increased proportional to the coating speed of the flexible substrates. Additionally, the injection rates must be increased as the gap distance changes from 400 to 600 ${\mu}m$ at the same coating speed. A RMS surface roughness of less than 2 nm was obtained, in contrast to bare ITO/PET substrates, at 13 nm, as the coating speed and gap distance increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Progress in Superconductivity and Cryogenics
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• v.16 no.2
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• pp.42-46
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• 2014

In this study we investigated ac transport current losses in the face to face stack for the anti-parallel current flow, and compared the electromagnetic properties with those of the single SC tape as well as those of the same stack for the parallel current path. The gap between the SC tapes in the stack varied in order to verify the electromagnetic influence of the neighbors when current flows in opposite direction, and the model was implemented in the finite element method program by the commercial software, COMSOL Multiphysics 4.2a. Conclusively speaking, the loss was remarkably decreased for the anti-parallel current case, which is attributed the magnetic flux compensation between the SC layers due to the opposite direction of the current flows. As the gap between SC tapes was increased, the loss mitigation became less effective. Besides, the current density distribution is very flat cross the sample width for the narrower gap case, which is believed to be benefit for the power electric system. These results are all in good agreement with those predicted theoretically for an infinite bifilar stack.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.14 no.8
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• pp.3168-3186
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• 2020

Automatic topic essay generation (TEG) is a controllable text generation task that aims to generate informative, diverse, and topic-consistent essays based on multiple topics. To make the generated essays of high quality, a reasonable method should consider both diversity and topic-consistency. Another essential issue is the intrinsic link of the topics, which contributes to making the essays closely surround the semantics of provided topics. However, it remains challenging for TEG to fill the semantic gap between source topic words and target output, and a more powerful model is needed to capture the semantics of given topics. To this end, we propose a pretraining-based contextual self-attention (PC-SAN) model that is built upon the seq2seq framework. For the encoder of our model, we employ a dynamic weight sum of layers from BERT to fully utilize the semantics of topics, which is of great help to fill the gap and improve the quality of the generated essays. In the decoding phase, we also transform the target-side contextual history information into the query layers to alleviate the lack of context in typical self-attention networks (SANs). Experimental results on large-scale paragraph-level Chinese corpora verify that our model is capable of generating diverse, topic-consistent text and essentially makes improvements as compare to strong baselines. Furthermore, extensive analysis validates the effectiveness of contextual embeddings from BERT and contextual history information in SANs.

• Applied Chemistry for Engineering
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• v.25 no.6
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• pp.577-580
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• 2014

Indium hydroxy sulfide ($In(OH)_xS_y$) as a cadmium (Cd)-free buffer layer for $CuInGaSe_2$ (CIGS) solar cells was prepared by the chemical bath deposition (CBD) and the reaction time was optimized. The band gap energy and transmittance data alongside the thickness results from the direct observation with focused ion beam system (FIB) could be a powerful tool for optimizing the conditions. In addition, X-ray diffractometer (XRD), X-ray photoelectron microscopy (XPS), and scanning electron microscope (SEM) were also employed for the layer characterization. The results indicated that the optimum reaction time for $In(OH)_xS_y$ buffer layer deposition by CBD was 20 min at $70^{\circ}C$ under the conditions employed. At the optimum conditions, the buffer layer thickness was near 57 nm and the band gap energy was 2.7 eV. In addition, it was found that there was no XPS peak shift in between the buffer layers deposited on molybdenum (Mo)/glass and that on CIGS layer.

• ETRI Journal
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• v.38 no.2
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• pp.265-271
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• 2016

We analyzed the interface characteristics of Zn-based thin-film buffer layers formed by a sulfur thermal cracker on a $Cu(In,Ga)Se_2$ (CIGS) light-absorber layer. The analyzed Zn-based thin-film buffer layers are processed by a proposed method comprising two processes - Zn-sputtering and cracker-sulfurization. The processed buffer layers are then suitable to be used in the fabrication of highly efficient CIGS solar cells. Among the various Zn-based film thicknesses, an 8 nm-thick Zn-based film shows the highest power conversion efficiency for a solar cell. The band alignment of the buffer/CIGS was investigated by measuring the band-gap energies and valence band levels across the depth direction. The conduction band difference between the near surface and interface in the buffer layer enables an efficient electron transport across the junction. We found the origin of the energy band structure by observing the chemical states. The fabricated buffer/CIGS layers have a structurally and chemically distinct interface with little elemental inter-diffusion.