• Journal of the Korean Recycled Construction Resources Institute
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• v.6 no.3
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• pp.174-181
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• 2018

This paper examines the structural behavior of 3D printed concrete specimens with focus on the bond between the layers. The tensile bond and flexural strengths were investigated experimentally and compared with those of specimens made by conventional mold casting. The test parameters were the time gap between printing layers and the reinforcement between vertical layers. The results showed the 3D printed specimens had voids between layers and confirmed the strength reduction due to printing time gap and the stress concentration caused by the voids. Most of the reduction in tensile bond strength between layers was due to the stress concentration at least up to certain printing time gap. Moreover, beyond a certain printing time gap (24hours), the additional reduction in tensile bond strength reached a level that could affect the structural behavior. The reinforcement between layers was helpful to increase the ductile behavior which is essential to prevent the sudden collapse of the structure. In addition, the reduction in flexural strength due to the stress concentration by the voids was observed and should be considered in the design of 3D printed wall structures against the lateral load.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.822_823
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• 2009

Superconducting fault current limiters (SFCLs) provide one of the most effective solutions to cope with enormous increase of fault current level. The 13.2 kV/ 630 A class resistive SFCL using coated conductor (CC) was developed and its short-circuit test was successful. Successful commercialization of the SFCL requires that no loss is produced by impedance of limiting coil during normal operation. Since the limiting coil consists of inner layer and outer layer, gap length between the layers is an important parameter to analyze the electromagnetic characteristics of coil. This paper deals with the electromagnetic characteristics of coil according to gap length through the simulation and analysis in comparison with experiment results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.93-97
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• 2009

We analyzed voltage characteristics of toner particle type display according to particle layers and cell gap between two electrodes and ascertained the aging effects by measuring the response time of particles with and without aging process. The threshold/driving/breakdown voltage is proportional to layers of toner particles and cell gap and the response time at driving voltage is faster than that of threshold and breakdown voltage because of different q/m of color and black particles. The analysis of response time is a method of estimation of optical characteristics, driving voltage and particle lumping and these results are promoted by aging process. We use the laser and photodiode to measure response time and optical properties. It has not been studied and reported to analyze the relationship of response time, threshold/driving/breakdown voltage, lumping phenomena, cell gap, and aging process for toner particle type display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.465-467
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• 1997

The oscillating properties of quartz Crystal Microbalance(QCM) were analyzed by electrical measurement. We tried to analyze the properties of quartz crystal coated with Langmuir-Bladgett(LB) films using the frequency and resistance at resonance in the electrical equivalent circuit. The resonant frequency was decreased linearly as to layers of LB films, however, there are some gap between theoretical values, Sauerbrey's equation and experimental values. The resistance was increase nonlinearly as to layers.

• Journal of applied mathematics & informatics
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• v.25 no.1_2
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• pp.315-327
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• 2007

Mathematical aspects of the electromagnetic surface-wave propagation are examined for the dielectric core consisting of multiple sub-layers, which are embedded in the gap between the two bounding cladding metals. For this purpose, the linear problem with a partial differential wave equation is formulated into a nonlinear eigenvalue problem. The resulting eigenvalue is found to exist only for a certain combination of the material densities and the number of the multiple sub-layers. The implications of several limiting cases are discussed in terms of electromagnetic characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.11-11
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• 2011

In this talk, I will discuss roles of pseudo vector and scalar potential in changing physical properties of graphene systems. First, graphene under small uniaxial strain is shown to be described by the generalized Weyl's Hamiltonian with inclusion of pseudo vector and scalar potential simultaneously [1]. Thus, strained graphene is predicted to exhibit velocity anisotropy as well as work function enhancement without any gap. Second, if homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap [2]. This phenomenon is made possible by generation of inequivalent pseudo scalar potentials in the two graphene layers. Third, when very tiny lateral interlayer shift occurs in bilayer graphene, the Fermi surfaces of the system are shown to undergo Lifshitz transition [3]. We will show that this unexpected hypersensitive electronic topological transition is caused by a unique interplay between the effective non-Abelian vector potential generated by sliding motions and Berry's phases associated with massless Dirac electrons.

• Tribology and Lubricants
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• v.36 no.5
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• pp.290-296
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• 2020

When two layers of carbon nanotube (CNT) arrays are loaded to mate, the free ends of individual CNTs come into contact at the interface of the two layers. This leads to a higher contact resistance due to a smaller contact region. However, when the free CNT ends of one array penetrate into the mating array, the contact region increases, effectively lowering the contact resistance. To explore the penetration of mating CNTs, we perform molecular dynamic simulations of a simple unit cell model, incorporating four CNTs in the lower array layer coupled with a single moving CNT on the upper layer. The interaction with neighboring CNTs is modelled by long-range carbon bond order potential (LCBOP I). The model structure is optimized by energy minimization through the conjugate gradient method. A NVT ensemble is used for maintain a room temperature during simulation. The time integration is performed through the velocity-Verlet algorithm. A significant vibrational motion of CNTs is captured when penetration is not available, resulting in a specific vibration mode with a high frequency. Due to this vibrational behavior, the random behaviors of CNT motion for predicting the penetration are confirmed under the specific gap distances between CNTs. Thus, the probability of penetration is examined according to the gap distance between CNTs in the lower array and the aspect ratio of CNTs. The penetration is significantly affected by the vibration mode due to the van der Waals forces between CNTs.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.421-427
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• 2015

In this paper, a description is given of finite element method (FEM) simulations of the elastic bending modulus of multi-layered graphene sheets that were carried out to investigate the mechanical behavior of graphene sheets with different gap thicknesses through molecular mechanics theory. The interaction forces between layers with various gap thicknesses were considered based on the van der Waals interaction. A finite element (FE) model of a multi-layered rectangular graphene sheet was proposed with beam elements representing bonded interactions and spring elements representing non-bonded interactions between layers and between diagonally adjacent atoms. As a result, the average elastic bending modulus was predicted to be 1.13 TPa in the armchair direction and 1.18 TPa in the zigzag direction. The simulation results from this work are comparable to both experimental tests and numerical studies from the literature.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.52 no.6
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• pp.271-277
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• 2003

It is important to control layer current distributions of coaxial multi-layer HTS cables, because a homogeneous layer current distribution decreases AC loss and can supply the largest operational current. We have extended the theory that treat the operational current more than the critical current by considering V-I nonlinear characteristics of HTS tapes including flux flow resistance and contacting resistance between the cable and terminals. It is important to investigate the current distribution under the condition of operational current more than the critical current of cable, because the cable has experiences of fault current. In order to verify the extended theory, we have fabricated a two layers cable with the same twisting layer pitch. It was observed that almost all the operational current less than the critical current flowed on the outer layer because of its lower inductance. In case of operational current more than critical currents of layers, the flux flow resistances affect strongly current waveform and thereby the currents of layers were determined by the flux flow resistances. And we investigated breakdown characteristics in $LN_{2}$/paper composite insulation system for the application to a HTS cable. In this experiment, we got some information out of that the electrical characteristics of the insulation materials depends on the condition of butt gap.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.61.1-61.1
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• 2011

We report on a detailed study on gap-state distribution in thin amorphous silicon layers(a-Si:H) with film thickness between 5 nm and 20 nm c-Si wafers performed by UV excited photoelectron spectroscopy(UV-PES). We measured how the work function, the gap state density, the position of the Fermi-level and the Urbch-energy depend on the layer thickness and the doping level of the ultra thin a-Si:H(n) layer. It was found, that for phosphorous doping the position of the Fermi level saturates at $E_F-E_V$=1.47 eV. This is achieved at a gas phase concentration of 10000 ppm $PH_3$ in the $SiH_4/H_2$ mixture which was used for the PECVD deposition process. The variation of the doping level from 0 to 20000 ppm $PH_3$ addition results in an increase of the Urbach energy from 65 meV to 101 meV and in an increase of the gap state density at midgap($E_i-E_V$=0.86eV) from $3{\times}10^{18}$ to $2{\times}1019cm^{-3}eV^{-1}$.