• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.80-81
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• 2012

Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high aspect ratio contact (UHARC) profile without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon plasmas with major advantage of the sidewall passivation have been used commonly with numerous additives to obtain the ideal etch profiles. However, they still suffer from formidable challenges such as tight limits of sidewall bowing and controlling the randomly distorted features in nanoscale etching profile. Furthermore, the absence of the available plasma simulation tools has made it difficult to develop revolutionary technologies to overcome these process limitations, including novel plasma chemistries, and plasma sources. As an effort to address these issues, we performed a fluorocarbon surface kinetic modeling based on the experimental plasma diagnostic data for silicon dioxide etching process under inductively coupled C4F6/Ar/O2 plasmas. For this work, the SiO2 etch rates were investigated with bulk plasma diagnostics tools such as Langmuir probe, cutoff probe and Quadruple Mass Spectrometer (QMS). The surface chemistries of the etched samples were measured by X-ray Photoelectron Spectrometer. To measure plasma parameters, the self-cleaned RF Langmuir probe was used for polymer deposition environment on the probe tip and double-checked by the cutoff probe which was known to be a precise plasma diagnostic tool for the electron density measurement. In addition, neutral and ion fluxes from bulk plasma were monitored with appearance methods using QMS signal. Based on these experimental data, we proposed a phenomenological, and realistic two-layer surface reaction model of SiO2 etch process under the overlying polymer passivation layer, considering material balance of deposition and etching through steady-state fluorocarbon layer. The predicted surface reaction modeling results showed good agreement with the experimental data. With the above studies of plasma surface reaction, we have developed a 3D topography simulator using the multi-layer level set algorithm and new memory saving technique, which is suitable in 3D UHARC etch simulation. Ballistic transports of neutral and ion species inside feature profile was considered by deterministic and Monte Carlo methods, respectively. In case of ultra-high aspect ratio contact hole etching, it is already well-known that the huge computational burden is required for realistic consideration of these ballistic transports. To address this issue, the related computational codes were efficiently parallelized for GPU (Graphic Processing Unit) computing, so that the total computation time could be improved more than few hundred times compared to the serial version. Finally, the 3D topography simulator was integrated with ballistic transport module and etch reaction model. Realistic etch-profile simulations with consideration of the sidewall polymer passivation layer were demonstrated.

• 분석과학
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• 제34권2호
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• pp.87-98
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• 2021

In this study, we developed the nanoparticle multi-generator by 3D printer fusion deposition modeling (FDM) method that can reliably generate and deliver nanoparticles at a constant concentration for inhalation risk assessment. A white ABS filament was used as the test material, and SMPS was used for concentration analysis such as particle size and particle distribution. In the case of particle size, the particle size was divided by 100 nm or less and 100 to 1,000 nm, and the number of particles concentration, mass concentration, median diameter of particles, geometric average particle diameter, etc were measured. The occurrence conditions were the extruder temperature, the extruding speed of the nozzle, and the air flow rate, and experiments were conducted according to the change of conditions including the manufacturer's standard conditions. In addition, the utility of inhalation risk assessment was reviewed through a stability maintenance experiment for 6 h. As a result of the experiment, the size of the nanoparticles increased as the discharger temperature increased, as the discharge speed of the nozzle increased, and as the air flow rate decreased. Also, a constant pattern was shown according to the conditions. Even when particles were generated for a long time (6 h), the concentration was kept constant without significant deviation. The distribution of the particles was approximately 80 % for particles of 60 nm to 260 nm, 1.7 % for 1 ㎛ or larger, 0.908 mg/㎥ for the mass concentration, 111 nm for MMAD and 2.10 for GSD. Most of the ABS particles were circular with a size of less than 10 nm, and these circular particles were aggregated to form a cluster of grape with a size of several tens to several hundred nm.