• Title/Summary/Keyword: forward multiplier effect

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A Study on the Induce Effects of Energy Consumption among Industries (산업별 에너지 소비의 유발효과에 관한 연구)

  • Cho, Sang-Sup;Kim, Dong-Yeub;Kang, Shin-Won
    • Environmental and Resource Economics Review
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    • v.18 no.4
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    • pp.637-652
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    • 2009
  • We measure and compare inducements of energy consumption in different industry sectors using inter-industry input and output tables of 1995, 2000 and 2005. We also compute the multiplier effects that relate to the directions of future economic effects. Key Findings are as follows. First, we observe continues decreasing linkage effects in all industries over period of 1995 to 2007. Second, backward multiplier of energy consumption were highest in the material related industry and chemical industry. As for inter-industry inducements, the indirect backward multipliers were high in the other industry. Third, the forward multiplier effect of energy consumption were as same as the backward multiplier effect's sectors. The indirect forward multipliers, however, were highest in the material related industry and chemical industry. The above findings show that since implementing pro-environmental policy in 2000s, the industries structure for reducing energy consumption has been transformed.

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Measuring Economic Externalities of IT and R&D

  • Rim, Myung-Hwan;Cho, Sang-Sup;Moon, Choon-Geol
    • ETRI Journal
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    • v.27 no.2
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    • pp.206-218
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    • 2005
  • We measure and compare externalities of IT and R&D capital stocks in different Korean industry sectors using inter-industry input-output tables of 1985, 1990, 1995 and 2000. We also compute the multiplier effects that relate to the directions of future economic effects. The key findings are as follows. First, we observed continuous capital deepening in all nine industries over the period of 1985 to 2000. Second, the backward multipliers of IT capital were the highest in the manufacturing industry. As for inter-industry externalities, the indirect backward multipliers, which exclude intra-industry backward multiplier effects within the industry, were also the highest in the manufacturing industry. Third, the forward multiplier effects of IT capital stock were the most substantial in the construction industry during the 1980s and in the manufacturing industry thereafter. Finally, using the transition multiplier matrix reflecting the backward effects of the two capitals in the past, the economic backward effects, especially the external economic effects, are predicted to increase through 2010 among all industries. The above findings suggest that, in order to maximize the forward and backward effects of the ever-increasing IT capital, we need to formulate an industry policy reducing the cost of capital accumulation in the manufacturing industry through improvement in productivity of the IT industry.

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Characterization of Schottky Diodes and Design of Voltage Multiplier for UHF-band Passive RFID Transponder (UHF 대역 수동형 RFID 태그 쇼트키 다이오드 특성 분석 및 전압체배기 설계)

  • Lee, Jong-Wook;Tran, Nham
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.7 s.361
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    • pp.9-15
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    • 2007
  • In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.