• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.324-325
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• 2008

In this Study, We fabricated a plasma discharge cluster with external electrodes which can be applied to flexible backlight in a polymer substrate and investigated the discharge characteristics. The Sealing process was progressed in vacuum chamber, which enable to fabricate plasma discharge cluster. The results of discharge characteristics show that the static memory margin of plasma discharge cluster was increased, as Ne/Xe(5%) gas pressure was increased. also, When gas pressure was 100torr at 600um of electrode gap, we have obtained high luminance of a plasma discharge cluster.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 1988년도 가을 학술발표회 논문집
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• pp.13-17
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• 1988

An efficient model for three-dimensional analysis of multistory structures with flexible floor diaphragms is proposed in this paper. Three-dimensional analysis of a building structure using a finite element model requires tedious input data preparation, longer computation time, and larger computer memory. The model proposed in this study is developed by assembling a series of two-dimensional resisting systems and is considered to overcome the shortcomings of a three-dimensional finite element model without deteriorating the accuracy of analysis results. Static and dynamic analysis results obtained using the proposed model are in excellent agreements to those obtained using three-dimensional finite element models in terms of displacements, periods, mode shapes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.433-435
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• 2005

We have studied the realigning behavior of liquid crystal molecules in liquid crystalline polymer/liquid crystal(LCP/LC) system when they are exposed to external stimulation such as bending and pressing. The birefringence of the LCP/LC in a flexible display device was measured as a function of bending or pressing deformation. The microscopic dynamic behavior of main chain, side chain, and the LC were characterized by FTIR and polarization optical microscopy. When the device is deformed in scattering memory state, liquid crystal(LC) director is found to align from randomly oriented domain state(scattering state) to homeotropic state.

• 전산구조공학
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• 제2권1호
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• pp.47-53
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• 1989

An efficient model for three-dimensional analysis of multistory structures with flexible floor diaphrgms is proposed in this paper. Three-dimensional analysis of a building structure using a finite element model requires tedious input data preparation, longer computation time, and larger computer memory. The model proposed in this study is developed by assembling a series of two-dimensional resisting systems and is considered to overcome the shortcomings of a three-dimensional finite element model without deteriorating the accuracy of analysis results. Static and dynamic analysis results obtained using the proposed model are in excellent agreement with those obtained using three-dimensional finite element models in terms of displacement, periods, and mode shapes. Effects of floor diaphragm flexibility on seismic response of multistory building structures are investigated.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.12.1-12.1
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• 2009

For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

• Journal of Magnetics
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• 제21권4호
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• pp.491-495
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• 2016

We developed an embedded Object-Oriented Micromagnetic Frame (OOMMF) script schemes for more flexible simulations for complex and dynamic mircomagnetic behaviors. The OOMMF can be called from any kind of softwares by system calls, and we can interact with OOMMF by updating the input files for next step from the output files of the previous step of OOMMF. In our scheme, we set initial inputs for OOMMF simulation first, and run OOMMF for ${\Delta}t$ by system calls from any kind of control programs. After executing the OOMMF during ${\Delta}t$, we can obtain magnetization configuration file, and we adjust input parameters, and call OOMMF again for another ${\Delta}t$ running. We showed one example by using scripting embedded OOMMF scheme, tunneling magneto-resistance dependent switching time. We showed the simulation of tunneling magneto-resistance dependent switching process with non-uniform current density using the proposed framework as an example.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.393-395
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• 2009

We fabricated oxide and oxide/organic hybrid TFTs on a glass substrate using the photolithography process under $200^{\circ}C$. We adopt the solution processed organic ferroelectric materials of P(VDF-TrFE) and polyimide (KSPI) insulator for 1-T structure memory and flexible device, respectively. All devices have successfully operated and showed the possibility of hybrid TFTs for the application to the flexible electronic devices.

• 한국시뮬레이션학회논문지
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• 제5권2호
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• pp.25-40
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• 1996

Modeling of systems for intensive knowledge-based processing requires a modeling methodology that makes efficient access to the information in huge data base models. The proposed level access mothodology is a modeling approach applicable to systems where data is stored in a hierarchical and modular modules of active memory cells(processor/memory pairs). It significantly reduces the effort required to create discrete event simulation models constructed in hierarchical, modular fashion for above application. Level access mothodology achieves parallel access to models within the modular, hierarchical modules(clusters) by broadcasting the desired operations(e.g. querying information, storing data and so on) to all the cells below a certain desired hierarchical level. Level access methodology exploits the capabilities of object-oriented programming to provide a flexible communication paradigm that combines port-to-port coupling with name-directed massaging. Several examples are given to illustrate the utility of the methodology.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.235-238
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• 2002

This paper proposes a novel scheme of designating non-cacheable addresses of memories in embedded systems of multi-master architectures without a Memory Management Unit (MMU). As a solution for data coherency problem between external memories and a cache memory, we proposes a cache masking scheme by allocating the most significant bit of address not used in 32-bit address system as indicator bit to designate non-cacheable address. As this scheme enables non-cacheable area designation every address, the simpler in the aspect of hardware and more flexible size of non-cacheable area can be obtained.