• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.440-440
• /
• 2011

We report on the non-volatile memory characteristics of a bistable organic memory (BOM) device with Au nanoparticles (NPs) embedded in a conducting poly N-vinylcarbazole (PVK) colloids hybrid layer deposited on flexible polyethylene terephthalate (PET) substrates. Transmission electron microscopy (TEM) images show the Au nanoparticles distributed isotropically around the surface of a PVK colloid. The average induced charge on Au nanoparticles, estimated using the C-V hysteresis curve, was large, as much as 5 holes/NP at a sweeping voltage of ${\pm}3$ V. The maximum ON/OFF ratio of the current bistability in the BOM devices was as large as $1{\times}105$. The cycling endurance tests of the ON/OFF switching exhibited a high endurance of above $1.5{\times}105$ cycles and a high ON/OFF ratio of ~105 could be achieved consistently even after quite a long retention time of more than $1{\times}106$ s.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.75-77
• /
• 2008

Flexible electronics devices such as plastic display, thin film battery, membrane switch, organic memory for smart card applications will be presented. The performance and power consumption of various display technologies will be compared for OTP requirement in smart cards. Wireless power transmission by RF coupling through an antenna provides a potential power solution to smart cards. Finally, the general trend of smart card future developments will be discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.118-118
• /
• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Journal of Information Display
• /
• v.12 no.4
• /
• pp.195-198
• /
• 2011

Proposed herein is a flexible bistable chiral splay nematic display mode with an enhanced memory retention time under external distortion. By adopting the polymerized reactive-mesogen structure mixed in a liquid crystal layer, local anchoring energy is generated on the boundary between the polymer structures, and the relaxation from the ${\pi}$-twisted state to the initial splay state could be interrupted. As a result, the memory retention time becomes significantly longer, and the stability against the external distortion is enhanced.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.705-706
• /
• 2010

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.13-13
• /
• 2009

We have investigated the fabrication and properties of bendable PZT film formed on plastic substrates for the application in flexible memory. These devices used the PZT active layer formed on $SiO_2/Si$ wafer by sol-gel method with optimized device layouts and Pt electrodes. After etching Pt/PZT/Pt layers, patterned by photolithography process. these layers were transferred on PET plastic substrate using elastomeric stamp. The level of performance that can be achieved approaches that of traditional PZT. devices on rigid bulk wafers.

• Electronics and Telecommunications Trends
• /
• v.39 no.1
• /
• pp.62-73
• /
• 2024

Artificial intelligence relies on data-driven analysis, and the data processing performance strongly depends on factors such as memory capacity, bandwidth, and latency. Fast and large-capacity memory can be achieved by composing numerous high-performance memory units connected via high-performance interconnects, such as Compute Express Link (CXL). CXL is designed to enable efficient communication between central processing units, memory, accelerators, storage, and other computing resources. By adopting CXL, a composable computing architecture can be implemented, enabling flexible server resource configuration using a pool of computing resources. Thus, manufacturers are actively developing hardware and software solutions to support CXL. We present a survey of the latest software for CXL memory utilization and the most recent CXL memory emulation software. The former supports efficient use of CXL memory, and the latter offers a development environment that allows developers to optimize their software for the hardware architecture before commercial release of CXL memory devices. Furthermore, we review key technologies for improving the performance of both the CXL memory pool and CXL-based composable computing architecture along with various use cases.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.67-67
• /
• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• Journal of the Korean Society for Precision Engineering
• /
• v.12 no.9
• /
• pp.167-174
• /
• 1995

This paper experimentally demonstrates the feasibility of using shape memory alloy(SMA) actuators in controlling structural vibrations of a flexible cantilevered beam. The dynamic characteristics of the SMA actuator are identified and integrated with the beam dynamics. Three types of control schemes; constant amplitude controller(CAC), proportional amplitude controller (PAC) and sliding mode controller(SMC) are designed. The CAC and PAC are determined on the basis of physical phenomenon of the SMA actuator, while teh SMC is formulated in a mathematical manner. The proposed controllers are implemented and evaluated at various operating condirions by investigating the control level of suppression in transient vibration.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.231-232
• /
• 2016

We have fabricated the nc-Si, IGZO based nonvolatile memory TFTs using mobile protons, which can be generated by simple hydrogen insertion process via H-NB treatment at room temperature. The TFT devices above exhibited reproducible hysteresis behavior, stable ON/OFF switching, and non-volatile memory characteristics. Also executed hydrogen treatment in order to figure out the difference of mobile proton generation between PECVD and our modified H-NB CVD. The room temperature proton-insertion process can reveal flexible inorganic based all-in-one display panel including driving circuit and memory circuit.