• Title/Summary/Keyword: flat panel displays

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Studying the $SrTiO_3$: Pr cathode-luminescence

  • Kargin, N.I.;Vorobiev, V.A.;Sinelnikov, B.M.;Kuznetsov, U.V.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.268-269
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    • 2006
  • The estimation of applicability $SrTiO_3:Pr^{3+}$, Al to a class low-voltage flat-panel displays based on field emission effect, which have average value anode voltage $U_a=300V$ and current density $j=100\;mA/sm^2$ at duty 240, has given positive result. In the same time observably for the most effective sample in similar conditions of excitation high brightness - more than $500\;Kd/m^2$ and linear brightness dependences from current density and voltage allows to decrease greatly the power which consumed by the device.

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Al-doped ZnO via Sol-Gel Spin-coating as a Transparent Conducting Thin Film

  • Nam, Gil-Mo;Kwon, Myoung-Seok
    • Journal of Information Display
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    • v.10 no.1
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    • pp.24-27
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    • 2009
  • A simple nonalkoxide sol-gel route for depositing an Al-doped ZnO thin film on a glass substrate was derived in this study. The initial Al dopant concentration in the sol-gel preparation varied and ranged from 0 to 5%. The sol-gel-derived thin films showed c-plane preferred crystallization of their hexagonal phase, with nanosized grain structures. First and second post-heat-treatments were carried out to improve the film’s electrical resistivity. The carrier density and the Hall mobility were measured and discussed to explain the electrical resistivity. The optical transmittance within the visible range showed compatible properties, which indicates the possible use of A1-doped ZnO as a transparent electrode in flat panel displays.

Simulation Method of Temperature Dependent Threshold Voltage Shift in Metal Oxide Thin-film Transistors (온도에 의한 산화물 박막트랜지스터의 문턱전압 이동 시뮬레이션 방안)

  • Kwon, Seyong;Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.3
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    • pp.154-159
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    • 2015
  • In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

An In-Situ Optical Study on Silicon Crystallization Process Using an Excimer Laser (Excimer Laser응용 실리콘 결정화 공정에 대한 In-Situ 광학적 연구)

  • Kim, W.J.;Y, C.-Hwan;Park, S.H.;Kim, H.J.
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.1407-1411
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    • 2003
  • Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM analysis. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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An Optical Study on ELC Process of Amorphous Silicon (비정질 실리콘의 ELC 공정에 대한 광학적 연구)

  • 김우진;윤창환;박승호;김형준
    • Laser Solutions
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    • v.6 no.2
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    • pp.9-17
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    • 2003
  • Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.

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Research of Measurement and Evaluation of White Uniformity Considering Visual Angle on TFT-LCD (TFT-LCD에서 시야각을 고려한 White Uniformity 측정 및 평가에 대한 연구)

  • Chang, Sung-Ho;Seo, Sang-Won
    • Journal of the Ergonomics Society of Korea
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    • v.26 no.4
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    • pp.33-39
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    • 2007
  • In the full white pattern, white uniformity means the degree of uniform distribution of white color and luminance across the whole screen. Among the FPDs(Flat Panel Displays), the TFT-LCD has weak point of viewing angle. The viewing angle considering location and direction can cause different image quality of the TFT-LCD. Therefore, white uniformity of the TFT-LCD must consider viewing angle. Based on international standards, this study proposes an alternative that is realistic and ergonomic measurement of white uniformity of the TFT-LCD.

High Performance Thin-Film Transistors Based on Zinc Oxynitride Semiconductors: Experimental and First-Principles Studies

  • Kim, Yang-Soo;Kim, Jong Heon;Kim, Hyun-Suk
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.42-46
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    • 2016
  • The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

Analysis of Chattering Problem of a Glass Transfer Robot Hand (글래스 반송용 로봇핸드의 채터링 원인 해석)

  • Kim Joo-Yong;Kang Chul-Goo
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.2
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    • pp.98-104
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    • 2005
  • A glass transfer robot is used for handling LCDs in the production line of flat panel displays under clean environments. During glass transfer operations of the robot, chattering phenomenon occurs at the robot hand. This deteriorates the accuracy and repeatability of the end-effector of the robot. In this paper, we present the kinematic solution of the robot and then analyze the cause of this chattering phenomenon in view of the mechanism and servo control and propose a practical solution that can reduce the chattering significantly at the robot hand of the glass transfer robot.

Poly-Silicon TFT's on Metal Foil Substrates for Flexible Displays

  • Hatalis, Miltiadis;Troccoli, M.;Chuang, T.;Jamshidi, A.;Reed, G.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.692-696
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    • 2005
  • In an attempt to fabricate all inclusive display systems we are presenting a study on several elements that would be used as building blocks for all-on-board integrated applications on stainless steel foils. These systems would include in the same substrate all or many of the components needed to drive a flat panel OLED display. We are reporting results on both digital and analog circuits on stainless steel foils. Shift registers running at speeds greater than 1.0MHz are shown as well as oscillators operating at over 40MHz. Pixel circuits for driving organic light emitting diodes are presented. The device technology of choice is that based on poly-silicon TFT technology as it has the potential of producing circuits with good performance and considerable cost savings over the established processes on quartz or glass substrates (amorphous Silicon a-Si:H or silicon on Insulator SOI).

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Real-Time Continuous-Scale Image Interpolation with Directional Smoothing

  • Yoo, Yoonjong;Shin, Jeongho;Paik, Joonki
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.3
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    • pp.128-134
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    • 2014
  • A real-time, continuous-scale image interpolation method is proposed based on a bilinear interpolation with directionally adaptive low-pass filtering. The proposed algorithm was optimized for hardware implementation. The ordinary bi-linear interpolation method has blocking artifacts. The proposed algorithm solves this problem using directionally adaptive low-pass filtering. The algorithm can also solve the severe blurring problem by selectively choosing low-pass filter coefficients. Therefore, the proposed interpolation algorithm can realize a high-quality image scaler for a range of imaging systems, such as digital cameras, CCTV and digital flat panel displays.