• Korean Journal of Materials Research
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• v.21 no.2
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• pp.78-82
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• 2011

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.121-121
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• 2003

NiO thin films are very attractive for use as an antiferromagnetic layer, p-type transparent conducting films, in electrochromic devices and functional sensor layer for chemical sensors, due to their excellent chemical stability, as well as optical, electrical and magnetic properties. In addition, (100)- and (111)-oriented NiO films can be used as buffer layers on which to deposit other oriented oxide films, such as c-axis-oriented perovskite-type ferromagnetic films and superconducting films, because of the similarity in symmetry of oxygen ion lattice and lattice constants between the NiO films and the oriented oxide films. Thus, controlling the crystallographic orientation and surface roughness of the NiO films for a buffer layer are very important.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.199-205
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• 2005

Polycrystalline cadmium sulfide(CdS) thin films were deposited on glass substrate by chemical bath deposition(CBD) and vacuum evaporation (VE) techniques. VE-CdS films consisted primarily of hexagonal phase, whereas CBD CdS films containing primarily the cubic form. VE-grown films were shown to have better crystallinity than CBD-grown films. The grain size of the CBD films is smaller than the ones of VE films. VE-CdS films exhibited relatively high transmittance in the above-gap region and band gap compared with CBD films. However, CdTe solar cells with these low quality CBD-CdS layers yield higher and more stable characteristics. Current-voltage-temperature measurements showed that the current transport for both cells was controlled by both tunneling and interface recombination but the cells with CBD-CdS displayed less tunneling.

• Journal of Applied Biological Chemistry
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• v.43 no.2
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• pp.79-85
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• 2000

Biodegradable films were prepared from roasted sesame meal and rice bran. Acetic anhydride, succinic anhydride, and formaldehyde were added to the film-forming solutions, and their effects on tensile strength, percent elongation, water vapor permeability, and water solubility of the films were studied. Roasted sesame meal did not form film without acylation or addition of formaldehyde. Acylated roasted sesame films had higher tensile strength and water-solubility, and lower % elongation than rice bran films. Acylation with acetic and succinic anhydrides increased tensile strength, percent elongation, and water solubility of rice bran films, but decreased water vapor permeability. Treatment with formaldehyde increased tensile strength of roasted sesame and rice bran films and % elongation of rice bran films, while reducing water-solubility of roasted sesame and rice bran films and water vapor permeability of rice bran films.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.620-622
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• 2005

DuPont Teijin Films (DTF) have developed a family of films engineered specifically for the flexible electronics market. $Teonex^{(R)}Q65A$ is a biaxially oriented crystalline polyester with an engineered surface and it is emerging as a competitive material for the base substrate in OLED displays and active matrix backplanes. This contribution will describe the properties of this film, its uniquely different property set compared to amorphous high performance films and discuss examples of the film in use in flexible electronic applications.

• 한국포장학회:학술대회논문집
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• 2006.11a
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• pp.54-73
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• 2006

Four different types of chitosan-based nanocomposite films were prepared using a solvent casting method by incorporating with four types of nanoparticles, i.e., an unmodified montmorillonite (Na-MMT), an organically modified montmorillonite (Cloisite 30B), a Nano-silver, and a Ag-zeolite (Ag-Ion). X-ray diffraction patterns of the nanocomposite films indicated that a certain degree of intercalation was formed in the nanocomposite films, with the highest intercalation in the Na-MMT-incorporated films followed by films with Cloisite 30B and Ag-Ion. SEM micrographs showed that in all the nanocomposite films, except the Nanosilver-incorporated one, nanoparticles were dispersed homogeneously throughout the chitosan polymer matrix. Consequently, mechanical and barrier properties of chitosan films were affected through intercalation of nanoparticles, i.e., tensile strength (TS) increased by 7-16%, while water vapor permeability (WVP) decreased by 25-30% depending on the nanoparticle material tested. In addition, chitosan-based nanocomposite films, especially silver-containing ones, showed a promising range of antimicrobial activity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.54.2-54.2
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• 2012

Solid-state dewetting of thin films is a process through which continuous solid films decay to form islands. Dewetting of thin films has long been a critical issue in microelectronics and much effort has been made to prevent the process and enhance the stability of films. On the other hand, dewetting has also been purposely induced to create arrays of particles and other structures for applications, including plasmonic structures and catalysts for growing nanotube and nanowire. We have investigated ways of producing regular structures via templated dewetting of thin films. Mainly, two different approaches have been used in our works to template dewetting of thin films: periodic topographical templating and planar patterning of epitaxially-grown films. Dewetting of topographically-patterned thin films results in the formation of nanoparticle arrays with spatial and crystallographic orders. Morphological evolution during templated-dewetting of single crystal films occurs in deterministic ways because of geometric and crystallographic constraints, and leads to the formation of regular structures with smaller sizes and more complex shapes than the initial patches. These results will be reviewed in this presentation.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.512-518
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• 1996

Amorphous carbon nitride (a-C:N) multilayerfilms are formed by using altermating conditions during film deposition in are ion plating process. Because hard a-C:N films prepared with suitable megative bias voltages have large compressive stress, it is difficult to increase film thickness more than 200nm. Preparing multilayer films composed of hard layers and soft layers, we can grow thick multilayer films on Si and SKH steel substrate. The total thickness of multilayer films is more than 1$\mu\textrm{m}$. The multilayer films are several times thicker than the single layer films and almost equal in hardness and internal stress to the single layer ones. X-ray photoelectron spectroscopy(XPS) and Raman spectroscopy reveal that multilayer films equal to single layer films in structure, which is similar to the structure of DLC films.