• Journal of Electrochemical Science and Technology
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• v.4 no.3
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• pp.108-112
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• 2013

Lithium diffusivity of the silicon (Si)-based materials of Si-Cu and $SiO_x$ (x = 0.4, 0.85) with improved interfacial stability to electrolyte have been determined, using variable rate cyclic voltammetry with film model electrodes. Lithium diffusivity is found to depend on the intrinsic properties of anode material and electrolyte; the fraction of oxygen for $SiO_x$ (x = 0.4, 0.85), which is directly related to electrical conductivity, and the electrolyte type with different ionic conductivity and viscosity, carbonate-based liquid electrolyte or ionic liquid-based electrolyte, affect the lithium diffusivity.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.3
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• pp.1-5
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• 2000

A waveguide of coupled optical modulator was fabricated on LiNbO$_3$ based on proton exchange with self-aligned thin film electrode method. The electrode pattern was designed using a self-aligned method. After proton exchange process, the waveguide was prepared by annealing process. The initial crossover state of the fabricated 2$\times$2 coupled optical modulator was observed with controlling the annealing process variables and the structure of self-aligned thin film electrodes. It was shown form the present work that the measured crosstalk is -29.5[dB] and 8.0[V] of detected modulating voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.271-272
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• 2008

We fabricated a pentacene thin-film transistor with Ni/Ag source/drain electrodes. Also, we obtained similar electrical characteristics as compared with source/drain electrode with Au. This device was found to have a field-effect mobility of about 0.021 $cm^2$/Vs, a threshold voltage of -5, -7 V, an subthreshold slope of 2.0, 4.5 V/decade, and an on!off current ratio of $3.6\times10^5$, $2.0\times10^6$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.593-596
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• 2007

A possibility of manufacturing bendable ac-PDP using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-PDPs using those material system and are expected to expand the applications of plasma display panels.

• Solar Energy
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• v.9 no.1
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• pp.14-21
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• 1989

Preparation of $TiO_2$ Film by the Dip-coating Method and its Application to photo-electrochemical Electrodes. $TiO_2$ film of n-type semiconductor has been of great interest as a material for solar energy conversion. For its practical application, the dip-coating method has been applied to prepare $TiO_2$ (anatase) film on the nesa glass substrate. Films up to about $1.8{\mu}m$ in thickness can be obtained by repeating the operation, dipping $\to$ pulling up $\to$ drying $\to$ heating at $500^{\circ}C$ for 10 minute. Heating temperature at $500^{\circ}C$ was adopted to convert $TiO_2$ gels into $TiO_2$ crystalline films. The $TiO_2$ films showed the maximum photocurrent ($14mA/cm^2$) at the film thickness of about $1.8{\mu}m$. It was also found that the additional heating at $500^{\circ}C$ for about 20 minutes improved remarkably the photo current of the $TiO_2$ films.

• 한국전기화학회:학술대회논문집
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• 2002.11a
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• pp.57-65
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• 2002

The presence of tetragonal phase at the surface of $LiMn_2O_4$ pinicle due to a Jahn-Teller offset was previously reported to be one of the causes for capacity fading observed during cycling of $Li//Li_xMn_2O_4$ in 4V range. Further, it is reported that a Jahn-Teller effect in 4V range may be suppressed by substitution of Mn ions with Li ions or other transition metal ions. However, the direct evidence of the suppression of a Jahn-Teller effect in 4V range by substitution of Mn ions with other metal ions has not been reported. The dissolution and formation of surface film at the surface of $LiMn_2O_4$ electrodes also reportedly affect the capacity fading or rate capability. This study reports on the evidence of the onset and suppression of a Jahn-Teller effect in 4V range and the dissolution and formation of surface film at the surface of $LiMn_2O_4$ thin film electrodes using in situ bending beam method (BBM) in situ electrochemical quartz crystal microbalance (EQCM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Journal of the Korean Electrochemical Society
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• v.7 no.4
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• pp.167-172
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• 2004

3,4-dihydroxybenzaldehyde(3,4-DHB) was oxidatively el electropolymerized on glassy carbon (GC) electrodes to prepare CC/p-3,4-DHB type electrodes, which were subsequently modified with 3,4-dihydroxybenzoic acid(3,4-DHBA) using 0.05M HCI as a catalyst. The esterification reactions were performed between -OH sites on the polymeric film surface of the p-3,4-DHB and the -COOH sites within the 3,4-DHBA molecules in solution. These reactions had a rate constant value of $1.1\times10^{-1}\;s^{-1}$ for the esterification step as obtained from the first-order rate constant in the solution. The electrochemical responses of the GC/p-3,4-DHB-3,4-DHBA electrodes exert an influence upon the buffer solution, its pH and applied potential ranges. The redox process of the electrode was more easily controlled by charge transfer kinetics than that of the CC/p-3,4-DHB. The modified electrodes had redox active sites that were 10 times more active than those present before modification. The electrical admittance of the modified electrodes was also three times higher than that of the unmodified electrodes. After being annealed in ethanol for 20 hrs the electrodes brought about a 3.3 times greater change of water molecules in the redox reaction. The modified electrodes are stable in the potential range of 0.4 to 0.55V.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2000.02a
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• pp.139-142
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• 2000

We fabricated resistive superconducting fault current limiters based on $YBa_{2}Cu_{3}O_{7}$ thin films and investigated position dependence of quench progress. The $YBa_{2}Cu_{3}O_{7}$ film was coated insitu with a gold layer and patterned into 1 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents. Quench progress depended significantly on the position in the limiter with respect to electrodes. The limiters quenched fastest at the part farthest from the electrodes. the limiters quenched fastest at the part farthest from the electrodes and slowest next to the electrodes. This phenomenon was more prominent near the minimum quench current. At high fault current the quench started simultaneously on all parts of the limiters and the subsequent progress of quench depended only weakly on the position. The heat transfer from limiter meander lines to electrodes explains these results.

• Current Optics and Photonics
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• v.1 no.1
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• pp.45-50
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• 2017

Optical instruments based on polymer-dispersed liquid crystal (PDLC) have been used to inspect transparent electrodes. Generally the operating voltage of an inspection instrument using PDLC is very high, over 300 V, reducing its lifetime and reliability. The operating-voltage issue becomes more serious in the inspection of touch-screen panel (TSP) electrodes, due to the bezel structure protruding over the electrodes. We have theoretically calculated the parameters affecting the operating voltage as a function of the distance between the TSP and the PDLC, the thickness, and the dielectric constant of the sublayers when the inspection module was away from the TSP electrodes. We have experimentally verified the results, and have proposed a way to reduce the operating voltage by substituting a plastic substrate film with a hard coating layer of smaller thickness and higher dielectric constant.