• Solar Energy
• /
• v.17 no.4
• /
• pp.3-11
• /
• 1997

Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

• Food Science and Preservation
• /
• v.13 no.1
• /
• pp.8-12
• /
• 2006

The effects of packaging treatments with either low density polyethylene (LDPE) or polypropylene (PP) films on the quality of leaf lettuce were evaluated. It was also stored within a plastic bag (LDPE and PP films) with 4 pelf orated holes (6mm diameter). Changes in weight loss, color difference, anthocyanin, chlorophyll, water content, and general appearance (shape of lettuce) ware investigated Total weight of leaf lettuce packaged within non-pelf orated films decreased slowly over the storage periods at 5 and $20^{\circ}C$. The weight loss of leaf lettuce showed no significant difference between non-pelf orated and perforated films at $20^{\circ}C$. General appearance in leaf lettuce stored at $20^{\circ}C$ was not significantly affected by packaging treatments with LDPE and PP films. The shelf life of non-packaged leaf lettuce at $5^{\circ}C$ was 8 days, whereas packaging treatments with LDPE and PP films showed freshness in leaf lettuce for 30 days of storage. Total chlorophyll and water contents of leaf lettuce packaged within pelf orated and non-pelf orated films decreased gradually during storage. However, no remarkable changes in color difference, levels of chlorophyll and anthocyanin, and water contents were observed in leaf lettuce packaged within perforated and non-pelf orated films. In this experiment, leaf lettuce packaged within LDPE or PP films without any punching holes at $5^{\circ}C$ was the most desirable for extending the quality. These results suggest that non-pelf orated packaging treatment in combination with low storage temperature could be effective in prolonging the shelf life of leaf lettuce

• Food Science and Preservation
• /
• v.16 no.5
• /
• pp.644-649
• /
• 2009

We investigated quality changes in Setoka ([Citrus unshiu$\times$Citrus sinensis]$\times$Citrus reticulate]$\times$[Citrus reticulata$\times$Citrus sinensis]) wrapped in 30-m pore size low-density polyethylene film (LDPE) and stored at different temperatures. LDPE wrapping effectively inhibited weight loss, and fruits seemed fresh even after room temperature storage. The decay rate was higher at room temperature and with LDPE wrapping. The respiration rate of LDPE- wrapped fruits was somewhat higher than that of control samples. Thus, no modified atmosphere packaging (MAP) effect was observed when 'Setoka' citrus was studied. Acidity decreased at a constant but different rate with each storage method used, and these rates were correlated with respiration rates. Soluble solid content (SSC), however, increased during 45 days of storage a subsequent rapid decrease was then observed.

• Korean Journal of Food Science and Technology
• /
• v.36 no.2
• /
• pp.239-245
• /
• 2004

Storage quality of minimally processed onion as influenced by hot-water dipping was investigated to examine feasibility of mild heat treatment as efficient post-processing method. fresh onions were peeled, trimmed, and dipped in hot water at various temperatures ($50-80^{\circ}C$) for 1 min. Heat-treated onions were cooled, de-watered, packaged in low density polyethylene (LDPE) film pouches ($63\;{\mu}m\;thickness$), and stored at $10^{\circ}C$. Samples treated at higher temperatures ($70-80^{\circ}C$) showed significant increases in flesh weight loss and discoloration during storage as compared to others. Hot-water dipping remarkably reduced initial microbial load of prepeeled onions, with over 1 log cycle decrease in aerobic bacterial count. After 7 days storage, no significant differences in viable aerobe count were observed among treated and untreated samples, with both showing $10^{6}-10^{7}\;CFU/g$. For sensory attributes including discoloration, wilting, decay, and visual quality, onions treated with hot-water dipping at $60^{\circ}C$ scored highest. Results suggested hot-water dipping at specific condition as practical post-processing treatment could effectively prolong shelf life of minimally processed onion.

• Korean Journal of Materials Research
• /
• v.11 no.3
• /
• pp.197-202
• /
• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Korean Journal of Materials Research
• /
• v.10 no.4
• /
• pp.282-289
• /
• 2000

$PbTiO_3$ films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition(ECR-PECVD). Deposition characteristics of $PbTiO_3$films on $RuO_2$ and Pt substrates were investigated with varying the flow rate of metalorganic source and substrate temperature. The residence time of Pb-oxide molecules in much longer on $RuO_2$ than on Pt substrate, while the perovskite nucleation is more difficult on $RuO_2$ than on Pt substrate. Therefore, the process conditions to obtain the single perovskite $PbTiO_3$ phase are more restricted on $RuO_2$ than on Pt substrates. An introduction of Ti-oxide seed layer increases perovskite nucleation density and thus enlarges the process window to obtain the single perovkite phase. The introduction of Ti-oxide seed layer make the PZT film that Ti-components of $PbTiO_3$ are partially substituted with Zr atoms have single perovskite phase for the wide range of Zr/(Zr+Ti) concentration ratios.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.35 no.1
• /
• pp.121-125
• /
• 2006

To study the effects of plasticizer concentration and its ratio on the physical properties of silk fibroin films, polyethylene glycol (PEG) was used at 4 different concentrations; 1, 2, 3, $4.5\%$ (w/v). Tensile strength (TS) and water vapor permeability (WVP) increased with the increase of PEG concentration, while opposite trend was observed for percent elongation of silk fibroin films. WVP of silk fibroin films increased from $2.54\;ng{\cdot}m/m^2spa$ for $1\%$ of PEG to $5.41\;ng{\cdot}m/m^2sPa$ for $4.5\%$. In addition, a mixture of PEG and glycerol (Gly) as a plasticizer was used at the ratio of 100:0, 75:25, 50:50, 25:75, and 0:100 (w/w). Percent elongation of the films was improved to $130.95\%$ when the ratio of 75:25 was used. On the contrary, WVP of silk fibroin films increased with the decrease of the ratio of PEG:Gly. Effect of the plasticizer concentration and its ratio on the color of silk fibroin films was negligible. These results suggest that mixture of PEG and Gly as a plasticizer provide more flexible than PEG alone in silk fibroin films, and the best ratio of PEG to Gly was 75:25.

• Journal of Sensor Science and Technology
• /
• v.24 no.6
• /
• pp.404-411
• /
• 2015

A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.3-10
• /
• 1993

Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure whose lattice constants $a_{o}$ and $c_{o}$ were $4.1364{\AA}$ and $6.7129{\AA}$, respectively. Its grain size was about $0.35{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility defending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150k and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
• /
• v.2 no.1
• /
• pp.81-86
• /
• 1993

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_{2}$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_{o}$ and $c_{o}$ were $4.302{\AA}$ and $7.014{\AA}$, respectively. Its grain size was about $0.3{\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (${\gamma}$), maximum allowable power dissipation and response time on these samples.