• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.789-791
• /
• 1998

Numerical simulation has been performed on a microtip field emitter structure produced by employing a CMP technology. The field distributions are estimated by using a Maxwell 2D vector simulator and the electron trajectories are obtained by solving the equation of ballistic motion of emitted electrons. The beam width observed at the phosphor has been characterized as a function of the applied voltages and the gate-to-tip distance. It has also been investigated how the electron trajectory is changed by adopting the anode switching as well as the focus electrode.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.1530-1533
• /
• 2005

We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1318-1320
• /
• 1998

We have investigated the electrical characteristics of a MOSFET-structured silicon field emitter by employing Maxwell 2D and Silvaco simulators. The potential distribution is obtained by Maxwell 2D simulator and the field emission current is calculated by Fowler-Nordheim equations. The characteristics of MOSFET is simulated by Silvaco simulator. Simulated results are almost identical to the experimental results. Also, we have studied the emission characteristics as funtions of several geometric parameters.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.30-32
• /
• 1999

Electron beam trajectory simulation results on the high voltage FED with cone-type field emitters predict that the cross-talk phenomena would be seen due to the divergence of the electron beam. In this study, computer simulations with design of experiment technique and the SNU-FEAT program were carried out for five input parameters of the aperture focusing structure. The results tell that the focusing voltage is a dominant factor. And, the beam divergence index could be reduced to 10.7$\mu\textrm{m}$ with the aperture focusing structure, however, the operating voltage of the field emitter is predicted to increase by 40% maximum.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.53-54
• /
• 2000

Measurements of the direct current resistivity, on multiwalled carbon nanotubes(MWNT) for field electron emitter source that had been screen printed in a thick film form were made as a function of temperature T in the range of 1.7K-390K. In this measuring temperature range, the electrical resistivity for the MWNT show that the main contribution to the conductivity comes form carries that hop directly between localized states executing variable range hopping processes. This thick-film form system for large area display showed a high bright light emission as well as very low turn-on field as like an individual MWNT system at room temperature. Furthermore, the electron emission characteristics followed well typical Fowler-Nordheim conduction under the vacuum.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.2
• /
• pp.115-119
• /
• 2011

A tip-type carbon nanotube(CNT)-based field emitter was studied to consider it as electron source for micro-focused x-ray tube. The CNT was grown directly on a metal (tungsten) substrate by using an inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Prior to CNT growth, the metal substrate was etched to have various tip angles from $10^{\circ}$ to $180^{\circ}C$ (flat-type). The morphologies and microstructures of all the grown CNTs were analyzed via field-emission SEM. Furthermore, the effects of substrate tip-angles on the emission properties of CNT-based field emitters were characterized to estimate the maximum current density, the turn-on voltage, and the spatial distribution of electron beams. Prolonged long-term stability testing of the CNT emitters was also performed. All the experiment results obtained from this study indicated why a tip-type CNT emitter, compared with a flat-type CNT emitter, would be more desirable for a micro-focused x-ray system, in terms of the emission current level, the focused beam area, and the emission stability.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.14 no.1
• /
• pp.31-37
• /
• 2009

Hybrid ballast for field emission lamp with CNT (carbon nano tube) emitter is proposed. Hybrid ballast consists of a high voltage dc part and hi-polar pulse generation part. Field emission lamp with CNT lamp is composed of three electrodes (anode, gate, and cathode). High voltage dc part is for anode and gate and hi-polar pulse generation part is for gate and cathode in CNT triode respectively. The experimental results demonstrate that the proposed topology is good for driving CNT lamp. To protect the lamp and ballast, OCP (Over Current Protection), OVP (Over Voltage Protection), and OTP (Over Temperature Protection) are added and the experimental results demonstrate that the proposed method is good for driving field emission lamp with CNT emitter.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.07a
• /
• pp.89-90
• /
• 1997

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2000.11a
• /
• pp.85-85
• /
• 2000

• Laser Solutions
• /
• v.14 no.3
• /
• pp.1-6
• /
• 2011

Globally, the interest of renewable energy has become an upsurge. Especially, the solar industry is the one which is getting rapid growth rate. Many of researchers have been undertaking to improve the efficiency of solar cell to accomplish grid parity. The most of research has been concentrated on two methods, one on the selective emitter and the other is on LBSF (Local Back Surface Field) formation. Laser patterning will be needed to eliminate the thin film to form selective emitter and LBSF of solar cell. This paper reports some experimental results in laser patterning process for high-efficiency crystalline solar cell manufacturing. The experimental results indicate that the patterning quality depends on the average power and repetition rate of laser. The experimental results prove that the laser patterning process is an advantageous method to improve the efficiency of solar cell.