• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.891-899
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• 1996

A model for predicting the characteristics of elastic ferromagnetic materials having a moving gap was presented. Based on the model parameters concerning behavior of material, such as the instantaneous field intensity, attractive force between the poles, length of gap, and the induced current/ emf in the circuit can be determined from the numerical integrations of the governing equations derived. From the results of the model it is found that when dc emf is imposed on the circuit the current sharply rise and fall for very short duration then stabilize at extremely low level which depends mainly on elasticity, permeabilities and ratio of resistivity. Subsequently output emf is shown stabilized at constant value which depends on the previous parameters as well as the resistivity ratio of primary to secondary circuit after sufficient progress of time.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.109-109
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• 2003

III- V ferromagnetic semiconductor has attracted great attention as a potential application for spintronics due to a successful demonstration of spin injection from ferromagnetic GaNnAs into semiconductor. GaMnN may be one of the possible candidates for room temperature operation. Samples were grown on sapphire (0001) substrate at $650^{\circ}C$ via molecular beam epitaxy with a single Precursor of (Et$_2$Ga(N$_3$)NH$_2$$CH_3$) and solid source of Mn at different Mn source temperature. The background pressure is low 10$^{-10}$ Torr and the samples growth pressure was 1.4 $\times$ 10$^{-6}$ Torr.

• 한국자기학회지
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• 제22권2호
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• pp.66-72
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• 2012

강자성 초전도체의 발견은 상극으로 알려진 강자성과 초전도성이 어떻게 상호작용하여 조화롭게 공존하는지에 대한 학문적인 연구뿐만 아니라 새로운 기술적인 응용을 위한 광범위한 탐구를 이끌고 있다. 본 해설논문에서는 강자성 초전도체에 대한 이해를 돕기 위하여, 먼저 초전도체의 쿠퍼쌍을 깨뜨리는 강한 자기장의 궤도 효과와 상자성 효과에 대하여 설명한다. 자기장의 이러한 효과 이외에도 초전도체/강자성체 복합 구조의 계면에서 발생하는 근접 효과에 의해 단일상 쿠퍼쌍은 강자성체를 지나가는 동안 불안정하여 아주 짧은 침투깊이를 가진다. 그러나 쿠퍼쌍이 홀-진동수 삼중상인 경우 안정되고 긴 유효길이를 가지게 되는데, 새로운 스핀 전자소자로서의 개발을 위해 그 연구의 중요성이 높아지고 있다. 마지막으로 다양한 강자성 초전도체와 양자구속효과에 의해 두 성질이 공존하는 저차원의 물질들을 소개한다.

• Journal of Acupuncture Research
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• 제31권2호
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• pp.21-30
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• 2014

Objectives : Manufacturing and manipulation techniques of acupuncture can be interpreted as an induced electromagnetic viewpoint, as proposed in previous study. Considering from this point of view, the magnetization of needles should be essential to enhance the electromagnetic effects during the behavior of the acupuncture needling. Methods : The current disposable needles are made of non-magnetic stainless steels, so ferromagnetic materials were searched as suitable substitutes. Meanwhile, at the practical view, stainless steels are very available for the several superior properties like as corrosion resistance, strength, etc., magnetic stainless steels were first investigated. Some types of them still preserved the ferromagnetic properties of iron, so trial needles were made with them. And then magnetization of them were followed. Results : Among the hundreds types of stainless steels, martensitic or ferritic ones are ferromagnetic. The needles made with these ferromagnetic wires were magnetized, and polarized by magnetizer, and their magnetic properties were improved. Moreover, in addition to the superiority of the magnetism, the electrical and thermal conductivities of them were even better than those of the current austenitic stainless steels. Conclusions : Through the developmental study based on the electromagnetic viewpoint, the magnetized and polarized acupuncture needles were completed. This means that these needles having improved magnetism can be used to improve the electromagnetic needling effects, and moreover, their superiorities in the electrical and thermal conductivities can also give another benefits in treatments of electrical or warm needling.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.262-262
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• 2003

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

• Journal of Magnetics
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• 제6권3호
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• pp.94-100
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• 2001

Fe-Co-Ni particles with an average size of 45 and 135 nm are characterized in terms of magnetic phase transformation and magnetic properties at room temperature. BCC structure of Fe-Co-Ni spherical particles can be synthesized from Fe-Co-Ni-Al-Cu precursor films by heating at 600-80$0^{\circ}C$ for the phase separation of Fe-Co rich Fe-Co-Ni particles, followed by a post heating at $600^{\circ}C$ for 5 hours. The average size of nanoparticles was directly determined by the thickness of precursor films. Exchange interactive hysteresis was observed for the nano-composite (Fe-Co-Ni)+(Fe-Ni-Al) films resulting from the short exchange interface between ferromagnetic Fe-Co-Ni particles surrounded by almost papramagnetic Ni-Al-Fe matrix. Arraying the isolated Fe-Co-Ni nano-particles in a random arrangement on $Al_2O_3$substrate the particle assembly showed a behavior of dipole interactive ferromagnetic clusters depending on their volume and inter-particle distance.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.17-17
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• 2003

Semiconductors with ferromagnetism at room temperature has been actively searched for in recent years; a prospect of devices using both charge and spin continuously gives impetus to the activities. Transition metal doped oxide materials have been of particular interest. Co substituted ZnO [1] and TiO$_2$ [2] thin films, for example, were reported to show ferromagnetic properties at room temperature. However, various studies do not seem to converge on a definite picture [3,4,5]. The issue is rather fundamental: whether a system shows ferromagnetic properties at all, and in case it does, whether the system possesses a close coupling between magnetism and transport properties. In this talk, we shall assess the current status of transition metal doped oxide materials as room temperature ferromagnetic semiconductors.

• Journal of Magnetics
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• 제17권4호
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• pp.245-250
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• 2012

Ferromagnetic resonance and X-ray specular reflectivity measurements were performed on $Ni_{81}Fe_{19}/Ir_{20}Mn_{80}/Co_{90}Fe_{10}$ exchange bias trilayers, which were grown using the pulsed-DC magnetron sputtering technique on Si(100)/$SiO_2$(1000 nm) substrates, to investigate the evolution of the interface roughness and exchange bias and their dependence on the NiFe layer thickness. The interface roughness values of the samples decrease with increasing NiFe thickness. The in-plane ferromagnetic resonance measurements indicate that the exchange bias field and the peak-to-peak line widths of the resonance curves are inversely proportional to the NiFe thickness. Furthermore, both the exchange bias field and the interface roughness show almost the same dependence on the NiFe layer thickness. The out-of plane angular dependent measurements indicate that the exchange bias arises predominantly from a variation of exchange anisotropy due to changes in interfacial structure. The correlation between the exchange bias and the interface roughness is discussed.

• 한국자기공명학회논문지
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• 제7권2호
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• pp.80-88
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• 2003

We have performed $^{11}$ B nuclear magnetic resonance (NMR) measurements to microscopically investigate an electronic structure of the ferromagnetic state in three different compositions of calcium-hexaboride single crystals. Although the crystal structure of Ca $B_{6}$ is cubic and three NMR lines may be expected for the nuclear spin 3/2 of $_{11}$ B, a larger number of NMR resonance peaks have been observed. The frequency and intensity of those peaks distinctively changes depending on the angle between crystalline axis and magnetic field. Analyzing this behavior, we find that the electric field gradient(EFG) tensor at the boron has its principal axis perpendicular to the six cubic faces with a quadrupole resonance frequency $v_{Q}$ 600 kHz. Even though the magnetization data highlight the ferromagnetic hysteresis, $^{11}$ B NMR linewidth data show no clear microscopic evidence of the ferromagnetic state in three different compositions of Ca $B_{6}$ single crystals.s.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.