• Journal of information and communication convergence engineering
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• v.2 no.2
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• pp.93-96
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• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.392-396
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• 1987

Pure barium titanate was sintered at $1340^{\circ}C$ for 2, 4, 8, 16 hr to control their grain size. The measurements of breakdown strength and partial discharge characteristics were performed under rising AC voltage(60Hz). With increase of sintering time, the average grain size was increased and breakdown strength was slightly decreased. Partial discharge in pores was observed under high voltage, and a model of dielectric break down in barium titanate ceramics is proposed.

• Korean Journal of Crystallography
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• v.12 no.1
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• pp.14-19
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• 2001

Effects of electric-field-induced lattice distortion on the polarization and strain were investigated in Pb(Mg/sub 1/3/Nb/sub 2/3)O₃ relaxor ferroelectric ceramics in the temperature range of -50℃∼90℃. The ratio of residual strain and polarization (S/sub r//P/sub r/ rarely depends on the temperature. However, the ratio of the electric field included strain and polarization (S/sub induced//P/sub induced/) increased as the temperature decreases below phase transition temperature. To explain these experimental results, a simple rigid ion model concentrating on only Bo/sub 6/ octahedron was suggested.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.134-134
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.133.3-133
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• 1998

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.10
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• pp.1408-1412
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• 2013

High power pulse generating technology is to accumulate the energy for relatively long and then to create a strong force by emitting the energy very fast. High power pulse generating technology has recently been using in various fields like environments, industry, research, military and so on. Numerous studies about high power pulse generators have already been performed and commercialized in various conditions. However, in aspect of their size and weight, it is hard to carry the generators which currently have been developed. For these reasons, din nations like America or Russia, the researches have been performed for Ferroelectric Generators(FEG), which have relatively simple structure and are economical. To realize the ferroelectric generator, in this study, we selected the PZTs which have different physical properties respectively, and then shocked them using explosives. The PZT samples with volumes of $0.31{\sim}0.94cm^3$ were depolarized by shocked and produced the waveform that have peak voltages of 4.28 ~ 15kV. The lowest relative permittivity sample generated much higher peak voltage. And sudden voltage drops which seem to be caused by dielectric breakdown were observed in some experiments using low young's modulus samples. Also, increase in thickness led to increase in peak voltage, but the ratio of the voltage rise did not reach the ration of the thickness increase.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.846-849
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• 2003

Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2＋}$, $Pb^{2＋}$,$ Ca^{2＋}$ , $Bi^{3＋}$ , $La^{3＋}$ , $Ti^{4＋}$ , $Mo^{6＋}$ , and $W^{6＋}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2＋}$ , $Ba^{2＋}$ , $La^{3＋}$ doping, but the transition temperature increased with $Ca^{2＋}$ , $Bi^{3＋}$ , $Ti^{4＋}$, $Mo^{6＋}$ , or$ W^{6＋}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.148-155
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• 2008

Dielectric and pyroelectric properties of relaxor ferroelectric in the PMN-PT solid solution series have been investigated. Features of the diffuse phase transition in PMN-PT system, typical relaxor ferroelectric materials, were studied as a function of temperature and frequency. The transition temperature of the ceramics with PT$\sim$0.325 did not depend on the measuring frequency. This can best realized in a relatively random environment that apparently is provided by PMN-rich complex perovskites, including those containing Pb. The composition with PT>0.35 show the characteristics of a normal single phase ferroelectric material. Thus the studies revealed that the morphotropic phase boundary in the PMN-PT system is in the vicinity of PT$\sim$0.3 and it has a small curvature and as a result the compositions near the morphotropic phase boundary show two phase transitions, rhombohedral$\rightarrow$tetragonal$\rightarrow$cubic, when the samples are heated up to higher temperature. The best optimum compositions are observed near the morphotropic phase boundary.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.498-501
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• 2001

The effects of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$ relaxor ferroelectrics were studied in the ferroelectricity-dominated temperature range from -4$0^{\circ}C$ to 3$0^{\circ}C$. Dielectric, piezoelectric properties and electric-field- induced strain were examined to clarify the effect of MnO$_2$ addition. As the added amount of MnO$_2$ increase. dielectric and piezoelectric properties of Pb(Mg$_{1/3}$ Nb$_{2/3}$O$_3$ became harder. From the experimental results, it was suggested that Mn behaves as a ferroelectric domain pinning element.