• 한국세라믹학회지
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• 제33권8호
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• pp.883-888
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.21.1-21.1
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• 2006

• 한국정보통신학회논문지
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• 제7권4호
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• pp.730-735
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• 2003

본 논문에서는 BSTO 강유전체를 이용한 가변 대역통과필터들을 4가지 유형의 예를 들어 제안한다. 제안 기술에서 인가 전압이 증가할수록 강유전체의 유효 유전율은 비선형적으로 감소하고 따라서 중심 주파수가 높은 쪽으로 이동한다 이 때 사용하는 강유전체로는 STO와 BSTO가 있는데 STO는 100K 이하의 저온에서, BSTO는 실온에서 주로 사용한다. 본 제안 기술은 차세대 무선통신 기술 발전에 매우 유용하게 기여 할 것으로 보인다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.8-11
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• 1997

This study makes SrTiO$_{3}$ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO$_{3}$ and Si/Ti/SrTiO$_{3}$ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption rate, permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the pea\ulcorner of permittivity value of Ti/SrTiO$_{3}$ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory In the nature of permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO$_{3}$ has lower values in reverse bias.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• 한국진공학회지
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• 제17권2호
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• pp.122-129
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• 2008

Perovskite 구조의 PMT-PT계 고용체를 precursor columbite를 이용한 산화물 혼합법으로 제작하여 결정립의 성장과 상전이 현상을 분석하였다. $1250^{\circ}C$에서 4시간 유지하여 제작한 시편의 소결밀도는 이론밀도의 97% 이상이었고, 완전한 perovskite phase를 형성하였다. 치밀하게 소결 처리된 시편의 결정립의 크기는 $6\sim8{\mu}m$로 측정되었다. PMT-PT 고용체계는 복합 강유전 고용체의 전형적인 P-E 이력현상과 강한 진동수 분산특성이 관찰되었다. 특히 PMT가 70% 이하인 조성은 상전이 온도 이상에서도 자발분극이 완전히 소멸하지 않는 relaxor 특성을 보였으며, 유전상수와 유전손실의 큰 진동수 의존성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.323-323
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• 2012

We present ferroelectricity of Bi-doped ZnO film probed by piezoresponse force microscopy (PFM), which is one of the Scanning Probe Microscopy techniques. Perovskite ferroelectrics are limited to integration of devices into semiconductor microcircuitry due to hard adjusting their lattice structure to the semiconductor materials. Transition metal doped ZnO film is one of the candidate materials for replacing the perovskite ferroelectrics. In this study, ferroelectric characteristics of the Bi-doped ZnO grown by pulsed laser deposition were probed by PFM. The polarization switching and patterning of the ZnO films were performed by applying DC bias voltage between the AFM tips and the films with varying voltages and polarity. The PFM contrast before and after patterning showed clearly polarization switching for a specific concentration of Bi atoms. In addition, the patterned regions with nanoscale show clearly the local piezoresponse hysteresis loop. The spontaneous polarization of the ZnO film is estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1317-1319
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• 1997

This paper is to study and develope a measurement apparatus for ferroelectricity. The apparatus consists of wave generation part, high voltage amplifier part, measurement part, data acquisition part and the related controll circuits. Single or double excitation wave is digitalized and sent to the external RAM of wave generation part by personal computer. These datas saved in the RAM are converted to analog excitation wave through D/A converter. The frequency of excitation wave is depend on the read-out speed of the RAM by clock pulse. Such generated wave is applied to high voltage amplifier as a input voltage. The output of high voltage amplifier is applied to ferroelectrics and the response is obtained from the charge amplifier of measurement part. The response is sampled and converted to digital datas through AID converter. These digital datas are automatically saved in the external RAM of acquisition part. The computer takes the digital datas and calculates the electric displacement D, the electric field and the dielectric constant $\varepsilon$. We tested for PZT ceramic sample and could observed the D-E hysteresis lops and ${\varepsilon}_s$-E hysteresis loops with good forms.

• 한국재료학회지
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• 제25권7호
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• pp.317-321
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• 2015

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.