• Title/Summary/Keyword: ferroelectric thin films

Search Result 568, Processing Time 0.033 seconds

Recovery of Etching Damage of Etched PZT Thin Film by Inductively Coupled Plasma (유도결합 플라즈마에 의해 식각된 PZT 박막의 식각 Damage 개선)

  • 강명구;김경태;김창일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.14 no.7
    • /
    • pp.551-556
    • /
    • 2001

  • In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

  • PDF