• Title/Summary/Keyword: ferroelectric thin films

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Ferroelectirc Properties of Eu-doped PZT Thin Films (Eu 첨가에 따른 PZT 박막의 강유전 특성)

  • 김창일;손영훈;김경태;김동표;이병기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.611-615
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    • 2003

  • Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

  • https://doi.org/10.4313/JKEM.2003.16.7.611 인용 PDF KSCI

A Study on the Preparation and Properties of $RuO_2$ Thin Films for Ferroelectric Memory Device Applications (강유전체 메모리 소자 응용을 위한 $RuO_2$ 박막의 제작과 특성에 관한 연구)

  • 강성준;정양희
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.10a
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    • pp.494-498
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    • 2000

  • RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

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