• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.45-45
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• 2002

• Korean Journal of Materials Research
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• v.16 no.6
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• pp.394-399
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• 2006

Ferroelectric $HoMnO_3$ thin films were deposited on the Si(100) substrate at $700^{\circ}C$ for 2 hrs by metalorganic chemical vapor deposition (MOCVD) and post-annealed at 850oC by rapid thermal process (RTP). Electrical properties and crystalline phases of $HoMnO_3$ thin films were investigated as a function of postannealing time. Single phase of hexagonal symmetry with c-axis preferred orientation was obtained from $HoMnO_3$ thin films post-annealed at $850^{\circ}C$ for 5 min, while the c-axis preferred orientation was decreased with the increase of post-annealing time, and the thin films post-annealed at $850^{\circ}C$ for 15 min showed the mixture phases of hexagonal and orthorhombic symmetry. P-E (Polarization-Electric field) hysteresis loop of ferroelectric $HoMnO_3$ thin films was observed only for the single phase of hexagonal symmetry, but that was not observed for the mixture phases of the hexagonal and orthorhombic symmetry, which was discussed with the bond valence of Mn ion of crystalline phase. Leakage current density was dependent on the microstructure of thin films as well as the change of valence of Mn ion.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.10.1-10.1
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• 2011

Energy harvesting technologies converting external sources (such as thermal energy, vibration and mechanical energy from the nature sources of wind, waves or animal movements) into electrical energy is recently a highly demanding issue in the materials science community for making sustainable green environments. In particular, fabrication of usable nanogenerator attract the attention of many researchers because it can scavenge even the biomechanical energy inside the human body (such as heart beat, blood flow, muscle stretching, or eye blinking) by converging harvesting technology with implantable bio-devices. Herein, we describe procedure suitable for generating and printing a lead-free microstructured $BaTiO_3$ thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible $BaTiO_3$ thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of $BaTiO_3$ thin film nanogenerator and the integration of bio-eco-compatible ferroelectric materials may enable innovative opportunities for artificial skin and energy harvesting system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.29.2-29.2
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• 2011

B-site substitution with isovalent and donor impurities was compared in terms of the piezoelectric properties of Bi-based ABO3 perovskite ceramics. X-ray diffraction study revealed that both impurities bring about degradation in their ferroelectric properties as well as piezoelectric characteristics. However, there existed a difference between the isovalent and heterovalent impurities that influence a phase transformation of ferroelectric anisotropic-to-electrostrictive pseudocubic symmetry. Based upon analyses including the crystal, microstructure, dielectric, ferroelectric properties, we believed that A-site vacancies in the ABO3 ceramic significantly contribute to a ferroelectric-nonpolar phase transition, which give rise to lead to a giant strains. The present paper will discuss the origin of giant strains in Bi-based perovskite ceramics.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.273-276
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• 2004

Report ferroelectric memories based on 0.35$\mu\textrm{m}$ CMOS technology ensuring ten-year retention and imprint at 175$^{\circ}C$. This excellent reliability resulted from newly developed BT-based ferroelectric films with superior reliability performance at high temperatures, and also resulted from robust integration schemes free from ferroelectric degradation due to process impurities such as moisture and hydrogen. The superior reliabilities at high temperature of ferroelectric memories using BT-based films are due to the random orientation by special bake treatments.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.431-437
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• 1994

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.683-689
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• 2005

The structural, piezoelectric and ferroelectric properties of $(1-x)(Bi_{0.5}Na_{0.5})TiO_3$ x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) ceramics were investigated. A gradual change in the crystal and microstructures with tile increase of $BaTiO_3$ (BT) concentration was observed. The $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) samples show unusual properties as ferroelectric relaxer materials. We observed a phase transition in BNT solid solutions with BT having normal ferroelectric phase transition. At room temperature, BNT presents a single phase without the morphotropic phase boundary (MPB). In the case of samples doped with $4\~8 mol\%$ BT, rhombohedral-tetragonal MPB was formed and the piezoelectric properties were improved.

• Korean Journal of Materials Research
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• v.25 no.7
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• pp.317-321
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• 2015

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.