• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.88-88
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• 1994

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.56-64
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• 1996

A large amount of papers about the cubic-to-tetragonal phase transition the ferroelectric domain structures of the BaTiO3 were already reported but there exist still some needs to observe the domain behaviors directly. In this study the domain structures of the tinned plates prepared from ta single crystal grown by the TSSG technique were observed using a polarizing microscope TE and X-ray topography. The spatial relation be-tween the orientation states of domains was investigated and the effects of external stresses and electric fields on the behaviors of ferroelectric and ferroelastic domains were studied. All the 90$^{\circ}$walls cut off in the crystal are the wedge shaped lamellar domains and all the straight boundaries in the observed domain patte군 can be interpreted as the head-to-tail 90$^{\circ}$walls. The irregular overlapped boundaries commonly observed by using a polarizing microscope and X-ray topography are complex combinations of well-known 90$^{\circ}$walls and are domain walls were predominant and were stabilized after surface polishing. In the paraelectric phase region the domain walls vanished but the residual surface strain patterns could be seen at the same positions of the stabilized 90$^{\circ}$a-a walls in the tetragonal phase region, These stabilized walls resulted from the surface strain had a memory effect in domain formation during the repeated phase transitions and could notr be affected by an external electtric field.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.307-314
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• 2008

The influence of a moist atmosphere on $90^{\circ}$ domain switching under a sustained electric field, stress corrosion cracking of an indentation crack in water and an aggressive solution, and the relation between penetrating crack propagation and domain switching were studied using $BaTiO_3$ single crystal. The results indicate that enlarging the domain switching zone and crack propagation could be facilitated by a moist atmosphere or an aggressive solution due to the indentation residual stress. A moist atmosphere exerts remarkable influence upon the polarization of $BaTiO_3$ single crystal under a sustained electric field, and the surface energy of the c domain was much lower than that of the a domain. Domain switching ahead of a penetrating indentation crack tip was an essential requirement for crack propagation under constant stress.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.228-234
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• 1996

It is very important to understand the domain structures of ferroelectric BaTiO3 in the poling process. Especially because {111} twinning is frequently observed in most BaTiO3 ceramics it is required to know the relations between the ferroelectric domains and the structural twin. In this study the domain structures of a {111} twinned crystal sample were observed under a polarizing microscope. and the relation between the {111} twin and the domain configurations could be classified into two types of 'V'-shape and linear shape penetrating perpendicular to the twin boundary. Domain formation obeys the symmetry of the {111} twining when a new domain structure is developed by heat treatment and surface deformation due to domain formation is also occured symmetrically between the both sides of the{111} twin boundary. This symmetrical behavior of the domains could be interpreted with the "head-to-tall" orientation of the domains across the {111} twin boundary.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.683-689
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• 2005

The structural, piezoelectric and ferroelectric properties of $(1-x)(Bi_{0.5}Na_{0.5})TiO_3$ x=0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) ceramics were investigated. A gradual change in the crystal and microstructures with tile increase of $BaTiO_3$ (BT) concentration was observed. The $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) samples show unusual properties as ferroelectric relaxer materials. We observed a phase transition in BNT solid solutions with BT having normal ferroelectric phase transition. At room temperature, BNT presents a single phase without the morphotropic phase boundary (MPB). In the case of samples doped with $4\~8 mol\%$ BT, rhombohedral-tetragonal MPB was formed and the piezoelectric properties were improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.35-40
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• 2009

Lead free positive temperature coefficient of resistivity (PTCR) ceramics based on $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ solid solution were prepared by a conventional solid state reaction method. The phase structure was showed single phase with perovskite structure regardless calcinations temperature and $Ba_{1-x}(Bi_{0.5}Na_{0.5})_xTiO_3$ structure was transformed from tetragonal to orthorhombic phase at $x{\geq}0.15$ mole. The XRD peaks with $45^{\circ}{\sim}46^{\circ}$ shifted in right the influence of crystal structure change and the intensity of peak was decreased with additive $(Bi_{0.5}Na_{0.5})TiO_3$. The curie temperature risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but disappeared for $(Bi_{0.5}Na_{0.5})TiO_3$ addition more than 0.15 mole in TMA. In relative permittivity, the curie temperature by the transform of ferroelectric phase risen with additive $(Bi_{0.5}Na_{0.5})TiO_3$ but decreased in relative permittivity. Also, the peak of new curie temperature showed the sample containing $0.025{\sim}0.045$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ near $70^{\circ}C$ caused by phase transform from ferroelectric to ferroelectric and the peak of new curie temperature disappeared at 0.045 mole of $(Bi_{0.5}Na_{0.5})TiO_3$. In our study, it was found that the PTCR in $BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ system was possible for $0{\sim}0.025$ mole of $(Bi_{0.5}Na_{0.5})TiO_3$ and the maximum curie temperature by phase transition showed about at $145^{\circ}C$.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.386-389
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• 2007

The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.654-660
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• 2010

The influences of Na and K content on the crystal phase, the microstructure and the electrical property of $BaTiO_3$-based thermistors was found to show typical PTC effects. The crystal phase of powder calcined at $1000^{\circ}C$ for 4hrs showed a single phase with $BaTiO_3$, and the crystal structure was transformed from tetragonal to cubic phase according to added amounts of Na and K. In XRD results at $43^{\circ}\sim47^{\circ}$, the $(Ba_{0.858}Na_{0.071}K_{0.071})(Ti_{0.9985}Nb_{0.0015})O_{3-\delta}$ showed (002) and (200) peaks but the $(Ba_{0.762}Na_{0.119}K_{0.119})(Ti_{0.9975}Nb_{0.0025})O_{3-\delta}$ showed (002), (020) and (200) peaks. In sintered bodies, those calcined at $600^{\circ}C$ rather than at $1000^{\circ}C$ were dense, and for certain amounts of Na and K showed rapid decreases in grain size. In relative permittivity, the curie temperature due to the transformation of ferroelectric phase rose with added Na and K but decreased in terms of relative permittivity. In the result of the R-T curve, the sintered bodies have curie temperatures of about $140^{\circ}C$ and the resistivity of sintered bodies have scores of $\Omega{\cdot}cm$; the jump order of sintered bodies was shown to be more than $10^4$ in powder calcined at $1000^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.