• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.313-315
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• 1994

In this paper, it is consider spike voltage that is generated by ignoring the recovery time of switching device, turn on and turn off time. In the same principle, this spike voltage will be applicable to diode recovery time. The spike voltage causes to break down insulation of input transformer. So, we will show how to remove spike voltage by optimizing value of R and C and using switching diode which have fast recovery time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.2
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• pp.165-173
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• 2022

The electrification trend of mobility increases every year due to the development of power semiconductor and battery technology. Accordingly, the development and distribution of fast chargers for electric vehicles (EVs) are in demand. In this study, we propose a design and implementation method of an LLC converter for fast chargers. Two 15 kW LLC converters are configured in parallel to have 30 kW rated output power, and the control algorithm and driving sequence are designed accordingly and verified. In addition, the improved power conversion efficiency is confirmed through zero-voltage switching (ZVS) of the LLC converter and reduction of turn-off loss through snubber capacitors. The implemented 30 kW LLC converters show a wide output voltage range of 200-950 V. Experiments applying various load conditions verify the converter performance.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.77-80
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• 2003

Switching Mode Power Supply(SMPS) is widely used in many industrial fields. Power factor improvement and harmonic reduction technique are very important in SMPS. In this paper, we propose the circuit applied Flying Capacitor Snubber for improving power factor of boost converter on fast switching state. Snubber circuit consists of a inductor, two diodes and a capacitor. The losses of switching are reduced by inserting a snubber inductor in the series path of the boost switch and the rectifier diode to control the di/dt rate of the rectifier during it's turn-off. Prior to actual experiment, the circuit analysis Is implemented by PSPICE simulation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2043-2048
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• 2011

High speed drive method for a fuel injector cleaner with current control is presented in this paper. The fuel injector cleaner is used for cleaning the fuel injectors in vehicles when it is clogged with deposit and rust. The fuel injector cleaner cleans the fuel injector by turning on and off the fuel injector rapidly. When the fuel injectors are cleaned, the switching speed is very important. However, when the fuel injector is turned off, the residual current in the fuel injector coil slows down the return action of the plunger in the fuel injector deteriorating performance and speed of the fuel injector cleaner. In this paper, fast turn off operation method of fuel injectors is developed for more effective cleaning. The simulation and experiment results show the validity of the proposed method.

• Journal of IKEEE
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• v.12 no.4
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• pp.255-262
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• 2008

In this paper, we proposed the novel IGBT with an additional n-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed IGBT are caused by an enhanced electron current injection efficiency which is caused by additional n-type MOS structure. In the simulation result, the proposed IGBT has the lower on state voltage of 2.65V and the shorter turn-off time of 4.5us than those of the conventional IGBT(3.33V, 5us).

• Journal of IKEEE
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• v.14 no.1
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• pp.55-64
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• 2010

In this paper, we proposed the novel TIGBT with an additional p-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed TIGBT are caused by an enhanced electron current injection efficiency which is caused by additional p-type MOS structure. In the simulation result, the proposed TIGBT has the lower on state voltage of 1.67V and the shorter turn-off time of 3.1us than those of the conventional TIGBT(2.25V, 3.4us).

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.155-156
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• 2015

Recently, electricity consumption has rapidly increased along with economic growth. The operating strategy using emergency generator is aimed, to resolve a demand response management. For strategy of peak shedding using emergency generator, it is essential to introduce the fast transfer switching device. One of the most effective solutions is to use a static transfer switch (STS) based on thyristor. However, the characteristic of natural commutated SCR thyristor should anticipate short duration voltage sag. STS system thus requires more than a quarter cycle to successfully complete transfer process. This paper proposes the operation scheme of the STS system using the forced-commutation technique to mitigate instantaneous voltage sag during peak transfer process. Proposed STS system improved turn-off characteristic thus accomplishes the peak load shedding satisfied power quality. Performance of the proposed STS system is evaluated using electromagnetic transient program (EMTP) to confirm the effectiveness.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.