• Electrical & Electronic Materials
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• v.9 no.5
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• pp.506-511
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• 1996

This paper deals with an inexpensive, simple and fast Langmuir probe sweeping circuit and its application. This sweeper completes a probe trace in a 1 ms order. Futhermore, the circuit drives a maximum probe voltage of $\pm$30V and has a maximum probe current capability of a few amperes. The plasma parameters are successfully determined using the fast Langmuir probe method.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.145-148
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• 1989

Plasma diagnostics using Langmuir Probe is of wide application because of its simplicity in measurement of electron temperatures and densities. Current methods using simple circuit and analog meters, however, have troubles when they are applied to time-varying or thermal plasmas. To overcome these problems and expand the area of applicability, we have designed fast electronic voltage sweeping circuit in which we can detect digital data. Diagnostics using our digital Langmuir Probe is performed in various kinds of plasmas and the results are shown. Our method can be applied to measuring electron temperature and density of high temperature or time-varying plasmas. And we expect further knowledge of each state of plasma.

• Journal of Astronomy and Space Sciences
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• v.12 no.2
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• pp.234-243
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• 1995

Korea's third rocket, which is currently under development for launch in 1997, is expected to reach as high as 160km and thus, it will provide a good opportunity for the direct measurement of the plasmas in the E-region ionosphere of the Korean peninsula. Langmuir probe techniques, which are the basic tools of the plasma experiment, may yield inaccurate results if they are applied in the conventional form as they are used in the laboratory experiments because of the contamination. In the present paper we study the contamination problem by performing the ground experiments in the vacuum chamber using the contaminated probe. The result show that the contamination effect is reduced when the plasma density is low or when the frequency of the sweep voltage is fast. We propose a modified Langmuir probe based upon our experiments which is suitable for the rocket experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.30-30
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• 2011

The wave-cutoff tool is a new diagnostic method to measure electron density and electron temperature. Most of the plasma diagnostic tools have the disadvantage that their application to processing plasma where toxic and reactive gases are used gives rise to many problems such as contamination, perturbation, precision of measurement, and so on. We can minimize these problems by using the wave-cutoff method. Here, we will present the results obtained through the development of the wave-cutoff diagnostic method. The frequency spectrum characteristics of the wave-cutoff probe will be obtained experimentally and analyzed through the microwave field simulation by using the CST-MW studio simulator. The plasma parameters are measured with the wave-cutoff method in various discharge conditions and its results will be compared with the results of Langmuir probe. Another disadvantage is that other diagnostic methods spend a long time (~ a few seconds) to measure plasma parameters. In this presentation, a fast measurement method will be also introduced. The wave-cutoff probe system consists of two antennas and a network analyzer. The network analyzer provides the transmission spectrum and the reflection spectrum by frequency sweeping. The plasma parameters such as electron density and electron temperature are obtained through these spectra. The frequency sweeping time, the time resolution of the wave-cutoff method, is about 1 second. A short pulse with a broad band spectrum of a few GHz is used with an oscilloscope to acquire the spectra data in a short time. The data acquisition time can be reduced with this method. Here, the plasma parameter measurement methods, Langmuir probe, pulsed wave-cutoff method and frequency sweeping wave-cutoff method, are compared. The measurement results are well matched. The real time resolution is less than 1 ?sec. The pulsed wave-cutoff technique is found to be very useful in the transient plasmas such as pulsed plasma and tokamak edge plasma.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.46-50
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• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• Applied Chemistry for Engineering
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• v.32 no.1
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• pp.49-54
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• 2021

Plasma-polymerized methyl methacrylate (MMA) thin films were synthesized by remote plasma, and effects of plasma power, reaction pressure and direct-indirect plasma on the growth rate and chemical bonding were investigated with alpha-step, FT-IR, XPS and Langmüir probe method. As the plasma power and pressure increased, the tendency of growth rate showed maximum value at a certain range. FT-IR and XPS analyses revealed that composition ratio of C/O and hydrocarbon (C-C) % in the deposited films increased with plasma power, but ester (COO) C % decreased with it. Direct plasma method was effective for fast growth rate, but indirect plasma method was favorable for maintaining the chemical structure of MMA.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.134-141
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• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.133-138
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• 2009

Effects of bipolar pulse driving frequency between 50 kHz and 250 kHz on the discharge shapes were analyzed by measuring plasma characteristics by OES (Optical Emission Spectroscopy) and Langmuir probe. Plasma characteristics were modeled by a simple electric field analysis and fluid plasma modeling. Discharge shapes by a continuous dc and bipolar pulsed dc were different as a dome-type and a vertical column-type at the cathode. From OES, the intensity of 811.5 nm wavelength, the one of the main peaks of Ar, decreased to about 43% from a continuous dc to 100 kHz. For increasing from 100 kHz to 250 kHz, the intensity of 811.5 nm wavelength also decreased by 46%. The electron density decreased by 74% and the electron temperature increased by 36% at the specific position due to the smaller and denser discharge shape for increasing pulse frequency. Through the numerical analysis, the negative glow shape of a continuous dc were similar to the electric potential distribution by FEM (Finite Element Method). For the bipolar pulsed dc, we found that the electron temperature increased to maximum 10 eV due to the voltage spikes by the fast electron acceleration generated in pre-sheath. This may induce the electrons and ions from plasma to increase the energetic substrate bombardment for the dense thin film growth.