• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1301-1303
• /
• 1997

This study was performed to investigate the deposition mechanism of $SiO_2$ by ArF excimer Laser(193nm) CVD with $Si_2H_6$ and $N_2O$ gas mixture and evaluate Laser CVD quantitatively by modeling. In this study, new model of $SiO_2$ deposition process by Laser CVD is introduced and deposition rates are simulated by computer with the basis on this modeling. And simulation results are compared with experimental results measured at various conditions such as reaction gas ratio, chamber pressure, substrate temperature and laser beam intensity.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.387-390
• /
• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 하계학술대회 논문집 C
• /
• pp.1598-1600
• /
• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• 열처리공학회지
• /
• 제13권5호
• /
• pp.318-323
• /
• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.102.1-102.1
• /
• 2010

고효율 멀티정션박막태양전지의 바텀셀 적용을 목적으로, 반응성CVD(Reactive thermal CVD)기술을 이용, $Si_2H_6+GeF_4$를 원료가스로, 이들이 가진 산화환원반응을 이용하여 400도 이하의 저온에서 Ge 및 Si 기판에 Ge을 에피성장 시켰다. Ge 기판위의 호모에피막의 경우, $2.5{\AA}/sec$의 성장속도와 99%의 Ge조성을 보였고, RHEED 및 HR-XRD를 통한 결정성 평가 결과, 고품질의 Ge 에피막의 성장이 확인되었다. 동일한 성장조건을 Si기판에 헤테로에피성장 시켰을 경우, 4% 격자불일치에 의해 막품질이 저하되는 것을 확인하였다. 이를 개선하기 위하여 저온에서 제작한 버퍼층에 대한 논의를 하고자 한다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2002년도 제22회 학술발표회 초록집
• /
• pp.129-129
• /
• 2002

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1991년도 하계학술대회 논문집
• /
• pp.155-157
• /
• 1991

This paper describe a Laser CVD technology which realizes planarized interlevel dielectrics in sub-micron VLSI's. This technology comprises sub-micron gap filling with $SiO_2$ films between metal lines. Laser CVD process conditions have been investigated to improve step coverage of interlevel dielectrics. An ArF(193nm) Excimer Laser was used to excite and dissociate gas phase $SiH_4\;and\;N_2O$ molecules. The Laser CVD by $N_2O\;and \;SiH_4$. mixture gases has realized conformal deposition above the temperature of $300^{\circ}C$, as a result sub-micron gaps were buried with $SiO_2$ films.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1149-1151
• /
• 1995

In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

• 한국세라믹학회지
• /
• 제37권2호
• /
• pp.194-200
• /
• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• 한국재료학회지
• /
• 제8권10호
• /
• pp.945-949
• /
• 1998

Ta(OC2H5)5와 NH3를 이용하여 Cycle-CVD법으로 산화탄탈륨 막을 증착하였다. Cycle-CVD법에서는 Ta(OC2H5)5와 NH3사이에 불활성 기체를 주입한다. 하나의 cycle은 Ta(OC2H5)5주입, Ar주입, NH3 주입, Ar 주입의 네 단계로 이루어진다. Cycle-CVD법으로 산화탄탈륨 막을 증착할 때, 온도 $250-280^{\circ}C$에서 박막의 증착 기구는 원자층 증착(Atomic Layer Deposition:ALD)이었다. $265^{\circ}C$에서 Ta(OC2H5)5:Ar:NH3:Ar:NH3:Ar의 한 cycle에서 각 단계의 주입 시간을 1-60초:5초:5초:5초로 Ta(OC2H5)5 주입 시간을 변화시키면서 산화탄탈륨 막을 Cycle-CVD법으로 증착하였다. Ta(OC2H5)5주입시간이 증가하여도 cycle 당 두께가 $1.5\AA$/cycle로 일정하였다. $265^{\circ}C$에서 증착된 박막의 누설 전류는 2MV/cm에서 2x10-2A/$\textrm{cm}^2$이었고 열처리후의 산화탄탈륨 막의 누설 전류값은 $10-4A\textrm{cm}^2$ 이하고 감소하였다. 증착한 산화탄탈륨 막의 성분을 Auger 전자 분광법으로 분석하였다. 2$65^{\circ}C$에서 증착한 막의 성분은 탄탈륨 33at%, 산소 50at%, 탄소 5at%, 질소 12at% 이었으며 90$0^{\circ}C$, O2300torr에서 10분 동안 열처리한 박막은 탄탈륨 33at%, 산소 60wt%, 탄소 4at%, 질소 3at%이었다. 박막의 열처리 온도가 높을수록 불순물인 탄소와 질소의 박막 내 잔류량이 감소하였다. 열처리 후의 박막은 O/Ta 화학정량비가 증가하였으며 Ta의 4f7/5와 4f 5/2의 결합 강도가 열처리 전 박막보다 증가하였다. 열처리 후 누설 전류가 감소하는 것은 불순물 감소와 화학정량비 개선 및 Ta-O 결합 강도의증가에 의한 것으로 생각된다.