• Title/Summary/Keyword: f-cvd

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Synthesis of Solution-based Sb-doped SnO2 Thin Films

  • Koo, Bon-Ryul;An, Geon-Hyoung;Lee, Yu-jin;Ahn, Hyo-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.367-367
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    • 2014
  • Transparent conductive oxides (TCOs) 박막은 가시광선영역에서의 높은 투과율과 낮은 저항 특성을 동시에 갖고 있어 최근 smart windows, solar cells, liquid crystal displays (LCD), organic light emitting devices (OLED)등과 같은 최첨단 기기에 필수적인 구성요소로 활발히 사용되고 있다. 따라서, 현재까지 FTO ($SnO_2:F$), ITO ($In_2O_3:Sn$), ATO ($SnO_2:Sb$)등과 같은 다양한 TCO들이 많은 연구자들에 의해 연구되고 있다. 그 중 ITO는 우수한 전기적(${\sim}10^{-4}{\Omega}cm$) 및 광학적(~85%) 특성 때문에 현재 상업적으로 활발히 응용되고 있는 대표적인 물질이다. 하지만 ITO의 주된 구성요소인 indium은 제한적인 매장량과 과도한 소비량 때문에 원가가 비싸다는 문제점이 있다. 반면에, ATO는 우수한 전기적(${\sim}10^{-3}{\Omega}cm$) 및 광학적(~80%) 특성뿐만 아니라 구성물질들의 매장량이 풍부하여 ATO의 원가가 저렴하다는 장점을 가지고 있어 현재 ITO을 대체 할 수 물질로 관심 받고 있다 [1]. 지금까지 우수한 특성을 갖는 ATO박막을 합성하는 방법으로 sol-gel spin coating, sputtering, spray pyrolysis, chemical vapor deposition (CVD)등이 알려져 있다. 이 중에서도, sol-gel spin coating과 spray pyrolysis은 solution기반의 합성법으로 분류되며 합성과정이 간단하고 비용이 저렴하다는 장점이 있고 현재까지 많은 연구가 보고되었다. 그러나, 진공기반이 아닌 우수한 특성을 갖는 solution기반의 ATO박막을 합성하기 위해서는 새로운 합성법의 개발이 학문적으로나 산업적으로도 매우 중요한 이슈이다. 따라서, 본 연구에서는 electrospray을 활용하여 solution기반의 ATO박막을 처음으로 합성하였다. 게다가 ATO박막에 열처리온도에 따른 구조, 화학, 전기, 광학적 특성을 확인하기 위하여 X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), transmission electron microscopy (TEM), Hall Effect Measurement System, UV spectrophotometer를 사용하였다. 이러한 실험 결과들을 바탕으로 electrospray을 통해 합성된 solution기반의 ATO박막에 자세한 특성을 본 학회에서 다루도록 하겠다.

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Characterizations on the Thermal Insulation of SiC Coated Carbon-Carbon Composites (탄화규소로 코팅된 탄소-탄소 복합재료의 단열 특성)

  • Seo, Hyoung-IL;Lim, Byung-Joo;Sihn, Ihn Cheol;Bae, Soobin;Lee, Hyung-Ik;Choi, Kyoon;Lee, Kee Sung
    • Composites Research
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    • v.33 no.3
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    • pp.101-107
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    • 2020
  • This study investigates the characterization on the thermal insulation properties of silicon carbide coating on the Cf-C composites. The silicon carbide coatings by chemical vapor deposition on the C/C composites are prepared to evaluate thermal resistance. Firstly, we perform the basic insulation test by thermal shock at 1350℃ in air on the C/C composite and SiC-coated C/C composite. We also performed the burner tests on the surface of the composites at high temperatures such as 1700 and 2000℃, and the weight change after burner tests are measured. The damages on the surface of C/C composite and SiC-coated composite are observed. As a result, the SiC coating is beneficial to protect the C/C composite from high temperature even though damages such as defoliation, crack and voids are observed during burner test at 2000℃.

Nanotribological Characterization of Annealed Fluorocarbon Thin Film in N2 and Vacuum (질소와 진공 분위기에서 에이징 영향에 따른 불화유기박막의 나노트라이볼러지 특성 평가)

  • 김태곤;김남균;박진구;신형재
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2002.05a
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    • pp.193-197
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    • 2002
  • The tribological properties and van der Waals attractive forces and the thermal stability of films are very important characteristics of highly hydrophobic fluorocarbon (FC) films for the long-term reliability of nano system. The effect of thermal annealing on films and van der Waals attractive forces and friction coefficient of films have been investigate d in this study. It was coated Al wafer which was treated O2 and Ar that ocatfluorocyclobutane ($C_4_{8}$) and Ar were supplied to the CVD chamber in the ratio of 2:3 for deposition of FC Films. Static contact angle and dynamic contact angle were used to characterize FC films. Thickness of films was measured by variable angle spectroscopy ellipsometer (VASE). Nanotribological data was got by atomic force microscopy (AFM) to measure roughness, lateral force microscopy (LFM) to measure friction force, and force vs. distance (FD) curve to evaluate adhesion force. FC films were cured in N2 and vacuum. The film showed the slight changes in its properties after 3 hr annealing. FTIR ATR studies showed the decrease of C-F peak intensity in the spectra as the annealing time increased. A significant decrease of film thickness has been observed. The friction force of Al surface was at least thirty times higher than ones with FC films. The adhesive force of bare Al was greater than 100 nN. After deposit FC films adhesive force was decreased to 40 nN. The adhesive force of films was decreased down to 10 nN after 24 hr annealing. During 24 hr annealing in $N_2$and vacuum at $100^{\circ}C$ film properties were not changed so much.

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Advanced Water Treatment by Hybrid Process of Multi-channel Ceramic MF and Photocatalyst: Effect of Organic Materials (광촉매 및 다채널 세라믹 정밀여과 혼성공정에 의한 고탁도 원수의 고도정수처리: 유기물의 영향)

  • Amarsanaa, Bolor;Park, Jin-Yong
    • Membrane Journal
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    • v.21 no.4
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    • pp.351-359
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    • 2011
  • For advanced drinking water treatment of high turbidity water, we used the hybrid process that was composed of photocatalyst packing in space of between outside of multi-channel ceramic microfiltration membrane and membrane module inside. Photocatalyst was polypropylene (PP) beads coated $TiO_2$ powder by CVD (chemical vapor deposition) process. Instead of natural organic matters (NOM) and fine inorganic particles in natural water source, standard NOM solution was prepared with humic acid and kaolin. Water-back-flushing of 10 sec was performed per every period of 10 min to minimize membrane fouling. Resistance of membrane fouling ($R_f$) increased and J decreased as concentration of humic acid changed from 2 mg/L to 10 mg/L, and finally the highest total permeate volume ($V_T$) could be obtained at 2 mg/L. Then, treatment efficiency of turbidity and $UV_{254}$ absorbance were above 96.4% and 78.9%, respectively. As results of treatment portions by membrane filtration, photocatalyst adsorption, and photo-oxidation in (MF), (MF + $TiO_2$), (MF + $TiO_2$ + UV) processes, turbidity was treated little by photocatalyst adsorption, and photo-oxidation. However, treatment portions of $UV_{254}$ absorbance by adsorption (MF + $TiO_2$) and photo-oxidation (MF + $TiO_2$ + UV) at humic acid of 4 mg/L and 6 mg/L were above 9.0, 9.5 and 8.1, 10.9%, respectively.

Advanced Water Treatment of High Turbidity Source by Hybrid Process of Photocatalyst and Ceramic Microfiltration: Effect of Organic Materials in Water-back-flushing (광촉매 및 세라믹 정밀여과 혼성공정에 의한 고탁도 원수의 고도정수처리: 물 역세척시 유기물의 영향)

  • Park, Jin-Yong;Lee, Gwon-Seop
    • Membrane Journal
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    • v.21 no.1
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    • pp.72-83
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    • 2011
  • For advanced drinking water treatment of high turbidity water, we used the hybrid module that was composed of photocatalyst packing between outside of tubular ceramic microfiltration membrane and membrane module inside. Photocatalyst was PP (polypropylene) bead coated $TiO_2$ powder by CVD (chemical vapor deposition) process. Instead of natural organic matters (NOM) and fine inorganic particles in natural water source, modified solution was prepared with humic acid and kaolin. Water-back-flushing of 10 sec was performed per every period of 10 min to minimize membrane fouling. Resistance of membrane fouling ($R_f$) decreased and J increased as concentration of humic acid changed from 10 mg/L to 2 mg/L, and finally the highest total permeate volume ($V_T$) could be obtained at 2 mg/L. Then, treatment efficiencies of turbidity and $UV_{254}$ absorbance were above 98.5% and 85.7%, respectively. As results of treatment portions by membrane filtration, photocatalyst adsorption, and photo-oxidation in MF, MF + $TiO_2$, and MF + $TiO_2$ + UV processes, turbidity was treated little by photocatalyst adsorption, and photo-oxidation. However, treatment portions of humic acid by adsorption and photo-oxidation were above 10.7 and 8.6%, respectively.

Associations between pulmonary function disorders & Metabolic Syndrome: A Cross-Sectional Study Using Data from KNHANES 2008-2013 (폐기능 장애와 대사 증후군 관련성: 2008-2013 국민건강 영양조사 자료 사용 단면연구)

  • Kang, Sun-Hee;Boo, Yoo-Kyung;Ahn, Byung-Ki
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.11
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    • pp.433-444
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    • 2017
  • This study was conducted to identify relationships between lung function disorders and Metabolic Syndrome(MetS) that have common comorbidities such as Cardio Vascular Diseases(CVD). According to the hypothesis that there may be a significant relationship between them, analyses were conducted to identify the proper management point for those diseases. Overall, 53,829 data were taken from KNHANES 2008-2013. Included data were PFT(Pulmonary Function Test) done and age over 40. All the 14 confounders applied, only 8,137 cases (M:3,951, F:4,186) were left. Low pulmonary function was divided into two categories, obstructive and restrictive patterns, based on the Global Initiative for Chronic Obstructive Lung Disease(GOLD) criteria, while MetS was defined based on the revised NCEP-ATPIII criteria. The relationships between those diseases were analyzed using logistic regression analysis. In addition, for the prevalence rate, cross-tab analysis were conducted. There were no significant relationships observed between obstructive lung disease and MetS, but a restrictive pattern had a meaningful relationship with MetS. Specifically, MetS showed a higher prevalence rate for both obstructive and restrictive pattern patients than the control group. Restrictive pattern patients showed a higher prevalence rate to MetS than obstructive patients. Overall, restrictive lung patterns showed a meaningful association with MetS, but not with obstructive patterns. Additionally, the prevalence rate of MetS among restrictive patients was higher than among obstructive patients.

W/TiN 금속 게이트 MOS 소자의 물리.전기적 특성 분석

  • 윤선필;노관종;노용한
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.123-123
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    • 2000
  • 선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

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Electrical response of tungsten diselenide to the adsorption of trinitrotoluene molecules (폭발물 감지 시스템 개발을 위한 TNT 분자 흡착에 대한 WSe2 소자의 전기적 반응 특성 평가)

  • Chan Hwi Kim;Suyeon Cho;Hyeongtae Kim;Won Joo Lee;Jun Hong Park
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.255-260
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    • 2023
  • As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe2 semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe2 was synthesized using thermal chemical vapor deposition, and afterward, WSe2 FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe2 crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe2 surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.