• 대한전자공학회논문지SD
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• 제41권11호
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• pp.1-6
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• 2004

RFIC를 위한 Nanoscale MOSFET에서의 유효 게이트 저항을 직접 추출법으로 추출하여 다양한 게이트 길이에 대해 분석하였다. 추출된 유효 게이트 저항은 비교적 정확하면서 간소화된 모델을 통한 측정결과와 비교하여 10GHz 대역까지 잘 일치함을 확인하였다. 같은 공정기술로 제작된 소자들 중에서 reverse short channel 효과가 생기지 않는 긴 채널 MOSFET 소자의 경우에 일반적인 유효 게이트 저항에서와는 다른 인가전압 및 주파수 종속성을 가짐을 확인하였다. 특히, 문턱전압을 전후하여 주파수에 따라 상이한 결과를 나타내고 있으며, 게이트 인가전압이 문턱전압에 가까울 때 비이상적으로 큰 유효 게이트 저항값을 나타내었다. 이러한 특성은 직접추출법을 사용하는 RF MOSFET 모델링에 있어서 참고해야 할 중요한 특성이 될 것이다.

• ETRI Journal
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• 제28권1호
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• pp.115-118
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• 2006

In this letter, a simple model parameter extraction methodology for an on-chip spiral inductor is proposed based on a wide-band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide-band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using $0.18\;{\mu}m$ CMOS technology.

• JSTS:Journal of Semiconductor Technology and Science
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• 제12권1호
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.49-53
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• 2005

The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10$\%$-20$\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.393-394
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• 2008

This paper presents a new method to extract the substrate resistance by fitting current-dependent base resistance of parasitic BJT without a complex RF extraction method. The extracted substrate resistance values using the new method match well with those using the RF one, verifying the accuracy of the proposed DC technique.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.367-372
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• 2004

Two new extraction methods for the thermal Resistance of HBT(Heterojunction Bipolar Transistors) are proposed. First, the analytical expression, based on the thermal characteristics that the base to emitter junction voltage drops with the increase of junction temperature, is derived. Second, the thermal resistance equation that can predict the measured DC(Direct Current) data optimally is derived. These optimal thermal resistance expression is applied to the 2 finger 2${\times}$20${\mu}{\textrm}{m}$-AlGaAs/GaAs HBT and shows the good agreement with the measured data.

• Journal of Oral Medicine and Pain
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• 제20권1호
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• pp.117-126
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• 1995

In order to evaluate objectively the level of tension and relaxation in dental practices, the author used Biotrainer(BF-102R), one of the GSR biofeedback apparatus, to examine 119 dental outpatients on their changes of GSR due to infection, preparation, extraction and readjustment. The obtained results were as follows : 1. There were no differences in the baseline GSR between the control group and the patient groups. 2. Changes in GSR by practices were significantly larger than the baseline GSR. 3. GSR in female was larger than that in male 4. While the GSR after injection, preparation and extraction revealed lower level, the GSR after readjustment revealed higher level. 5. Most of subjects just after injection, preparation and extraction were more frequent in decrease of GSR and those just after readjustment more were frequent n increase of GSR. 6. Type 1,2(increase in skin resistance) showed greater in injection, preparation and extraction group, while type 3(decrease in skin resistance) did in readjustment group.

• Elastomers and Composites
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• 제56권4호
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• pp.223-233
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• 2021

In this study, epoxidized liquid isoprene rubber (E-LqIR) was used as a processing aid in a silica-filled natural rubber compound to improve the fuel efficiency, abrasion resistance, and oil migration problems of truck and bus radial tire tread. The wear resistance, fuel efficiency, and extraction resistance of the compound were evaluated according to the molecular weight of E-LqIR. Results of the evaluation showed that the E-LqIR compound had a lower chemical crosslink density than that of a treated distillate aromatic extract (TDAE) oil compound because of the sulfur consumption of E-LqIR. However, the filler-rubber interaction improved because of the reaction of E-LqIR with silica and crosslink with the base rubber by sulfur. As the molecular weight of E-LqIR increased, crosslink with sulfur was facilitated, and the filler-rubber interaction improved, resulting in improved abrasion resistance. The fuel efficiency performance of the E-LqIR compound was poorer than that of the TDAE oil compound because of the low chemical crosslink density and hysteresis loss at the free chain end of E-LqIR. However, the fuel efficiency performance improved as the molecular weight of E-LqIR increased.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.17-20
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• 2003

The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than 10%-20% of the channel resistance. To achieve the requirements, we should investigate a methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.