• Title/Summary/Keyword: external quantum efficiency

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Effect of Surface Microstructure of Silicon Substrate on the Reflectance and Short-Circuit Current (실리콘 기판 표면 형상에 따른 반사특성 및 광 전류 개선 효과)

  • Yeon, Chang Bong;Lee, Yoo Jeong;Lim, Jung Wook;Yun, Sun Jin
    • Korean Journal of Materials Research
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    • v.23 no.2
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    • pp.116-122
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    • 2013
  • For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.

Synthesis and Characterization of Iridium-Containing Green Phosphorescent Polymers for PLEDs

  • Xu, Fei;Kim, Hee Un;Mi, Dongbo;Lim, Jong Min;Hwang, Ju Hyun;Cho, Nam Sung;Lee, Jeong-Ik;Hwang, Do-Hoon
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.399-405
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    • 2013
  • Two series of new green phosphorescent polymers bearing a bis(2-phenyl-pyridine)iridium(III)(dibenzoylmethane) [$(ppy)_2Irdbm$] complex were designed and synthesized. Poly-carbazole (PCbz) derivative or polyfluorene with pendant carbazole groups (PFCbz) were employed as host polymers for the iridium complex. The iridium complex monomer was copolymerized with the host monomers using varying monomer ratios via a Yamamoto coupling reaction. Efficient energy transfer from host to dopant unit was observed by increasing the ratio of the iridium guest in the copolymers. Electroluminescent devices with the configuration ITO/PEDOT:PSS/polymer/BmPyPB/LiF/Al were fabricated and characterized. The phosphorescent polymers composed of the iridium complex guest and polyfluorene with carbazole pendants as a host performed better than the polymers composed of the same guest and the main chain polycarbazole host. A maximum external quantum efficiency of 0.73%, a luminous efficiency of 1.21 cd/A, and a maximum luminance of 372 $cd/m^2$ were obtained from a device fabricated using one of the synthesized copolymers.

Electroluminescence Properties of Novel Blue-Emitting Materials Based on Spirobifluorene (Spirobifluorene 그룹을 포함하는 새로운 청색 발광 재료의 전계발광)

  • Sunwoo, Park;Hayoon, Lee;Hyukmin, Kwon;Godi, Mahendra;Sangshin, Park;Seungeun, Lee;Jongwook, Park
    • Applied Chemistry for Engineering
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    • v.34 no.1
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    • pp.94-97
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    • 2023
  • 2,7-bis(3',6'-diphenyl-[1,1':2',1"-terphenyl]-4'-yl)-9,9'-spirobi[fluorene] (BTPSF) and 2,7-bis(1,4-diphenyltriphenylen-2-yl)-9,9'-spirobi[fluorene] (BDTSF) were successfully synthesized as novel blue-emission materials for organic light-emitting diodes (OLEDs) based on the spirobifluorene (SBF) moiety. BTPSF and BDTSF were obtained in high purity via a Diels-Alder reaction, without the use of a catalyst. Photoluminescence spectra of the synthesized materials showed maximum emitting wave-lengths of approximately 381 and 407 nm in solution and 395 and 434 nm in the film state, for BTPSF and BDTSF, respectively, indicating ultra-violet and deep blue emission colors. BDTSF was applied as an emissive layer (EML) in non-doped devices and achieved a current efficiency of 0.61 cd/A and an external quantum efficiency (EQE) of 0.46%.

Bandgap Engineering in CZTSSe Thin Films via Controlling S/(S+Se) Ratio

  • Vijay C. Karade;Jun Sung Jang;Kuldeep Singh, Gour;Yeonwoo Park;Hyeonwook, Park;Jin Hyeok Kim;Jae Ho Yun
    • Current Photovoltaic Research
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    • v.11 no.3
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    • pp.67-74
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    • 2023
  • The earth-abundant element-based Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells (TFSCs) have attracted greater attention in the photovoltaic (PV) community due to their rapid development in device power conversion efficiency (PCE) >13%. In the present work, we demonstrated the fine-tuning of the bandgap in the CZTSSe TFSCs by altering the sulfur (S) to the selenium (Se) chalcogenide ratio. To achieve this, the CZTSSe absorber layers are fabricated with different S/(S+Se) ratios from 0.02 to 0.08 of their weight percentage. Further compositional, morphological, and optoelectronic properties are studied using various characterization techniques. It is observed that the change in the S/(S+Se) ratios has minimal impact on the overall Cu/(Zn+Sn) composition ratio. In contrast, the S and Se content within the CZTSSe absorber layer gets altered with a change in the S/(S+Se) ratio. It also influences the overall absorber quality and gets worse at higher S/(S+Se). Furthermore, the device performance evaluated for similar CZTSSe TFSCs showed a linear increase and decrease in the open circuit voltage (Voc) and short circuit current density (Jsc) of the device with an increasing S/(S+Se) ratio. The external quantum efficiency (EQE) measured also exhibited a linear blue shift in absorption edge, increasing the bandgap from 1.056 eV to 1.228 eV, respectively.

Strategies to Design Efficient Donor-Acceptor (D-A) Type Emitting Molecules: Molecular Symmetry and Electron Accepting Ability of D-A Type Molecules

  • Hyun Gi Kim;Young-Seok Baek;Sung Soo Kim;Sang Hyun Paek;Young Chul Kim
    • Applied Chemistry for Engineering
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    • v.34 no.6
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    • pp.633-639
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    • 2023
  • We synthesized 2-(10-methyl-10H-phenothiazin-3-yl)-5-phenyl-1,3,4-oxadiazole (MPPO) and 5,5-(10-methyl-10H-phenothiazin-3,7-diyl)-bis-(2-phenyl-1,3,4-oxadiazole) (DPPO). MPPO has both electron-donating and electron-accepting substituents with asymmetric molecular geometry. By incorporating one extra electron-accepting group into MPPO, we created a symmetric molecule, which is DPPO. The optical and electrochemical properties of these compounds were measured. The lowest unoccupied molecular orbital (LUMO) level of DPPO was lower than that of MPPO. The excited-state dipole moment of DPPO, with symmetric geometry, was calculated to be 4.1 Debye, whereas MPPO, with asymmetric geometry, had a value of 7.0 Debye. The charge-carrier mobility of both compounds was similar. We fabricated non-doped organic light-emitting diodes (OLEDs) using D-A type molecules as an emitting layer. The current efficiency of the DPPO-based device was 7.8 cd/A, and the external quantum efficiency was 2.4% at 100 cd/m2, demonstrating significantly improved performance compared to the MPPO-based device. The photophysical and electroluminescence (EL) characteristics of the two D-A type molecules showed that molecular symmetry, as well as the lowered LUMO level of DPPO, played critical roles in the enhancement of EL performance.

Fabrication of a-Si:H/a-Si:H Tandem Solar Cells on Plastic Substrates (플라스틱 기판 위에 a-Si:H/a-SiGe:H 이중 접합 구조를 갖는 박막 태양전지 제작)

  • Kim, Y.H.;Kim, I.K.;Pyun, S.C.;Ham, C.W.;Kim, S.B.;Park, W.S.;Park, C.K.;Kang, H.D.;You, C.;Kang, S.H.;Kim, S.W.;Won, D.Y.;Choi, Y.;Nam, J.H.
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.104.1-104.1
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    • 2011
  • 가볍고, 유연성(flexibility)을 갖는 박막(thin film)형 플랙서블 태양전지(flexible solar cell)는 상황에 따른 형태의 변형이 가능하여, 휴대가 간편하고, 기존 혹은 신규 구조물의 지붕(rooftop)등에 설치가 용이하여, 차세대 성장 동력 분야에서 각광받고 있다. 그러나 아직까지 플랙서블 태양전지는 제작시 열에 의한 기판의 변형, 기판 이송시 너울 현상, 대면적 패터닝(patterning) 기술 등 많은 어려움 등으로 웨이퍼나 글라스 기판에 제조된 태양전지 대비 낮은 광전환 효율을 갖는다. 따라서 본 연구에서는 플랙서플 태양전지 성능개선을 위해 3.5세대급 ($450{\times}450cm^2$) 스퍼터(sputter), 금속유기 화학기상장치 (MOCVD), 플라즈마 화학기상장치 (PECVD), 레이저 가공장치 (Laser scriber)를 이용하여 a-Si:H/a-SiGe:H 이중접합(tandem)을 갖는 태양전지를 제작하였고, 광 변환효율 특성을 평가하였다. 전도도(conductivity), 라만(Raman)분광 및 UV/Visible 분광 분석을 통하여 박막의 전기적, 구조적, 광학적 물성을 평가하여 단위박막의 물성을 최적화 했다. 또한 제작된 태양전지는 쏠라 시뮬레이터 (Solar Simulator)를 이용하여 성능 평가를 수행하였고, 상/하부층의 전류 정합 (current matching)을 위해 외부양자효율 (external quantum efficiency) 분석을 수행하였다. 제작된 이중접합 접이식 태양전지로 소면적($0.25cm^2$)에서 8.7%, 대면적($360cm^2$ 이상) 8.0% 이상의 효율을 확보하였으며, 성능 개선을 위해 대면적 패턴 기술 향상 및 공정 기술 개선을 수행 중이다.

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Optical and Electrical Characteristics of GaN-based Blue LEDs after Low-current Stress (GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화)

  • Kim, Seohee;Yun, Joosun;Shin, Dong-Soo;Shim, Jong-In
    • Korean Journal of Optics and Photonics
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    • v.23 no.2
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    • pp.64-70
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    • 2012
  • We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

The Characteristic Analysis of White Organic Light Emitting Diodes with Two-wavelength Materials at Emitting Layer (발광층에 2파장 재료를 갖는 백색 유기발광소자의 특성분석)

  • Kang, Myung-Koo;Shim, Ju-Yong;Oh, Hwan-Sool
    • 전자공학회논문지 IE
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    • v.45 no.1
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    • pp.1-6
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    • 2008
  • In this paper, the white organic LED with two-wavelength was fabricated using the NPB of blue emitting material and a series of orange color fluorescent dye(Rubrene) by vacuum evaporation processes. The structure of white OLED was ITO/NPB$(200{\AA})$NPB:Rubrene$(300{\AA})$/BCP$(100{\AA})/Alq_3(100{\AA})/Al(1000{\AA})$ and the doping concentration of Rubrene was 0.75 wt%. We obtained the white OLED with CIE color coordinates were x=0.3327 and y=0.3387, and the maximum EL wavelength of the fabricated white organic light-emitting device was 560 nm at applied voltage of 11 V, which was similar to NTSC white color with CIE color coordinates of x=0.3333 and y=0.3333. The turn-on voltage is 1 V, the light-emitting him-on voltage is 4 V. We were able to obtain an excellent maximum external quantum efficiency of 0.457 % at an applied voltage of 18.5 V and current density of $369mA/cm^2$.

Performance of Three-Layered Organic Light-Emitting Diodes Using the Hole-Transport and Injection Layer of TPD and Teflon-AF, and the Electron-Injection Layer of Li2CO3 and LiF

  • Shin, Jong Yeol;Kim, Tae Wan;Kim, Gwi Yeol;Lee, Su Min;Hong, Jin Woong
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.2
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    • pp.89-92
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    • 2017
  • The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

CIGS 박막태양전지용 Cd free형 ZnS(O, OH) 버퍼층 제조 및 특성평가

  • Kim, Hye-Jin;Kim, Jae-Ung;Kim, Gi-Rim;Jeong, Deok-Yeong;Jeong, Chae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.257.1-257.1
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    • 2015
  • Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

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