• Title/Summary/Keyword: external quantum efficiency

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Synthesis and Characterization of Red Electrophosphorescent Polymers Containing Pendant Iridium(III) Complex Moieties

  • Xu, Fei;Mi, Dongbo;Bae, Hong Ryeol;Suh, Min Chul;Yoon, Ung Chan;Hwang, Do-Hoon
    • Bulletin of the Korean Chemical Society
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    • v.34 no.9
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    • pp.2609-2615
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    • 2013
  • A series of fluorene-carbazole copolymers containing the pendant phosphor chromophore $Ir(absn)_2(acac)$ (absn: 2-(1-naphthyl)benzothiazole; acac: acetylacetone) were designed and synthesized via Yamamoto coupling. In the film state, these copolymers exhibited absorption and emission peaks at approximately 389 and 426 nm, respectively, which originated from the fluorene backbone. However, in electroluminescent (EL) devices, a significantly red-shifted emission at approximately 611 nm was observed, which was attributed to the pendant iridium(III) complex. Using these copolymers as a single emission layer, polymer light-emitting devices with ITO/PEDOT:PSS/polymer:DNTPD/TmPyPb/LiF/Al configurations exhibited a saturated red emission at 611 nm. The attached iridium(III) complex had a significant effect on the EL performance. A maximum luminous efficiency of 0.85 cd/A, maximum external quantum efficiency of 0.77, maximum power efficiency of 0.48 lm/W, and maximum luminance of 883 $cd/m^2$ were achieved from a device fabricated with the copolymer containing the iridium(III) complex in a 2% molar ratio.

Charge Transport Characteristics of Dye-Sensitized TiO2 Nanorods with Different Aspect Ratios

  • Kim, Eun-Yi;Lee, Wan-In;Whang, Chin Myung
    • Bulletin of the Korean Chemical Society
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    • v.32 no.8
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    • pp.2671-2676
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    • 2011
  • Nanocrystalline $TiO_2$ spherical particle (NP) with a dimension of 5 ${\times}$ 5.5 nm and several nanorods (NR) with different aspect ratios (diameter ${\times}$ length: 5 ${\times}$ 8.5, 4 ${\times}$ 15, 4 ${\times}$ 18 and 3.5 ${\times}$ 22 nm) were selectively synthesized by a solvothermal process combined with non-hydrolytic sol-gel reaction. With varying the molar ratio of TTIP to oleic acid from 1:1 to 1:16, the NRs in the pure anatase phase were elongated to the c-axis direction. The prepared NP and NRs were applied for the formation of nanoporous $TiO_2$ layers in dye-sensitized solar cell (DSSC). Among them, NR2 ($TiO_2$ nanorod with 4 ${\times}$ 15 nm) exhibited the highest cell performance: Its photovoltaic conversion efficiency (${\eta}$) of 6.07%, with $J_{sc}$ of 13.473 mA/$cm^2$, $V_{oc}$ of 0.640 V, and FF of 70.32%, was 1.44 times that of NP with a size of 5 ${\times}$ 5.5 nm. It was observed from the transient photoelectron spectroscopy and the incident photon to current conversion efficiency (IPCE) spectra that the $TiO_2$ films derived from NR2 demonstrate the longest electron diffusion length ($L_e$) and the highest external quantum efficiency (EQE).

A Stable and Efficient Host Material Having Tetraphenylsilane for Phosphorescent Organic Light Emitting Diodes

  • Park, Hyung-Dol;Kang, Jae-Wook;Lee, Deug-Sang;Kim, Ji-Whan;Jeong, Won-Ik;Park, Young-Seo;Lee, Se-Hyung;Go, Kyung-Moon;Lee, Jong-Soon;Kim, Hyong-Jun;Kim, Jang-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.503-505
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    • 2008
  • A host material containing tetraphenylsilane, 9-(4-triphenylsilanyl-(1,1'4,1")-terphenyl-4"-yl)-9H-cabazole (TSTC), was synthesized for green phosphorescent organic emitting diodes. $Ir(ppy)_3$ based OLEDs using TSTC host and DTBT (2,4-diphenyl-6-(4'yl)-1,3,5-triazine) hole blocking layer (HBL) showed the maximum external quantum efficiency of 19.8 %, the power efficiency of 59.4 lm and high operational stability with a half lifetime of 160,000 h at an initial luminance of $100\;cd/m^2$.

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Effect of Changing the Thickness of Charge Control Layer on Performance of Green Phosphorescent Organic Light-Emitting Diodes (녹색 인광 유기발광다이오드에서 전하 조절층의 두께 변화가 성능에 미치는 효과에 대한 연구)

  • Lee, Dong-Hyung;Lee, Seok-Jae;Koo, Ja-Ryong;Lee, Ho-Won;Lee, Song-Eun;Yang, Hyung-Jin;Park, Jae-Hoon;Kim, Young-Kwan
    • Journal of the Korean Applied Science and Technology
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    • v.30 no.2
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    • pp.244-250
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    • 2013
  • We investigated green phosphorescent organic light-emitting diodes (PHOLEDs) with charge control layer (CCL) to produce high efficiency. The CCL and host material which was 4,4,N,N'-dicarbazolebiphenyl (CBP) of bipolar property can control the carrier movement in emitting layer (EML). The performance improvement by the insertion of CCL was realized to the well confined exciton and the reduced triplet exciton quenching effect in EML. Five types of devices (Device A, B, C, D, and E) were fabricated following the thickness of CCL within EML. The properties of device D using optimized thickness of CCL showed external quantum efficiency of 16.22% and luminous efficiency of 55.76 cd/A, respectively.

Efficient White Organic Light-emitting Device by utilizing a Blue-emitter Doped with a Red Fluorescent Dopant

  • Lim, Jong-Tae;Ahn, Young-Joo;Kang, Gi-Wook;Lee, Nam-Heon;Lee, Mun-Jae;Kang, Hee-Young;Lee, Chang-Hee;Ko, Young-Wook;Lee, Jin-Ho
    • Journal of Information Display
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    • v.4 no.2
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    • pp.13-18
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    • 2003
  • We synthesized bis (2-methyl-8-quinolinolato)(triphenylsiloxy) aluminum (III) (SAlq), a blue-emitting material having a high luminous efficiency, through a homogeneous-phase reaction. The photoluminescence (PL) and electroluminescence (EL) spectra of SAlq show two peaks at 454 nm and 477 nm. Efficient white light-emitting devices are fabricated by doping SAlq with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8yl) vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 results in light-emission of both blue and orange colors. Devices with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nmj/Al show EL peaks at 456 nm and 482 nm originating from SAlq and at 570 nm from DCM2, resulting in the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.32, 0.37). The device exhibits an external quantum efficiency of about 2.3 % and a luminous efficiency of about 2.41m/W at 100 $cd/m^2$. A maximum luminance of about 23,800 $cd/m^2$ is obtained at the bias voltage of 15 V.

Effect on the Electrical Characteristics of OLEDs Depending on Amorphous Fluoropolymer (유기발광다이오드의 전기적 특성에 미치는 Teflon-AF의 영향)

  • Shim, Sang-Min;Han, Hyun-Suk;Kang, Yong-Gil;Kim, Weon-Jong;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.750-754
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    • 2011
  • In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

Three White Organic Light-emitting Diodes with Blue-green Fluorescent and Red Phosphorescent Dyes

  • Galbadrakha, Ragchaa;Bang, Hwan-Seok;Baek, Heume-Il;Lee, Chang-Hee
    • Journal of Information Display
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    • v.9 no.3
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    • pp.23-27
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    • 2008
  • This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

텍스쳐 형성 방식에 따른 실리콘 태양전지의 모듈화에 의한 효율 손실에 대한 연구

  • No, Jun-Hyeong;Son, Chan-Hui;Kim, Dong-Hae;Seo, Il-Won;Yun, Myeong-Su;Jo, Tae-Hun;Jo, Lee-Hyeon;Gwon, Gi-Cheong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.438-438
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    • 2012
  • 결정질 실리콘 태양전지 공정 중 텍스쳐 공정은 표면에서 반사되는 반사광을 줄여 단락전류(Isc)를 증가시킨다. 표면 텍스쳐 형성 방식으로는 일반적으로 습식 식각(Wet etching) 공정과 건식 식각(Reactive ion etching:RIE) 공정이 있다. 습식 식각 공정은 식각 용액을 사용하는 공정이며 건식 식각 공정은 플라즈마를 통하여 식각하는 공정으로 습식 식각 공정의 경우 식각 용액에 의한 공정상 위험도가 높으며, 용액의 폐기물에 의한 환경오염 문제가 크다. 건식 식각공정의 경우 습식 식각과 달리 공정상 위험도가 낮으며 불규칙적인 결정방향에 영향 받지 않는 비등방성 식각이 가능하여 다결정 실리콘 태양전지의 경우 습식 식각 공정보다 반사광이 적어 단락전류가 증가하게 된다. 그리고 태양전지를 Photovoltaic module로 만들게 되면 태양전지의 효율이 떨어지는데 이것을 Cell to module loss (CTM loss)라 부르며 이는 태양전지의 발전량을 줄이는 큰 원인이 된다. CTM loss의 경우 습식 식각 공정보다 건식 식각 공정에서 더 크게 나타나며 건식 식각 공정한 PV module의 경우 CTM loss로 인해 습식 식각 공정을 통한PV module와 비슷한 효율을 내게 된다. 본 연구에서는 식각 공정의 방식에 따라 나타나는CTM loss 중 광 손실 원인을 외부양자효율(External Quantum Efficiency)과 투과율(Transmittance), 반사율(Reflectance) 등 광 특성 통하여 분석한다.

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Solution processed organic photodetector utilizing an interdiffused polymer/fullerene bilayer

  • Shafian, Shafidah;Jang, Yoonhee;Kim, Kyungkon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.348-348
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    • 2016
  • Low dark current (off-current) and high photo current are both essential for a solution processed organic photodetector (OPD) to achieve high photo-responsivity. Currently, most OPDs utilize a bulk heterojunction (BHJ) photo-active layer that is prepared by the one-step deposition of a polymer:fullerene blend solution. However, the BHJ structure is the main cause of the high dark current in solution processed OPDs. It is revealed that the detectivity and spectral responsivity of the OPD can be improved by utilizing a photo-active layer consisting of an interdiffused polymer/fullerene bilayer (ID-BL). This ID-BL is prepared by the sequential solution deposition (SqD) of poly(3-hexylthiophene) (P3HT) and [6,6] phenyl C61 butyric acid methyl ester (PCBM) solutions. The ID-BL OPD is found to prevent undesirable electron injection from the hole collecting electrode to the ID-BL photo-active layer resulting in a reduced dark current in the ID-BL OPD. Based on dark current and external quantum efficiency (EQE) analysis, the detectivity of the ID-BL OPD is determined to be $7.60{\times}1011$ Jones at 620 nm. This value is 3.4 times higher than that of BHJ OPDs. Furthermore, compared to BHJ OPDs, the ID-BL OPD exhibited a more consistent spectral response in the range of 400 - 660 nm.

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Electroluminescent Properties of Anthracene-Based Dye with ${\alpha}-Naphthylethenyl$ Subsituent ((${\alpha}-Naphthyl$ Group이 치환된 안트라센 염료의 전계발광 특성)

  • Kim, Hong-Soo;Lee, Dong-Kyu;Nam, Ki-Dae
    • Journal of the Korean Applied Science and Technology
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    • v.16 no.2
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    • pp.127-133
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    • 1999
  • New electroluminescent materials base on anthracene chromophore, [9.10-bis(${\alpha}$-naph -thylethenyl) anthracene (${\alpha}$-BNA)] were newly synthesized. The anthracene derivatives with bulky substituent possessed high melting point and they gave stable amorphous films through vacuum - sublimation methods. Three types of electroluminescent devices were fabricated with double layer and triple layer structure : ITO/TPD/emission layer/MgAg, ITO/emission layer/ OXD-7 and ITO/ TPD/ emission layer/OXD-7/MgAg, respectively. In three types of devices with the emissive layer of ${\alpha}$-BNA, efficient orange electroluminescence was observed. In the triple layer device whit a emitting layer of 20 nm thickness , maximum luminance was about 10000 cd/ $m^2$ at an applied voltage of 10v and maximum external quantum efficiency was 1.0%.