• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.221-221
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• 2003

본 연구에서는 스핀밸브 다층박막에서 교환 바이어스에 영향을 끼치는 요인 중 하나인 강자성층과 반강자성층사이의 접합 계면에서의 표면 거칠기 [1,2]를 줄이기 위해 현재 반도체 공정에 사용되고 있는 이온빔 에칭 장비를 사용하여 스핀 밸브 다층박막의 씨앗층 에칭에 따른 교환 바이어스를 알아보고자 하였다. 스핀밸브 구조는 강자성층/비자성층/강자성층의 기본구조를 갖는데 이중 하나의 강자성층의 스핀방향이 반강자성층에 의해 고정되는 구조[3]로써 이러한 고정 효과를 교환 바이어스(exchange bias)라 부른다. 교환 바이어스(exchange bias)현상은 강자성과 반강자성의 접합계면에서 강한 상호 교환결합력에 의해 나타나는 현상으로 이러한 교환 바이어스 특성은 하드드라이브의 고밀도 자기헤드소자 및 비휘발성 자기 메모리소자에 응용되어 기존의 자기저항 소자의 특성을 크게 향상시킬 수 있게 되었다.

• Journal of Magnetics
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• v.14 no.4
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• pp.147-149
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• 2009

We report the exchange bias in antiferromagnet/ferrimagnet $Cr_2O_3/Fe_3O_4$ core/shell nanoparticles. The magnetic field hysteresis curve for $Cr_2O_3/Fe_3O_4$ nanoparticles after field-cooling (FC) clearly showed both horizontal ($H_{EB}{\sim}$610 Oe) and vertical (${\Delta}M{\sim}$5.6 emu/g) shifts at 5 K. These shifts disappeared as the temperature increased toward the Neel temperature of $Cr_2O_3\;(T_N{\sim}$307 K). The $H_{EB}\;and\;{\Delta}M$ values were sharply decreased between the $1^{st}\;and\;the\;2^{nd}$ magnetic field cycles, and then slowly decreased with further cycling. These results are discussed in terms of the formation of single domains with pinned, uncompensated, antiferromagnetic spin and their evolution into multi-domains with cycling.

• Journal of Magnetics
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• v.15 no.1
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• pp.17-20
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• 2010

The relationship between ferromagnet anisotropic magnetization and the antiferromagnet atomic spin configuration was investigated for various angles of the uniaxial deposition magnetic field of the FeMn layer in the Corning glass/Ta(5nm)/NiFe(7nm)/FeMn(25nm)/Ta(5nm) multilayer that was prepared by the ion beam sputter deposition. The exchange bias field ($H_{ex}$) obtained from the measurement of the easy-axis MR loop decreased to 40 Oe at the deposition field angle of $45^{\circ}$, and to 0 Oe at the angle of $90^{\circ}$. When the difference between the uniaxial axis between the ferromagnet NiFe and the antiferromagnet FeMn was $90^{\circ}$, the strong antiferromagnetic dipole moment of FeMn caused the weak ferromagnetic dipole moment of NiFe to rotate in the interface.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.80-81
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• 2005

The resilience of the exchange bias ($H_{EX}$) in ferromagnet / antiferromagnet bilayers is generally studied in terms of repeated hysteresis loop cycling or by protracted annealing under reversed field (training and long-term relaxation respectively). The stability of $H_{EX}$ is fundamental for practical application of exchange bias systems. In this paper we report measurements of training and relaxation in FeNi films coupled with the antiferromagnet FeMn. We show that $H_{EX}$ suppressed both by training and relaxation was partially recovered as soon as a field cycling for consecutive hysteresis loop measurement was stopped or the magnetization of the ferromagnet was switched back to the biased direction.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.298.2-298.2
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• 2008

• Journal of Magnetics
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• v.16 no.2
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• pp.97-100
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• 2011

Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.

• Journal of Magnetics
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• v.10 no.1
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• pp.33-35
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• 2005

Perpendicular magnetization curves and crystal textures of $[Pd(0.8 nm)/Co(0.8 nm)]_5/FeMn$ multilayers having an exchange-biased perpendicular magnetic anisotropy as a function of FeMn thickness and annealing temperature were measured. As FeMn thickness increases from 0 to 21 nm, the perpendicular exchange biasing field ($H_{ex}$) obtained the maximum value of 130 Oe at FeMn thickness 12 nm. As the annealing temperature increases to $240^{\circ}C$, the H_ex increased from 115 Oe to 190 Oe and the exchange-biased perpendicular magnetic anisotropy disappeared at $330^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.18 no.5
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• pp.185-189
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• 2008

We observe the change of coercivity and exchange bias, depending on inserting material and thickness in a [Pd(0.6 nm)/$Co(0.2)]_5$/ FeMn(10) multilayer structure with perpendicular anisotropy. When 0.78 and 1.28 nm thick NiFe substitutes for Co in a $[Pd(0.6 nm)Co(0.2)]_4$/Pd(0.6)/NiFe(t)/FeMn(10) structure, we obtain the exchange bias of 360 Oe. In addition, when $Co_8Fe_2$ and $Co_9Fe_1$ are inserted for Co/FeMn interface, we obtain the exchange bias of 380 nm for a 0.68 nm thick $Co_8Fe_2$ and 580 Oe for a 0.52 nm thick $Co_9Fe_1$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.229-229
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• 2003

Enhancement of the exchange bias and optimization of the structure have been the focus that many researchers studied, recently [1]. In this report, magnetic properties of MTJs with structure of Si/Ta (5)/Cu (10)/ Ta (5)/ Ni$\sub$80/Fe$\sub$20/ Cu (5)/ Mn$\sub$75Ir$\sub$25/ (10)/ Co$\sub$70/Fe$\sub$30/ (2.5)/ Al-O (1.5)/ Co$\sub$70/Fe$\sub$30/ (2.5)/ Ni$\sub$80/Fe$\sub$20/ (t)/ Ta (5) (t=0,10, 30, 60 and 100 nm, respectively) were investigated. The relationship between the structure and magnetic parameters of interfacial exchange coupling and interlayer coupling in as-deposited and annealed junctions was studied. The temperature dependence of exchange coupling was considered.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.239-243
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• 1994

$NiFe/TbCo/Si_3N_4$ thin films were fabricated, which can be employed as dualOongitudinal and transverse) biased magnetoresistive elements utilizing surface magnetic exchange at the interface of NiFe/TbCo films. When Tb area percent was 36 % and substrate bias was not applied, magnetic exchange fields of 100~180 Oe were obtained. The thicknesses of NiFe, TbCo and $Si_3N_4$(Protective layer) were $470\;{\AA},\;2400\;{\AA}\;and\;600\;{\AA}$, respectively. Magnetoresistance ratio of 1.45 % was obtained using NiFe films fabricated with 1000 W power and 2.5 mTorr of Ar pressure. The MR ratio of microstructured elements was reduced to 1.31 % and the MR response curves were shown not to saturate due to demagnetizing fields of the elements. When elements were fabricated with $36^{\circ}$ of misalignment with respect to the exchange field direction using films having 150 Oe exchange field, MR response curve was shifted by 85 Oe, and the operating point of the device shifted to the linear region of the response. Also, the Barkhausen noise was eiminated due to longitudinal bias field originating from the exchange field.