• Journal of Bio-Environment Control
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• v.8 no.4
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• pp.250-256
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• 1999

A wrapped fruit-vegetable can restrain from evaporating its water, help to be supplied with a little fresh air, prevent from injuring and damaging during transporting to other positions. Therefore, this study was carried out to develop an automatic wrapping system specifically tailored to pack up from one to four numbers of long type fruit-vegetable in wrap foil. Performance tests of the system were conducted by using three different kinds of fruit-vegetable (cucumber, eggplant, Pumpkin) to determine the success wrapping rate. Each fruit-vegetable is divided into two grades such as A grade and B grade. B grade is more bended curve than A grade. The success wrapping rate of eggplant was 100% regardless of the grade and the number of fruit-vegetable. and also that of cucumber was 100% all but packing 4 numbers of B grade. However, that of pumpkin was 45%, As the number and the bended degree of pumpkin was increased, the success wrapping rate of pumpkin was decreased, because the surface area or the bended degree were increased.

• Journal of Astronomy and Space Sciences
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• v.30 no.3
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• pp.159-162
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• 2013

We report the detection of a quasi-sinusoidally modulated optical flux with a period of 4.6343 hour in the optical and infrared band of the Fermi source 2FGL J2339.7-0531. Comparing the multi-wavelength observations, we suggest that 2FGL J2339.7- 0531 is a ${\gamma}$-ray emitting millisecond pulsar (MSP) in a binary system with an optically visible late-type companion accreted by the pulsar, where the MSP is responsible for the ${\gamma}$-ray emission while the optical and infrared emission originate from the heated side of the companion. Based on the optical properties, the companion star is believed to be heated by the pulsar and reaches peak magnitude when the heated side faces the observer. We conclude that 2FGL J2339.7-0531 is a member of a subclass of ${\gamma}$-ray emitting pulsars -the 'black widows'- recently revealed to be evaporating their companions in the late-stage of recycling as a prominent group of these newly revealed Fermi sources.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.120-121
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• 2009

Single crystalline $ZnIn_2Se_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating, $ZnIn_2Se_4$ source at $630^{\circ}C$. After the as-grown $ZnIn_2Se_4$ single crystalline thin films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of $ZnIn_2Se_4$single crystalline thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $ZnIn_2Se_4$ single crystalline thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2Se_4$/GaAs did not form the native defects because In in $ZnIn_2Se_4$ single crystalline thin films existed in the form of stable bonds.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.1
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• pp.77-86
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• 1992

This paper discusses the thermodynamic study on the suction cooling-steam injected gas turbine cycle. The aim of this study is to improve the thermal efficiency and the specific output by steam injection produced by the waste heat from the waste heat recovery boiler and by cooling compressor inlet air by an ammonia absorption-type suction cooling system. The operating region of this newly devised cycle depends upon the pinch point limit and the outlet temperature of refrigerator. The higher steam injection ratio and the lower the evaporating temperature of refrigerant allow the higher thermal efficiency and the specific output. The optimum pressure ratios and the steam injection ratios for the maximum thermal efficiency and the specific output can be found. It is evident that this cycle considered as one of the most effective methods which can obtain the higher thermal efficiency and the specific output comparing with the conventional simple cycle and steam injected gas turbine cycle.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.2
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• pp.31-37
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• 2000

This study investigated heat transfer characteristics of refrigeration system using new type aluminium heat transfer tube for evaporator of refrigeration and air-conditioning comparing with bare tube. From the result of heat transfer experiment form one phase flow using cooled and hot water, about 20% heat transfer performance is superior in case of same quantity of flow and about 4% heat transfer performance if superior in case of same velocity comparing with bare tube. Casing of two phase flow, heat transfer performance of new type aluminum heat transfer tube shows about 50% superior heat transfer performance comparing with bare tube in the same evaporating pressure when using heat transfer tube as evaporator and shows about 47% increase when expressing performance coefficient as the rate of refrigerating capacity and compressing work. However, it can be known that pressure drop in the heat transfer tube is taken higher value of about 18% in case of new type aluminum heat transfer tube. From the above result, new type aluminum heat transfer tube is excellent comparing with bare heat transfer tube using the existing heat exchanger for refrigerator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.101-102
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C$ and $440^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4} eV/K)T^2/(T+332 K)$. After the as-grown $AgGaS_2$ single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.235-243
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• 1997

The high-$T_c$ superconducting phase, $YBa_2Cu_3O_x$, was deposited on the single crystal MgO substrate, using a liquid aerosol feed method in a plasma enhanced chemical vapor deposition(PECVD) reactor. The effect of the plasma distribution depending on the design of a reactor was studied by the analysis of the microstructures of thin films. The particles landed were frequently observed on the films and the two causes that were responsible for the particle deposition were explained. The particles were deposited by the unstable and non-uniform plasma and the low evaporation rate of the precursors. Also, the thin film deposition rate decreased significantly as the distance between the evaporating location and the substrate increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.

• New & Renewable Energy
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• v.8 no.1
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• pp.35-43
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• 2012

Patent analysis is the extracting knowledge which is needed for the company's research and development strategy through accumulated worldwide patent database. In order to set the future direction corresponding technology which is scheduled to be developed, the technology trends and deployment processes are identified by analyzing results of present patent applications. The patent analysis provides the required results for analyzing present patent applications. In this paper, technology classification for related patent analysis methods and system, and patent analysis for desalination technology using solar energy development was carried out as well. The patents in Korea, USA, Japan, China, and Europe were searched. The technology trend desalination technology using solar energy was analyzed based on patent application year, countries, main applications, and each technologies. The application status of desalination patents showed a tendency to increase slightly. It was found that the number of patent for applied desalination was USA patent 21.0%, Japan patent 27.0%, China 24.8%, EU 2.7% and Korea patent 24.5%, respectively.