• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.91-96
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• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.71-78
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• 2005

The purpose of this study is to suggest a hyperfine maskless writing technique by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wr\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (etching time, normal load, loading .ate, hold-time at the maximum load) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies. Finally, sample characters were written to show the possibility of the application.

• The Journal of the Korean dental association
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• v.23 no.12 s.199
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• pp.1031-1037
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• 1985

The purpose of this study was to evaluate the marginal sealing ability of 'vivadent.' Using freshly extracted human teeth and 2% aqueous methylene blue, the marginal leakage of dye in restorative materials such as vivadent with acid etching technique, Durafill with acid etching technique, silar with acid etching technique, Adaptic, and Amalgam were investigated at 37℃ and under temperature cycling in range of 4℃-60℃. The results were as follows; 1. All filling materials showed some degree of marginal penetration by 2% methylene blue dye. 2. Vivadent with acid etching technique revealed effective marginal sealing ability, but under temperature cycling it showed increased marginal leakage. 3. All resins showed greater marginal leakage than amalgam restoration. 4. Vivadent had the most effective marginal sealing ability in experimented resins.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.81-87
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• 1994

We used IR laser inteferometric technique for measuring the temperature of wafer during cryogenic ECR etching. Using this technique, the effect of RF bias power and microwave power on the wafer temperature during etching period is investigated. As the RF bias power and microwave power was increased, the temperature of the wafer considerably increased and we concluded that to prevent the increase of substrate temperature during etching period, an adequate wafer cooling is needed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.351-354
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• 2004

This work presents a simple and cost-effective approach for maskless fabrication of positive-tone silicon master for the replica molding of hyperfine elastomeric channel. Positive-tone silicon masters were fabricated by a maskless fabrication technique using the combination of nanoscratch by Nanoindenter ⓡ XP and XOH wet etching. Grooves were machined on a silicon surface coated with native oxide by ductile-regime nanoscratch, and they were etched in a 20 wt％ KOH solution. After the KOH etching process, positive-tone structures resulted because of the etch-mask effect of the amorphous oxide layer generated by nanoscratch. The size and shape of the positive-tone structures were controlled by varying the etching time (5, 15, 18, 20, 25, 30 min) and the normal loads (1, 5 mN) during nanoscratch. Moreover, the effects of the Berkovich tip alignment (0, 45$^{\circ}$) on the deformation behavior and etching characteristic of silicon material were investigated.

• International Journal of Precision Engineering and Manufacturing
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• v.8 no.1
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• pp.73-78
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• 2007

The objective of this work was to simulate lead frame etching characteristics to optimize the etching process, Characteristics such as the etching factor and uniformity were investigated for different actual operating conditions, including pressure, distance from the nozzle tip, pipe pitch, and feed speed. The correlation between the etching and spray characteristics was analyzed to develop the etching model. Spray characteristics obtained from an experiment using a phase Doppler anemometer system were then simulated using a Monte-Carlo technique, The etching process model was coded in the Java language, The spray and etching characteristics were correlated with each other and simulated results agreed well with the measured data for a lead frame etching process, The optimal operating parameters under various conditions were successfully determined.

• Transactions of the Society of Information Storage Systems
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• v.2 no.3
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• pp.196-200
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• 2006

We are developing a phase change etching technology using an inorganic photoresist of GeSbTe film which is the recording material of the phase change disc. A selective etching phenomenon between amorphous and crystalline states can be utilized with an alkaline etchant. Phase-change pits could be formed using this technique, in which the etching selectivity is strongly dependent on the concentration of the etchant. The degree of etching was investigated by the transmittance between crystalline and amorphous films after the wet-etching. The pits patterned on the disc could be observed by AFM after wet-etching.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.242-248
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• 1997

Porous silicons were prepared by dry etching as well as by chemical etching. The latter is a conventional method used by many researchers. Meanwhile, the former is a new method we developed. Also the porous silicon structure was made by E-beam lithography technique. However, due to the limit of this technique, minimum size we could produce was about 0.3 $\mu\textrm{m}$ in diameter on silicon wafer. In a new method, the porous silicon microstructure was fabricated by using Reactive Ion Etching method after covering with diamond powder on 4 inch wafer by using spin coater. In this method, diamond powder acted as a mask. The morphology of samples prepared under many different conditions were analysed be SEM and AFM. And we measured PL spectra for the samples. Based on these results, we observed the structure of a few hundreds $\AA$ in size from porous silicon which was made by dry etching with diamond powder. Also the PL peak for these samples lied around 590 nm compared to 760 nm for chemically etched porous silicon.

• The korean journal of orthodontics
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• v.40 no.2
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• pp.87-94
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• 2010

Objective: Many studies have carried out research on comparisons between laser etching and conventional etching systems to investigate methods of reinforcing shear bond strength. The purposes of this study were to assess the efficiency of bonding with erbium, chromium doped: yttrium-scandium-gallium-garnet (Er,Cr:YSGG) laser etching combined with the conventional etching technique. Methods: Sixty-four sound premolars, extracted for orthodontic purposes, were randomly divided into 4 groups and treated in the following manner. First group, conventional etching of 37% phosphoric acid for 15 seconds (control); second group, 1.5 W laser etching for 10 seconds followed by conventional etching; third group, conventional etching followed by 1.5 W laser etching; fourth group, 1.5 W laser etching for 15 seconds only. We assessed the shear bond strength, the surface characteristics, and the adhesive remnant index scores between all groups. Results: Experimental groups showed higher shear bond strength than the control group. But no statistically significant differences were found between the second and third groups. Adhesive remnant scores were compared with the Kruskal-Wallis test, and no statistically significant differences were found between all groups. Conclusions: To obtain maximum shear bonding strength, a combined technique of Er,Cr:YSGG and 37% phosphoric acid is useful even though it may be inconvenient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.158-162
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• 2001

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.