• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.668-673
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• 1997

A Single-crystalline Mn-Zn Ferrite (110 orientation) was masklessly etched by focused Ar laser irradiation in an H$_3$PO$_4$ solution. The depth of the etched grooves increases with increasing a laser power, decreasing a scan speed, and increasing the H$_3$PO$_4$concentration. The width of the etched grooves increases with a increasing laser power, but was relatively insensitive to the scan speed and H$_3$PO$_4$concentration. High etching rate of up to 714 ${\mu}{\textrm}{m}$/s and an aspect ratio of 6 for vertical slab structure have been obtained by the light-guiding effect of the laser bean in the H$_3$PO$_4$ solution.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.426-431
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• 1998

This paper describes electrochemical etch-stop characteristics in THAH/IPA/pyrazine solution. I-V curves of n- and p-type Si in THAH/IPA/pyrazine solution were obtained. OCP(Open Circuit Potential) and PP (Passivation Potential) of p-type Si were -1.2 V and 0.1 V, and of n-type Si were -1.3 V and -0.2 V, respectively. Both n- and p-type Si, etching rates were abruptly decreased at potentials anodic to the PP. The etch-stop characteristics in THAH/IPA/pyrazine solution were observed. Since accurate etching stop occurs at pn junction, Si diaphragms having thickness of epi-layer were fabricated. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vol.%/pyrazine 0.1g/100ml. thus the elapsed time of etch-stop was reduced.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.259-263
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• 2001

There are several steps such as slicing, lapping, chemical etching and mechanical polishing in the silicon wafer production process. The chemical etching step is necessary to remove damaged layer caused In the slicing and lapping steps. The typical etching liquor is the acid mixture comprising nitric acid, acetic acid and hydrofluoric acid. At present, the waste acid is treated by a neutralization method with a high alkali cost and balky solid residue. A solvent extraction method is applicable to separate and recover each acid. Acetic acid is first separated from the waste liquor using 2-ethlyhexyl alcohols as an extractant. Then, nitric acid is recovered using TBP(Tri-butyl phosphate) as an extractant. Finally hydrofluoric acid is separated with the TBP solvent extraction. The expected recovered acids in this process are 2㏖/l acetic acid, 6㏖/1 nitric acid and 6㏖/l hydrofluoric acid. The yields of this process are almost 100% for acetic acid and nitric acid. On the other hand, it is important to recover and reuse the metal values contained in various industrial wastes in a viewpoint of environmental preservation. Most of industrial products are made through the processes to separate impurities in raw materials, solid and liquid wastes being necessarily discharged as industrial wastes. Chemical methods such as solvent extraction, ion exchange and membrane, and physical methods such as heavy media separation, magnetic separation and electrostatic separation are considered as the methods for separation and recovery of the metal values from the wastes. Some examples of the application of solvent extraction to the treatment of wastes such as Ni-Co alloy scrap, Sm-Co alloy scrap, fly ash and flue dust, and liquid wastes such as plating solution, the rinse solution, etching solution and pickling solution are introduced.

• Journal of the Korean Electrochemical Society
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• v.16 no.1
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• pp.1-8
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• 2013

This review article summarizes metal-assisted chemical etching (MAC etch or MACE), an anisotropic etching method for Si, and describes principles, main factors, and recent achievements in literature. In 1990, it was discovered that, with metal catalyst on surface and $H_2O_2$/HF as etchant, Si substrate can be etched anisotropically, in even in solution. In contrast to high-cost vacuum-based dry etching methods, MAC etch enables to fabricate a variety of high aspect ratio nanostructures through wet etching process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.194-197
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• 2013

We investigated the effect of etching time on the surface roughness, and electrical and optical properties of ZnO and 2 wt% Al-doped ZnO (AZO) films. The ZnO and AZO films were deposited on glass substrates by RF magnetron sputtering technique. The etching experiment was carried out using a solution of 5% HCl at room temperature. The surface roughness was characterized by Atomic Force Microscopy. The electrical property was measured by Hall measurement system and 4-point probe. The optical property was characterized by UV-vis spectroscopy. After the wet chemical etching, the surface textures were obtained on the surface of the ZnO and AZO films. With the increase of etching time, the surface roughness (RMS) of the films increased and the transmittance of the films was observed to decrease. For the AZO film, a low resistivity of $1.0{\times}10^{-3}\;{\Omega}{\cdot}cm$ was achieved even after the etching.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.217-222
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-face n-type GaN were investigated using KOH solutions. It was observed that hexagonal pyramids were formed on the etched surface regardless of etching conditions. However, the size of the hexagonal pyramids was changed as the etching time and temperature increased, respectively. Initially, as the etching time and concentration of KOH solution increased, the hexagonal pyramid was observed to be dissociated into smaller pyramids. However, as the etching time increased further, the size of the hexagonal pyramids increased again, indicating that the etching of N-face n-type GaN by KOH solutions proceeded through the evolution of hexagonal pyramids, such as formation, dissociation and enlargement of pyramids. Furthermore, it was also observed that there is a correlation between the photoluminescence intensity of the etched surface and the value of root-mean-square roughness. The intensity of PL increased as the roughness value increased due to the enhancement of the extraction efficiency of the generated photons.

• Journal of Technologic Dentistry
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• v.43 no.4
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• pp.160-167
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• 2021

Purpose: In this study, when the etching treatment method, which is a chemical surface treatment method, is applied to colored zirconia, the shear bond strength between the veneering ceramic material and colored zirconia is compared with that without surface treatment, and the fracture type is observed to evaluate the etching treatment effect of colored zirconia. Methods: Experiments were conducted after dividing the study sample into two groups, which are the zirconia control group without surface treatment using colored zirconia blocks (without etching zirconia, NZC group) and the zirconia group treated with a commercially available etching solution (etching liquid zirconia, EZC group). Results: The mean shear bond strength of the NZC group was 20.31±2.32 Mpa, and that of the EZC group was 25.95±2.34 Mpa, and the difference between these two values was statistically significant (p<0.05). Further, the surface roughness Ra value was higher in the EZC group than in the NZC group. In the fracture pattern, cohesive fractures were dominant, and adhesive fractures and cohesive fractures were mixed. Conclusion: The bond strength was significantly higher in the group treated with colored zirconia. The fracture pattern was mostly cohesive failure in the group not treated with etching and changed to mixed failure as the etching treatment progressed.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.264-267
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• 2007

It is important to reduce optical losses from front surface reflection to improve the efficiency of crystalline silicon solar cells. Surface texturing by isotropic etching with acid solution based on HF and $HNO_3$ is one of the promising methods that can reduce surface reflectance. Anisotropic texturing with alkali solution is not suitable for multicrystalline silicon wafers because of its various grain orientations. In this paper, we textured multicrystalline silicon wafers by simple wet chemical etching using acid solution to reduce front surface reflectance. After that, surface morphology of textured wafer was observed by Scanning Electron Microscope(SEM) and Atomic Force Microscope(AFM), surface reflectance was measured in wavelength from 400nm to 1000nm. We obtained 29.29% surface reflectance by isotropic texturing with acid solution in wavelength from 400nm to 1000nm for fabrication of multicrystalline silicon solar cells.