• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.65-65
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• 2009

본 연구에서는 ICP 식각장치 및 $Cl_2$/Ar 플라즈마에 의한 $Ba_2Ti_9O_{20}$(BTO) 박막의 식각 특성을 고찰하였다. XPS 분석 장치를 이용하여 식각 표면 반응을 조사하였으며, 공정 변수 ($Cl_2$/Ar 가스 혼합비, 소스파워, 챔버 압력, 바이어스 파워)에 따라 플라즈마 특성 변화를 Langmuir probe measuring system을 이용하여 추출하였다. $Cl_2$/Ar 가스에서 Ar 가스의 혼합비가 증가함에 따라 BTO 박막의 식각 속도는 감소하였으며, $Cl_2$ 가스만을 사용하는 경우, 31.7 nm/min 으로 가장 높은 식각 속도를 보였다. Ar 가스의 혼합비에 따른 BTO박막의 식각속도 변화는 Langmuir probe 특성과 XPS 분석결과로부터 플라즈마 내에 형성되는 Cl radical density와 밀접한 관련이 있는 것으로 판단할 수 있다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1707-1710
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• 2014

This paper is the study for the directional solidification of the ingot through the thermal analysis simulation and structural change of casting furnace. The activation analysis of metal impurities were also detected the total number of 10 different metals, but the concentration distribution showed no significant positional deviations in the same position from the top to the bottom. With the results of thermal analysis simulation, the silicon as a whole has reached the melting temperature as the retention time 80 min. The best cooling conditions showed at the upper cooling temperature $1,400^{\circ}C$ and cooling time 60min. The fabricated wafers showed the superior etching result at the grain boundary than that of existing commercial wafers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.460-464
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• 2003

The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.26-31
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• 2001

This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20 ${\mu}{\textrm}{m}$ thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03 ${\mu}{\textrm}{m}$ and the standard deviation was $\pm$0.26 ${\mu}{\textrm}{m}$. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.867-869
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• 1999

In this study, $SrBi_{2}Ta_{2}O_{9}$(SBT) thin films were etched as a function of $SF_6$/Ar gas mixing ratio in magnetically enhanced inductively coupled plasma(MEICP) system fer a fixed rf power, dc-bias voltage, and chamber pressure. The etch rate of SBT thin film was $1500{\AA}/min$ and the selectivities of photoresist (PR) and $SiO_2$ to SBT thin film were 0.48 and 0.62, respectively when the samples were etched at a rf power of 600W, a dc-bias voltage of -150V, a chamber pressure of 10 mTorr and a gas mixing ratio of $SF_6/(SF_6+A)$=0.1. In order to examine the chemical reactions on the etched surface, X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry(SIMS) were done.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.2 s.179
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• pp.146-153
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• 2006

Acceleration sensors have widely been used in the various fields of industry. In recent years, micromachining accelerometers have been developed and commercialized by the micromachining technique or MEMS technique. Typical structure of such sensors consist of a cantilever beam and a vibrating mass fabricated on Si wafers using etching. This study investigates the feasibility of powder blasting technique for microfabrication of sensor structures made of the pyrex glass alternating the existing Si based acceleration sensor. First, as preliminary experiment, effect of blasting pressure, mass flow rate of abrasive and no. of nozzle scanning on erosion depth of pyrex and soda lime glass is studied. Then the optimal blasting conditions are chosen for pyrex sensor. Structure dimensions of designed glass sensor are 2.9mm and 0.7mm for the cantilever beam length and width and 1.7mm for the side of square mass. Mask material is from aluminium sheet of 0.5mm in thickness. Machining results showed that tolerance errors of basic dimensions of glass sensor ranged from 3um in minimum to 20um in maximum. This results imply the powder blasting can be applied for micromachining of glass acceleration sensors alternating the exiting Si based sensors.

• Analytical Science and Technology
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• v.18 no.4
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• pp.263-270
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• 2005

Nuclear track is an useful tool for elemental analysis of radionuclides, such as uranium, plutonium and thorium, etc., and for elements undergoing nuclear reactions with thermal neutrons such as lithium and boron. This method has various application fields such as detecting fissionable radionuelides, measuring the fission rate in nuclear technology, analyzing cosmic radiation from meteorite, calculating the age of minerals as well as their history, etc. Track registration method has been applied to the microscopic analysis of boron and fissionable element such as uranium in KAERI. This report reviews the theoretical background of the nuclear track formation, practical procedures to obtain etched tracks and a perspective of the future.

• Journal of the Korean institute of surface engineering
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• v.45 no.6
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• pp.242-247
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• 2012

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and $Yb_2O_3$ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature ($200^{\circ}C$) than that of the ITO films ($170^{\circ}C$), which was attributed to both larger ionic radius of $Yb^{3+}$ and higher bond enthalpy of $Yb_2O_3$, compared to ITO. This amorphous ITO:Yb film post-annealed at $170^{\circ}C$ showed a resistivity of $5.52{\times}10^{-4}{\Omega}cm$, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about $170^{\circ}C$). The transmittance of all films was >80% in the visible region.

• Journal of Korea Foundry Society
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• v.15 no.5
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• pp.483-493
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• 1995

The microstructural changes during semi-solid state processing of hypereutectic Al-Si alloy has been investigated in the present study. Stirring of semi-solid slurry results in the morphological changes of the primary Si particles, i.e. from angular rod shape to near-spherical shape. Besides the spherodization of primary Si particles, the average particle size increases, especially, at much higher rate in the final stage than that in the early stage of stirring. Various microstructure characterization techniques, such as anisotropic etching, SEM imaging and ECP analysis, reveal that the spherodization of primary Si particles occurs by the combinations of the mechanisms of coalescence, fracture, and wear of the individual particles. Isothermal shearing of hypereutectic Al-Si at $580^{\circ}C$ shows that spherical ${\alpha}-Al$ particles are formed by the dissociation of Al-Si eutectic structure at the early stage of isothermal shearing. The spherical ${\alpha}-Al$ particles gradually grow by the mechanisms of Ostwald ripening and coalescence of the particles.