• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.5
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• pp.1011-1016
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• 2001

In this paper, a narrow-band bandpass filter using microstrip open-loop resonators with coupled and crossing lines is designed and fabricated. This filter has many advantages such as compact in size, low weight and the characteristic of the elliptic-function narrow-band bandpass filtering. The configuration consists of two identical microstrip open loop resonators, coupled line and crossing line. By using open loop resonators, the size of the filter can be reduced about 50% compared with the ring resonators. A crossing line gives two notchs in the stopband, which have sharp selectivity in the passband. Centered at 2.455GHz, the calculated microstrip bandpass filter shows a bandwidth of 1.22%, which makes it very attractive for application in the wireless LAN. The filter is fabricated by photo-etching process. The fabricated bandpass filter shows that the bandwidth is 0.85% for 2.458GHz and the size is only $2.6cm\times1cm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.276-276
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• 2010

Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.504-504
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• 2011

최근 디지털 프린팅 기술의 핵심기술로 떠오르고 있는 잉크젯 프린팅 기술은 최근 기존의 문서인쇄 뿐 아니라, 직물 인쇄, 태양전지 등의 다양한 반도체 소자 제조에 널리 활용되고 있으며, 점차 그 응용 분야를 넓혀가고 있다. 특히 thermal 방식의 잉크젯 피린팅 기술은 etching, thin film process, lithography등의 반도체 공정 기술을 이용하여 제작할 수 있기 때문에, 현재 잉크젯 프린팅 기술은 대부분 thermal 방식을 체택하고 있다. 이러한 thermal 잉크젯 프린팅 방법에서는 잉크를 토출시키기 위하여, 전기적 에너지를 열에너지로 전환하는 전자저항막층이 필수적으로 필요하게 되는데, 이러한 전자저항막층은 수백도가 넘는 고온 및 잉크와 접촉으로 인한 부식 및 산화 문제가 발생할 수 있는 열악한 환경에서 사용되므로, Ta, SiN과 같은 보호층을 필수적으로 필요로 한다. 그러나 최근 잉크젯 프린터의 고해상도 고속화, 대면적 인쇄성 등과 같은 다양한 요구 증가에 따라, 잉크젯 프린터의 저전력 구동이 이슈로 떠올라 열효율에 방해가 되는 보호층을 제거할 필요성이 제기되고 있다. 지금까지는 Poly-Si, $HfB_2$, TiN, TaAl, TaN _0.8 등의 물질들이 잉크젯 프린터용 전자저항막 물질로 연구되거나 실제로 사용되어져 왔으나, 이러한 물질들을 보호층을 제거하는 경우 쉽게 산화되거나, 부식되는 문제점을 가지고 있다. 따라서, 기존 전자저항막의 기능을 만족시키면서, 산화나 부식에 대한 강한 내성을 가져 보호층을 제거하더라도 안정적으로 구동이 가능한 하이브리드 기능성(히터 + 보호층)을 가지는 잉크젯 프린터용 전자저항막 물질의 개발이 시급한 실정이다. 본 연구에서는 자기조립특성을 가져 정밀제어가 가능한 원자층증착법(Atomic Layer Deposition)을 이용하여 원자/나노 단위의 미세 구조 컨트롤을 통해 내열 내산화 내부식성 저온도저항계수를 동시에 가지는 다기능성 전자저항막을 설계 및 개발하고자 하였다. 전자저항막 개발을 위하여 우수한 내부식 내산화성을 가지고 결정립 크기에 따른 온도저항계수 조절이 가능한 platinum group metal들과 전기 저항 및 내열성 향상을 위한 물질의 복합구조막을 원자증증착법으로 증착하였다. 또한, 전자저항막 증착시 미세구조와 공정 변수가 내부식성, 내산화성, 그리고 온도저항계수에 미치는 영향을 체계적으로 연구하여, proto-type의 inkjet printhead를 구현하였다.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.3
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• pp.105-124
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• 2011

TFT-LCD consists of LCD panel on the top, circuit unit on the side and BLU on the bottom. The recent development issues of BLU-dependent TFT-LCD have been power consumption minimization, slimmerization and size maximization. As a result of this trend, LED is adopted as BLU instead of CCFL to increase brightness and to reduce thickness. In liquid crystal displays, the light efficiency is below 10% due to the loss of light in the path from a light source to an LCD panel and presence of absorptive polarizer. This low efficiency results in low brightness and high power consumption. One way to circumvent this situation is to use a reflective polarizer between backlight units and LCD panels. Since a nano-wire grid polarizer has been known as a reflective polarizer, an idea was proposed that it can be used for the enhancement of the brightness of LCD. The use of reflective polarizing film is increasing as edge type LED TV and 3D TV markets are growing. This study has been carried out to fabrication of the nano-wire grid polarizer(NWGP) and investigated the brightness enhancement of LCD through polarization recycling by placing a NWGP between an c and a backlight unit. NWGPs with a pitch of 200nm were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the UV imprinting and was applied to plastic PET film. In this case, the brightness of an LCD with NWGPs was 1.21 times higher than that without NWGPs due to polarization recycling.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.9-14
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• 2000

Dielectric characteristics of P(VDF/TrFE) film manufactured using spin coating technique have been investigated. To improve the crystallinity and quality of film, the film was three step annealed. Simple etching process and conditions for P(VDF/TrFE) film were established using top electrode as a mask. Poling is performed by several steps. $1.87\;{\mu}m$ thick P(VDF/TrFE) films were obtained with conditions such that the solution of 10 wt% concentration was spun at 3000rpm for 30 seconds. Before poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 13.5 and 0.042, respectively. After poling, dielectric constant and dielectric loss of P(VDF/TrFE) film were 11.5 and 0.037, respectively.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.334-340
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• 2000

This paper presents the fabrication of a micro electromagnetic flow sensor for the liquid flow rate measurement. The micro electromagnetic flow sensor has some advantages such as a simple structure, no heat generation, a rapid response and no pressure loss. The principle of the micro electromagnetic flow sensor is based on Faraday's law. If conductive fluid passes through a magnetic field, the electromotive force is generated and detected by two electrodes on the wall of the flow channel. The flow sensor consists of two permanent magnets and a silicon flow channel with two electrodes. The dimension of the flow sensor is $9\;mm\;{\times}\;9\;mm\;{\times}\;1\;mm$. The micro flow channel is mainly fabricated by anisotropic etching of two silicon wafers, and the detection electrodes are fabricated by metal evaporation process. The characteristic of the fabricated flow sensor is obtained experimentally. When the flow rates of water with the conductance of $100-200\;{\mu}S/cm$ are 9.1 ml/min and 62 ml/min, the generated electromotive forces are $261\;{\mu}V$ and 7.3 mV, respectively.