• The Journal of Korean Academy of Prosthodontics
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• v.38 no.2
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• pp.178-190
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• 2000

The purpose of this study was to evaluate the surface roughness of Ni-Cr-Be alloy($Verabond^{(R)}$, Aalba Dent Inc., USA) according to electrolyte concentration and etching time. Total of 150 metal specimens ($12{\times}10{\times}1.5mm$) composed of 5 polisded specimens, 5 sandblasted specimens, 140 etched specimens were prepared. Etched groups were divided into 28 groups by the $HClO_4$ concentrations(10, 30, 50, 70%) and etching times(15, 30, 60, 120, 180, 240, 300 seconds). The mean surface roughness(Ra) and the etching depth were measured with Optical 3-dimensional surface roughness measuring machine(Accura 1500M, Intek Engineering Co., Korea) and observed under SEM. The results obtaind were as follows: 1. Surface roughness(Ra) and etching depth were affected by the order of etching time, electrolyte concentration, and their interaction(P<0.05). 2. Surface roughness(Ra) and etching depth were increased with etching time in 10%, 30% electrolyte concentrations, but they had no significant difference with etching time in 70% (P<0.05). 3. Surface roughness(Ra) and etching depth decreased in the order of 30, 10, 50, 70% electrolyte concentrations from 120 seconds etching time(P<0.05). 4. The remarkable morphologic changes in etched surface were observed along the grain boundaries in 15, 30 seconds of 10%, 30% concentrations and the morphologic changes could be denoted in the grains themselves as well as along the boundaries with the lapse of time. Even though the noticeable morphologic changes also took place in etched surface with 50% concentration, the degree of changes were less than that of changes with 10%, 30%. However, there were little morphologic changes with 70% concentration regardless of etching time. 5. Surface roughness(Ra) of sandblasting group with $50{\mu}m\;Al_2O_3$ had no significant difference with 30%-30 seconds etched group(P<0.05).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.747-751
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• 2010

In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

• Restorative Dentistry and Endodontics
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• v.20 no.1
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• pp.1-16
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• 1995

The purpose of this study was to investigate the effect of dentin bonding agents on the bond strength of composite resin restorations in case of applying the dentin bonding agents to acid etched enamel surfaces. Freshly extracted 364 bovine anterior teeth were selected as a adherents. 320 enamel specimens were divided into two groups(unetched group (1) and etched group (2) for testing the shear bond strength, 40 specimens were used for the hardness testing, and 4 specimens of rest were to observe the resin-tag formation into etched enamel surfaces. All surfaces of enamel specimens were polished with 320~1500 SiC paper under continuous running water. In Group (1), 100 enamel specimens were polished and unetched. 220 polished enamel specimens in Group (2) were etched with 37 % phosphoric acid solution for 60 seconds, washed with water for 20 seconds, and dried with a light air pressure for 60 seconds. Three kinds of dentin bonding agents(Gluma, Prisma, Scotchbond 2) were evaluated the effect on the bond strength to conditioned enamel surfaces. Shear bond strengths were measured on the three cases such as a coating of primer only, a coating of sealer only, and a sequential coating of primer and sealer to acid etched enamel surfaces were compared with the bond strengths measured by the coating of enamel bonding agent followed by the bonding of composite resin (Photo clearfil bright, Kuraray, Japan) to unetched and acid etched enamel surfaces. In addition, the hardness tested on the adhesive fractured surface between composite resin enamel as a mean of evaluation of a factor whether the mechanical bond strengths were affected and the penetration of dentin bonding agents into etched enamel surfaces was also observed. Bond strengths were measured using the method of shear bond strength by a universal testing machine (Instron-4467, USA), statistical test were applied to the results using a one way analysis variance(ANOVA), and hardness was measured by the Vicker's Hardness Tester(MHT-i, Matsuzawa, Japan) and the penetration of the resins were observed by the SEM (Hitachi, S-2300, Japan). The following conclusions were drawn; 1. Enamel bonding agent showed to affect the improvement of bond strength of composite resin to enamel surface both unetched and etched. 2. Dentin bonding agents could be resulted in increase of bond strength to unetched enamel surface, but there were no statistical significances. 3. Bond strengths to etched enamel surface were significantly decreased with a coating of dentin primer only. 4. Coating of sealer only and coating of primer and sealer noticed the similar bond strengths of composite resin to etched enamel using the enamel bonding agents. 5. The applying method proved to be more effective than the kinds of dentin bonding agents on the bond strength of composite resin to etched enamel than the kind of dentin. 6. Vicker's hardness numbers of dentin bonding agents were lower than that of composite resin, but the degree of penetration of dentin bonding agents into etched enamel surfaces was excellent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.654-658
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• 2009

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• The korean journal of orthodontics
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• v.46 no.6
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• pp.386-394
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• 2016

Objective: The objective of the study was to evaluate the practicality and the validity of different surface treatments of self-drilling orthodontic mini-implants (OMIs) by comparing bone cutting capacity and osseointegration. Methods: Self-drilling OMIs were surface-treated in three ways: Acid etched (Etched), resorbable blasting media (RBM), partially resorbabla balsting media (Hybrid). We compared the bone cutting capacity by measuring insertion depths into artificial bone (polyurethane foam). To compare osseointegration, OMIs were placed in the tibia of 25 rabbits and the removal torque value was measured at 1, 2, 4, and 8 weeks after placement. The specimens were analyzed by optical microscopy, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). Results: The bone cutting capacity of the etched and hybrid group was lower than the machined (control) group, and was most inhibited in the RBM group (p < 0.05). At 4 weeks, the removal torque in the machined group was significantly decreased (p < 0.05), but was increased in the etched group (p < 0.05). In the hybrid group, the removal torque significantly increased at 2 weeks, and was the highest among all measured values at 8 weeks (p < 0.05). The infiltration of bone-like tissue surface was evaluated by SEM, and calcium and phosphorus were detected via EDS only in the hybrid group. Conclusions: Partial RBM surface treatment (hybrid type in this study) produced the most stable self-drilling OMIs, without a corresponding reduction in bone cutting capacity.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.482-496
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• 1993

Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

• Journal of the Korean Electrochemical Society
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• v.13 no.3
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• pp.157-162
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• 2010

The electrodes comprising nano-sized $LiFePO_4$, carbon black and binder are prepared with two different Al current collectors. One is the generally used normal Al foil and the other is the chemically etched Al foil. Surface characteristics of each Al foil and electrochemical performance of the cathodes using each foil are investigated. The electrode from the etched Al foil exhibits better physical and electrochemical properties as compared to those of the normal Al foil because the etched Al foil has rough surface with sub-micron pores which improve the adhesion between the electrode materials and the substrate. The electrode on the etched Al foil has such a strong peel strength that the impedance is smaller than that of normal one. Indeed the $LiFePO_4$ electrode from the etched Al foil exhibits a better rate capability and remains intact even after storage for 1 week at the charged state at the elevated temperature $60^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.225-234
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• 1993

Titanium nitride coatings were deposited onto SUS304 stainless steel substrates pretreated by mechanical scrubbing, chemical etching at 50% HCl solution and Ar ion etching. Adhesion strength were measured by scratch tester and confirmed by SEM with EDS. Adhesion strength of Ar ion etched substrate was 10 to 15 times higher than that of mechanical scrubbed or chemical etched substrate. Ar ion etching brought about an uniform and fine spherical shaped surface, while chemical etching gave rise to a rough and irregular surface on SEM micrograph. It was suggested that higher adhesion strength might be caused by anchoring effect of Ar ion etched surface prior to TiN deposition.

• The Journal of Korean Academy of Prosthodontics
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• v.32 no.1
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• pp.23-36
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• 1994

Most investigators recommended that porcelain surface should be roughened with abrasives and/or be etched with acid in repairing the fractured porcelain with composite resin. This study was designed to evaluate the effect of porcelain surface treatments on the bond strength between porcelain and composite resin by measuring the shear bond strength and observing the porcelain surface with SEM. 48 porcelain disc were fabricated with Vintage porcelain and embedded in epoxy resin with the test surface exposed. The specimens were divided four groups at random and the test surfaces of the four groups were prepared as follows : Group 1 : Porcelain surface was roughened with a fine diamond and treated with 32% phosphoric acid gel for 10 seconds. Group 2 : Porcelain surface was roughened with a fine diamond and etched with 8% hydrofluoric acid gel for 5 minutes. Group 3 : Porcelain surface was roughened with a coarse diamond and treated with 32% phosphoric acid gel for 10 seconds. Group 4 : Porcelain surface was roughened with a coarse diamond and etched with 8% hydrofluoric acid gel for 5 minutes. All specimens were washed for 30 seconds. A representative specimen of each group was selected and the porcelain surface was observed with SEM at 1000 magnification. Remaining specimens were silanated, bonded with composite resin, thermocycled, and shear-tested on specially designed zig connected to Instron machine. The results were as follows : 1. The shear bond strength of the group etched with hydrofluoric acid was significantly higher than that of group treated with phosphoric acid(p<0.01). 2. The shear bond strength of the group roughened with a fine diamond was not significantly different from that of the group roughened with a coarse diamond(p>0.01). 3. SEM examination of prepared porcelain surfaces revealed that the surface etched with hydrofluoric acid showed numerous microporosities, undercut, and rougher surface than the surface treated with phosphoric acid. 4. All specimens etched with hydrofluoric acid showed cohesive failure within porcelain, but specimens treated with phosphoric acid mainly showed adhesive failure between porcelain and composite resin.