• Title/Summary/Keyword: etched pit

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Effects of N$H_3$ on the Induced Defect in Si Oxidation (N$H_3$가 Si산화의 열유기 결함에 미치는 영향)

  • Kim, Yeong-Jo;Kim, Cheol-Ju
    • Korean Journal of Materials Research
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    • v.3 no.4
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    • pp.403-409
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    • 1993
  • In this paper, an $NH_3$, added during dry oxidation and annealing m Si( 111) is clarified effect ive to suppress or remove defects. Annealing effects in $N_2$ and $NH_3/N_2$ ambient are estimated with dry $O_2$ and $NH_4$ oxidation($NH_3$ added in dry $O_2$ oxidation) method. C;em'rated defects in dry $O_2$ oxidation are lengthened according to oxidation time. but any defects in $NH_3$ oxidation are not found. Dry oxidation, after $NH_3$ oxidation as an initial oxidation. lias the defect -removing effect at the interface of Si -$SiO_2$. After dry or $NH_3$. oxidation. the annealmg 7.5% $NH_3/N_2$ ambient brings out gettering effect of OSF. The annealing in 7.5% $NH_3/N_2$ ambient for NI L oxidation method decreaSE,s $NH_3$ length of OSF about 20 % compared with dry oxidation method. Tlw feature of OSF is pit type, the gettering is directed to (011) plane for (111) plane. and OSFs are etched following to 110) directIon.

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Effects of Separator Carbonization on the Characteristics of Aluminium Polymer Condenser (알루미늄 고분자 콘덴서의 특성에 대한 절연지 탄화의 영향)

  • Kim, Jae Kun;Yu, Hyung Jin;Hong, Yoong He;Park, Mi Jin;Park, Seung Youl
    • Applied Chemistry for Engineering
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    • v.17 no.5
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    • pp.539-546
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    • 2006
  • A study on the polymerization of polyethylenedioxythiophene (PEDOT) and the carbonization process of a separator was carred out in order to apply conductive polymer PEDOT to the winding typed aluminum condenser as a solid electrolyte and a negative electrode. PEDOT was polymerized with ethylenedioxythiophene (EDOT) as a monomer and ferric-p-toluenesulfonate as an oxidizing agent. The separator of condenser element was carbonized to control its fibrous tissue for the purpose of making it easy to impregnate the PEDOT solution into the microporous etched pit of aluminum foil by preventing separator from concentrating the PEDOT solution on itself. The characteristics of condenser such as capacitance, dissipation factor, equivalent series resistance, and thermal resistance depended on a carbonization temperature and a carbonization time. It was found that a thickness and a density of the used separator were major parameters of carbonization process and the characteristics of condenser were affected by these parameters.

Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique (화학적 습식 에칭을 통한 AlN와 GaN의 결함 및 표면 특성 분석)

  • Hong, Yoon Pyo;Park, Jae Hwa;Park, Cheol Woo;Kim, Hyun Mi;Oh, Dong Keun;Choi, Bong Geun;Lee, Seong Kuk;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.5
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    • pp.196-201
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    • 2014
  • We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

THE EFFECTS OF DRYING AGENTS AND BONDING AGENTS ON THE SHEAR BOND STRENGTH OF SEALANTS TO ENAMEL (치면건조제와 접착제의 사용에 따른 치면열구전색재의 전단결합강도에 관한 연구)

  • Lim, Hyun-Hwa;Jang, Ki-Taek;Kim, Chong-Chul;Hahn, Se-Hyun
    • Journal of the korean academy of Pediatric Dentistry
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    • v.30 no.2
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    • pp.196-203
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    • 2003
  • The application of sealants is a highly technique-sensitive procedure, requiring an extremely dry field prior to placement. Moisture contamination of the etched enamel surface before sealant placement is cited as the main reason for sealant failure. The purpose of this study was to evaluate the effects of different methods of sealant application on the shear bond strength of sealants to enamel. In groups 1, 2, 3, 4 Teethmate(unfilled sealant) was used, while Ultraseal XTplus(filled sealant) was used in groups 5, 6, 7, 8. Groups 1 and 5(control) were acid etched for 15 seconds using 35% phosphoric acid, washed and then dried. In groups 2, 6 drying agents were applied, and in groups 3, 7 bonding agents were applied and light cured. In groups 4 and 8 both drying agent and bonding agent were applied. Then sealant was cured to the specimen using molds 3mm in diameter and 2mm in height. Thermocycling was performed and shear bond strength was finally measured. The following results were obtained : 1. Groups using filled sealant(groups 5, 6, 7, 8) showed higher shear bond strengths compared to groups using unfilled sealant(groups 1, 2, 3, 4). 2. Among groups using unfilled sealant(groups 1, 2, 3, 4), groups 2, 3, 4 showed significantly higher shear bond strength compared to group 1(p<0.05). There were no significant differences among groups 2, 3 and 4. 3. There were no significant differences(p>0.05) among groups using filled sealant(groups 5, 6, 7, 8). 4. When modes of fracture were examined, cohesive failure was observed in groups 2, 3 and 4.

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