• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.113-116
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• 2008

As the integration in semiconductor display develops, semiconductor process becomes multilayer. In order to form several layer patterns, etching process which uses photoresistor (PR) must be performed in multilayer process. Repeated etching processes which take long time and PR residue cause mortal problems in semiconductor. To overcome such problems, we studied about the solution which eliminates PR effectively by using normal dry and wet etching method using plasma activated PR strip solvent in liquid condition. At first, we simulate the device which activates the plasma and make sure whether gas flow in device is uniform or not. Under activated plasma, etching effect is elevated. This improvement reduces etching time as well as display production time of semiconductor process. Generally, increasing etching process increases environmental hazards. Reducing etching process can save the etchant and protect environment as well.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.63-69
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• 1999

The characteristic parameters of high density plasma source (Helical Resonator) have been measured with Langmuir probe to get the plasma density electron temperature, ion current density, etc. Optical emission spectra of Si and SiCl have been analyzed in $Cl_2$$/poly-Si system to elucidate etching mechanism. In this system, the main reaction to remove silicon atoms on the surface is proceeding mostly through chemical reaction, not pure physical reaction. The emission intensity of SiCl (chemical etching product) increases much faster than Si (pure physical etching product) with increasing the concentration of impurities (P). This is due to the electron transfer from substrate to the surface via Si-Cl bond. As a result, Si-Cl bond becomes more ionic and mobile, therefore the Cl-containing etchant forms $SiCl_x$ with surface more easily. Consequently, for the removal of Si atom from poly silicon surface, the chemical etching is more favorable than physical etching with increasing P concentrations.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.183-190
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• 2002

Photoluminescence(PL) properties of $Si^+$-implanted $SiO_2$ film, which was thermally grown on c-Si substrate, is reported. We have compared room temperature photoluminescence (PL) spectra of the samples which was made in several kinds of implantation, subsequent annealing and $SiO_2$ film thickness. XRD data was correlated with the PL spectra. Silicon nanocrystals in $SiO_2$ film is considered as the origin of the photoluminescence. PL spectra was investigated after wet etching of the $SiO_2$ film by using BOE (Buffered Oxide Etchant) at every one minute. PL peak wavelength was varied as the etching is proceeded. These results indicate that the quantity and the distribution of dominant size of Si nanocrystals in $SiO_2$ film seem to have a direct effect on PL spectrum.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.37-40
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• 2003

We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

• Journal of Powder Materials
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• v.25 no.5
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• pp.379-383
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• 2018

Silica is used in shell materials to minimize oxidation and aggregation of nanoparticles. Particularly, porous silica has gained attention because of its performance in adsorption, catalysis, and medical applications. In this study, to investigate the effect of the density of the silica coating layer on the color of the pigment, we arbitrarily change the structure of a silica layer using an etchant. We use NaOH or $NH_4OH$ to etch the silica coating layer. First, we synthesize ${\alpha}-FeOOH$ for a length of 400 nm and coat it with TEOS to fabricate particles with a 50 nm coating layer. The coating thickness is then adjusted to 30-40 nm by etching the silica layer for 5 h. Four different shapes of ${\alpha}-FeOOH$ with different colors are measured using UV-vis light. From the color changes of the four different shapes of ${\alpha}-FeOOH$ features during coating or etching, the $L^*$ value is observed to increase and brighten the overall color, and the $b^*$ value increases to impart a clear yellow color to the pigment. The brightest yellow color was that coated with silica; if the sample is etched with NaOH or $NH_4OH$, the $b^*$ value can be controlled to study the yellow colors.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.423-428
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• 2013

Porous YSZ ceramics are fabricated using 3 mol% yittria-stabilized zirconia (3YSZ) and NiO with different particlesizes (0.6 and 7 ${\mu}m$). Nickel oxide (NiO) is added to the YSZ powder as a pore former with different amounts(40, 50, and 60 vol%) and at different sintering temperatures (1350 and $1400^{\circ}C$) are applied in order to evaluate the temperature effects on the pore and mechanical properties. Heat treatment is conducted after sintering at $700^{\circ}C$ in $H_2$ for the NiO reduction process; then, Ni is removed using a $HNO_3$ etchant solution. According to the NiO contentand sintering temperatures, 41-67% porous YSZ ceramic is obtained and the flexural strength increases, while the porosity decreases with an increasing sintering temperature. The optimum flexural strength ($136.5{\pm}13.4MPa$) and porosity (47%) for oxygen transport porous YSZ membrane can be obtained with 40 vol% of 7 ${\mu}m$ NiO particle at a sintering temperature of $1350^{\circ}C$.

• Journal of Korean Dental Science
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• v.4 no.2
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• pp.39-45
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• 2011

Purpose: The goal of this research is to find the role of collagen membrane, which can reduce physical damage, as a scaffold for possible alternative to the corticotomy which causes Regional Acceleratory Phenomenon (RAP). Materials and Methods: The experiments were carried out on 12 New Zealand white rabbits, approximately 3.5 kg in bodyweight. We made an incision on the skin of the mandibular border and applied 37% phosphoric acid and collagen membrane to the mandibular bone surface of the first group (experimental group), and only phosphoric acid to the second group (control group). After 3 days, 1 week, and 2 weeks, 4 rabbits each were sacrificed and specimens were obtained. Each specimen was stained by H&E and Tartrate-resistant acid phosphatase (TRAP), and histological changes were observed by light microscope. Results: The demineralization of the experimental group was weak compared to the control group. It also showed a gradual increase of demineralization (after 3 days, 1 week, and 2 weeks) and the control group showed more extensive demineralization than the experimental group. Conclusion: This study demonstrates the amount of demineralization as a result of using phosphoric acid, and as time went by, demineralization increased. The absorbable collagen membrane was used as a scaffold to increase bone demineralization effect and prevent dispersion to adjacent tissues, but rather the amount of bone demineralization decreased. Therefore, the role of collagen membrane as a scaffold for RAP was weak.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.390-396
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• 1998

Neutral stream was generated from Helicon plasma source and was applied to etch silicon for the purpose of preventing physical and electrical damages from the bombardment of charged particles with high translation energy. By installing a permanent magnet and applying positive bias beneath the substrate, the cusp-magnetic and electric fiddles were generated in order to remove the charged particles from the downstream plasma. As a result, the electron density and ion density in the vicinity of the substrate were reduced by 1/1000 and 1/10, respectively. The directional etching of silicon was observed and the etch rate was found to be very low to below 100 $\AA$/min at a pressure of $8.5{\times}10^{-4}$ Torr, when $Cl_2$ and 10% $SF_{sigma}$ etchant gases were used.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.61-65
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• 2009

We produced noble surface structure of crystalline Si for solar cells by using preferential aqueous etching on crystallographic defects which were induced by grinding process. We analyzed the reflectance of textured surface according to surface topography resulting from various etchant concentrations and duration of etching process. The crystallographic defects and textured surface topography were investigated by using transmission electron microscopy and secondary electron microscopy, respectively. Also, the measurement of reflectance of textured surface utilizes spectrophotometer. The optimized texture surface exhibits improved result indicating reflectance of below ave. 1%. And it is cost-effective as well as taking short time within a few minutes.

• Journal of Energy Engineering
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• v.23 no.2
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• pp.217-222
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• 2014

In order to improve the heat efficiency of the general residential boiler, we performed an experiment of condensation heat transfer to air pre-heating exchanger adhered to the condensing boiler. In this study, surface roughness was imposed on the surface of stainless steel by etching. And in order to evaluate the heat transfer performance on each plate, the counter flow heat exchanger fabricated with polycarbonate in used. As a result, on etching treated plate's overall heat transfer coefficient is higher than the original plate. And etching treated plate during 60 seconds with etchant is the to average 15% compared to bare stainless steel. And we studied the heat transfer enhancement factor through the analysis of surface characteristics using AFM.