• 전자공학회논문지A
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• 제29A권1호
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• pp.33-40
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• 1992

4인치(100) 실리콘 기판상에 센서용 다이아프램을 제조할 때 생기는 식각 현상들을 관찰하고 분석하였다. 115$^{\circ}C$의 "F etch' 용액을 사용하여 300$\mu$ 이상의 깊은 식각을 행하였을 때 식각 표면에 발생하느 식각 결함은 hillock, 반응 생성물, 그리고 횐색 잔유물로 구분될 수 있었따. 특히 hillock의 경우 식각 표면에 부착된 반응 생성물의 밀도나 크기에 관계하여 |111|면들로 이루어질는 피라밋 구조나 사다리꼴 육면체등의 형태를 취함이 확인되었다. 또한 용해된 실리콘의 국부적인 과잉 포활 발생하는 흰색 잔유물의 IR 흡수 스펙트럼을 조사한 결과, Si-N-O 성분에 미량의 h와 C가 포함된 것임을 알 수 있었다. 아울러 식각면을 식각용액에 대해 아래쪽, 위쪽, 그리고 측면을 향하도록 놓았을때 식각 결함의 존재 확률과 분포 그리고 식각율의 분포를 비교한 결과 식각율의 균일성면에서는 하측방향의 자세가, 식각결함의 제거에 있어서는 측면방향의 자세가, 식각결함의 제거에 있어서는 측면방향의 자세가 유리하게 나타났으며 이를 반응조내의 흐름 패턴을 이용하여 해석하였다.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.188-195
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• 1996

The AlSi etching process using the MERIE type reactor carried out with different process parameters such as C1$_{2}$ and N$_{2}$ gas flow rate, RF power and chamber pressure. The etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. As the N2 gas flow rate is increased, the AlSi etch rate is decreased and uniformity has remained constant within .+-.5%. The etch rate is increased and uniformity is decreased, according to increment of the C1$_{2}$ gas flow rate, RF power and chamber pressure. Selective etching of TEOS with respect to AlSi is decreased as the RF power is increased while it is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, on the other hand, selective etching of photoresist with respect to AlSi is increased by increment of the C1$_{2}$ gas flow rate and chamber pressure, it is decreased as the N$_{2}$ gas flow rate is increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.723-725
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• 1998

STI CMP process are substituting gradually for LOCOS(Local Oxidation of Silicon) process to be available below sub-0.5um technology and to get planarized. The other hand, STI CMP process(especially STI CMP with RIE etch back process) has some kinds of defect like Nitride residue, Torn Oxide defect, etc. In this paper, we studied how to reduce Torn Oxide defects after STI CMP with RIE etch back process. Although Torn Oxide defects which occur on Oxide on Trench area is not deep and not sever, Torn oxide defects on Moat area is sometimes very deep and makes the yield loss. We did test on pattern wafers witch go through Trench process, APCVD process, and RIE etch back process by using an REC 472 polisher, IC1000/SUV A4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the root causes of torn oxide defects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 한국재료학회지
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• 제3권5호
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• pp.482-496
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• 1993

Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• 청정기술
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• 제18권3호
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• pp.280-286
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• 2012

초임계 이산화탄소를 이용하여 희생 $SiO_2$층에 대한 건식 식각 실험을 진행하였다. HF/pyridine (HF/py) 식각액과 알콜 첨가제를 사용하여 이중 챔버 시스템 방식으로 boron phosphor silica glass (BPSG), tetraethyl orthosilicate (TEOS), thermal $SiO_2$와 Si-nitride (SiN)의 박막 층에 대한 식각 성능을 조사하였다. 메탄올의 첨가에 의하여 실리카 희생막에 대한 HF/py의 식각률이 높아지는 것을 확인할 수 있었다. BPSG를 제외하고는 메탄올이 가장 높은 식각률을 보여줬지만, BPSG의 SiN에 대한 식각 선택비는 이소프로판올이 가장 높았다. HF/py/MeOH 계의 건식 식각반응에서 반응 온도에 따라서 박막별 식각률이 증가하였다. 특히 반응 온도 증가에 따라 BPSG의 식각 속도의 증가폭이 매우 높게 나타났다. HF/py에 알콜 공용매를 첨가하여도 식각 부산물 감소에는 크게 효과가 없었다. HF/$H_2O$의 식각률이 HF/py/alcohol 보다 높게 나타났지만 HF/$H_2O$에 알콜 공용매를 첨가하였을 때는 오히려 식각률이 감소되었다. 캔틸레버 빔 구조를 초임계 이산화탄소 건식 식각으로 제조하여 높은 종횡비의 패턴구조물을 손상 없이 성공적으로 식각할 수 있었다.

• Corrosion Science and Technology
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• 제6권6호
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• pp.304-307
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• 2007

As to the reflection electrode of LCD (liquid crystal displays), silver-copper-gold alloy (hereafter, it is called as ACA (Ag98%, Cu1%, Au1%)) is an effective material of which weathering resistance can be improved more compared with pure silver. However, there is a problem that gold remains on the substrate as residues when ACA is etched in cerium ammonium nitrate solution or phosphoric acid. Gold can not be etched in these etchants as readily as the other two alloying elements. Gold residue has actually been removed physically by brushing etc. This procedure causes damage to the display elements. Another etchant of iodine/potassium iodide generally known as one of the gold etchants can not give precise etch pattern because of remarkable difference in etching rates among silver, copper and gold. The purpose of this research is to obtain a practical etchant for ACA alloy. The results are as follows. The cyanogen complex salt of gold generates when cyanide is used as the etchant, in which gold dissolves considerably. Oxygen reduction is important as the cathodic reaction in the dissolution of gold. A new etchant of sodium cyanide / potassium ferricyanide whose cathodic reduction is stronger than oxygen, can give precise etch patterns in ACA alloy swiftly at room temperature.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.351-355
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• 2001

Via for achieving reliable fabrication of MCM(Multichip Module) substrate was formed on photosensitive BCB layer. The MCM substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in the photosensitive BCB layer, the process of forming the BCB layer and its via forming plasma etch using C$_2$F$\_$6//O$_2$ gas were evaluated. The thickness of the BCB layer after hard bake was shrunk down to 40% of the original. The resolution of vias formed on the BCB was 15㎛ and the slope after develop was 85 degree. AES analysis was done on two vias, one is etched in C$_2$F$\_$6/O$_2$ gas and the other isnot etched. On the via etched in C$_2$F$\_$6//O$_2$, native C was detected and the amount of native C was reduced after Ar sputter. On the via not etched in C$_2$F$\_$6//O$_2$, organic C was detected. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable vias.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.99-102
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• 2000

Via for achieving reliable fabrication of MCM-D substrate was formed on the photosensitive BCB layer. MCM-D substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in photosensitive BCB layer, the process of BCB and plasme etch using $C_2$F$_{6}$ gas were evaluated. The thickness of BCB after soft bake was shrunk down to 60% of the original. AES analysis was done on two vias, one is etched in $C_2$F$_{6}$ gas and the other is non etched. On via etched in $C_2$F$_{6}$, native C was detected and the amount of native C was reduced after Ar sputter. On via non etched in $C_2$F$_{6}$, organic C was detected and amount of organic C was reduced a little after Ar sputter. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable via.ble via.